DATA SHEET
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6-Pin DIP General Purpose
Photodarlington Optocoupler
PDIP6
CASE 646BX
6
4N29M, 4N30M, 4N32M,
4N33M, H11B1M, TIL113M
1
Description
1
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M
have a gallium arsenide infrared emitter optically coupled to a silicon
planar photodarlington.
Features
♦
1
UL1577, 4,170 VACRMS for 1 Minute
DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
CASE 646BZ
MARKING DIAGRAM
ON
Applications
•
•
•
•
•
CASE 646BY
PDIP6
T SUFFIX
6
• High Sensitivity to Low Input Drive Current
• Meets or Exceeds All JEDEC Registered Specifications
• Safety and Regulatory Approvals:
♦
PDIP6
S SUFFIX
6
Low Power Logic Circuits
Telecommunications Equipment
Portable Electronics
Solid State Relays
Interfacing Coupling Systems of Different Potentials and Impedances
XXXXX
VXYYQ
ON
= Logo
XXXXX = Specific Device Code
V
= DIN EN/IEC60747−5−5 Option (only
appears on component ordered with
this option)
X
= One−Digit Year Code
YY
= Digit Work Week
Q
= Assembly Package Code
SCHEMATIC
ANODE 1
CATHODE 2
N/C 3
6 BASE
5 COLLECTOR
4 EMITTER
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2007
April, 2022 − Rev. 2
1
Publication Order Number:
H11B1M/D
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation”
only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Characteristics
Parameter
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
< 150 VRMS
I–IV
< 300 VRMS
I–IV
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
175
Value
Unit
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test
with tm = 10 s, Partial Discharge < 5 pC
1360
Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1594
Vpeak
VIORM
Maximum Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over−Voltage
VPR
Parameter
6000
Vpeak
External Creepage
≥7
mm
External Clearance
≥7
mm
External Clearance (for Option TV, 0.4” Lead Spacing)
≥10
mm
DTI
Distance Through Insulation (Insulation Thickness)
≥0.5
mm
TS
Case Temperature (Note 1)
175
°C
IS,INPUT
Input Current (Note 1)
350
mA
PS,OUTPUT
Output Power (Note 1)
800
mW
Insulation Resistance at TS, VIO = 500 V (Note 1)
>109
W
RIO
1. Safety limit values – maximum values allowed in the event of a failure.
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2
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
TOTAL DEVICE
TSTG
Storage Temperature
−40 to +125
°C
TOPR
Operating Temperature
−40 to +100
°C
Junction Temperature
−40 to +125
°C
260 for 10 seconds
°C
TJ
TSOL
PD
Lead Solder Temperature
Total Device Power Dissipation @ TA = 25°C
270
mW
Derate Above 25°C
3.3
mW/°C
IF
Continuous Forward Current
80
mA
VR
Reverse Voltage
3
V
Forward Current – Peak (300 ms, 2% Duty Cycle)
3.0
A
LED Power Dissipation @ TA = 25°C
120
mW
Derate Above 25°C
2.0
mW/°C
BVCEO
Collector−Emitter Breakdown Voltage
30
V
BVCBO
Collector−Base Breakdown Voltage
30
V
BVECO
Emitter−Collector Breakdown Voltage
5
V
EMITTER
IF(pk)
PD
DETECTOR
PD
IC
Detector Power Dissipation @ TA = 25°C
150
mW
Derate Above 25°C
2.0
mW/°C
Continuous Collector Current
150
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS − INDIVIDUAL COMPONENT CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Device
Min
Typ
Max
Unit
4NXXM
−
1.2
1.5
V
H11B1M,
TIL113M
0.8
1.2
1.5
V
VR = 3.0 V
4NXXM
−
0.001
100
mA
VR = 6.0 V
H11B1M,
TIL113M
−
0.001
10
mA
All
−
150
−
pF
4NXXM,
TIL113M
30
60
−
V
H11B1M
25
60
−
V
EMITTER
VF
IR
C
Input Forward Voltage (Note 2)
Reverse Leakage Current (Note 2)
IF = 10 mA
Capacitance (Note 2)
VF = 0 V, f = 1.0 MHz
Collector−Emitter Breakdown Voltage
(Note 2)
IC = 1.0 mA, IB = 0
DETECTOR
BVCEO
BVCBO
Collector−Base Breakdown Voltage
(Note 2)
IC = 100 mA, IE = 0
All
30
100
−
V
BVECO
Emitter−Collector Breakdown Voltage
(Note 2)
IE = 100 mA, IB = 0
4NXXM
5.0
10
−
V
H11B1M,
TIL113M
7
10
−
V
Collector−Emitter Dark Current (Note 2)
VCE = 10 V, Base Open
All
−
1
100
nA
ICEO
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC registered data.
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3
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
ELECTRICAL CHARACTERISTICS − TRANSFER CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Device
Min
Typ
Max
Unit
IF = 10 mA, VCE = 10 V,
IB = 0
4N32M,
4N33M
50 (500)
−
−
mA (%)
4N29M,
4N30M
10 (100)
−
−
mA (%)
IF = 1 mA, VCE = 5 V
H11B1M
5 (500)
−
−
mA (%)
IF = 10 mA, VCE = 1 V
TIL113M
30 (300)
−
−
mA (%)
IF = 8 mA, IC = 2.0 mA
4NXXM
−
−
1.0
V
TIL113M
−
−
1.25
V
IF = 1 mA, IC = 1 mA
H11B1M
−
−
1.0
V
IF = 200 mA, IC = 50 mA,
VCC = 10 V, RL = 100 W
4NXXM,
TIL113M
−
−
5.0
ms
IF = 10 mA, VCE = 10 V,
RL = 100 W
H11B1M
−
25
−
ms
IF = 200 mA, IC = 50 mA,
VCC = 10 V, RL = 100 W
4N32M,
4N33M,
TIL113M
−
−
100
ms
4N29M,
4N30M
−
−
40
ms
H11B1M
−
18
−
ms
−
30
−
kHz
DC CHARACTERISTICS
IC(CTR)
VCE (SAT)
Collector Output Current
(Note 3) (Note 4) (Note 5)
Saturation Voltage (Note 3) (Note 5)
AC CHARACTERISTIC
tON
tOFF
Turn−on Time
Turn−off Time
IF = 10 mA, VCE = 10 V,
RL = 100 W
BW
Bandwidth (Note 6) (Note 7)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Indicates JEDEC registered data.
4. The current transfer ratio(IC / IF) is the ratio of the detector collector current to the LED input current.
5. Pulse test: pulse width = 300 ms, duty cycle v 2.0%.
6. IF adjusted to IC = 2.0 mA and IC = 0.7 mA rms.
7. The frequency at which IC is 3 dB down from the 1 kHz value.
ELECTRICAL CHARACTERISTICS − ISOLATION CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
VISO
Input−Output Isolation Voltage
t = 1 Minute
CISO
Isolation Capacitance
VI−O = 0 V, f = 1 MHz
RISO
Isolation Resistance
VI−O = ±500 VDC, TA = 25°C
Min
Typ
Max
Unit
4170
−
−
VACRMS
−
0.2
−
pF
1011
−
−
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
1.8
1.6
1.7
1.4
1.6
1.2
Normalized CTR
VF – Forward Voltage (V)
TYPICAL PERFORMANCE CURVES
1.5
1.4
TA = −55_C
1.3
1.2
1.0
0.8
0.6
0.4
0.2
TA = 100_C
1
10
IF – LED Forward Current (mA)
0.0
100
Figure 1. LED Forward Voltage vs. Forward Current
2
1.0
Normalized CTR
(CTRRBE / CTRRBE(OPEN))
IF = 5 mA
1.0
IF = 10 mA
0.8
0.6
IF = 20 mA
0.2
−60
Normalized to
IF = 10 mA
TA = 25_C
−40
−20
4
0.7
20
40
60
80
0.5
IF = 5 mA
0.4
0.3
0.2
0.0
100
VCE = 5.0 V
100
10
Figure 4. CTR vs. RBE (Unsaturated)
100
1.0
VCE = 0.3 V
VCE(SAT) − Collector−Emitter
Saturation Voltage (V)
Normalized CTR
(CTRRBE / CTRRBE(OPEN))
IF = 20 mA
IF = 5 mA
0.7
0.6
0.5
IF = 10 mA
0.4
0.3
0.2
10
TA = 25°C
1
IF = 2.5 mA
0.1
IF = 20 mA
0.01
0.1
0.0
1000
RBE − Base Resistance (kW)
Figure 3. Normalized CTR vs. Ambient Temperature
0.8
20
IF = 10 mA
0.6
0.1
0
18
0.8
TA − Ambient Temperature (5C)
0.9
6
8
10 12 14 16
IF – Forward Current (mA)
IF = 20 mA
0.9
1.2
Normalized CTR
0
Figure 2. Normalized CTR vs. Forward Current
1.4
0.4
Normalized to
IF = 10 mA
1.0
TA = 25_C
1.1
VCE = 5.0 V
TA = 25°C
0.001
10
100
RBE − Base Resistance (kW)
1000
Figure 5. CTR vs. RBE (Saturated)
IF = 5 mA
0.01
IF = 10 mA
0.1
1
IC − Collector Current (mA)
10
Figure 6. Collector−Emitter Saturation Voltage
vs. Collector Current
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5
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
TYPICAL PERFORMANCE CURVES (continued)
100
5.0
IF = 10 mA
VCC = 10 V
TA = 25_C
Normalized ton − (ton(RBE) / ton(open))
Switching Speed (ms)
1000
Toff
10
Tf
Ton
1
Tr
0.1
0.1
1
10
VCC = 10 V
IC = 2 mA
RL = 100 W
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100
100
10
10000
100000
Figure 8. Normalized ton vs. RBE
10000
VCE = 10 V
1000 TA = 25_C
ICEO − Collector−Emitter
Dark Current (nA)
Normalized toff − (toff(RBE) / toff(open))
Figure 7. Switching Speed vs. Load Resistor
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1000
RBE – Base Resistance (kW)
R – Load Resistor (kW)
VCC = 10 V
IC = 2 mA
RL = 100 W
10
100
1000
10000
100
10
1
0.1
0.01
0.001
100000
0
20
RBE – Base Resistance (kW)
40
60
80
Figure 9. Normalized toff vs. RBE
Figure 10. Dark Current vs. Ambient Temperature
SWITCHING TIME TEST CIRCUIT AND WAVEFORMS
WAVE FORMS
TEST CIRCUIT
VCC = 10 V
INPUT PULSE
IC
IF
INPUT
100
TA – Ambient Temperature (_C)
RL
10%
OUTPUT
OUTPUT PULSE
90%
RBE
tr
Adjust IF to produce IC = 2 mA
t on
Figure 11. Switching Time Test Circuit and Waveforms
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6
tf
t off
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
REFLOW PROFILE
260
240
Temperature (5C)
220
200
TP
TL
180
160
140
Max. Ramp−up Rate = 3°C/s
Max. Ramp−down Rate = 6°C/s
tP
Tsmax
tL
Preheat Area
Tsmin
ts
120
100
80
60
40
20
0
120
240
360
Time 25°C to Peak
Time (s)
Figure 12. Reflow Profile
REFLOW PROFILE
Profile Feature
Pb−Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60−120 s
Ramp−up Rate (tL to tP)
3°C/s max.
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60−150 s
Peak Body Package Temperature
260°C +0°C / −5°C
Time (tP) within 5°C of 260°C
30 s
Ramp−down Rate (TP to TL)
6°C/s max.
Time 25°C to Peak Temperature
8 min max.
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7
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
ORDERING INFORMATION
Part Number
Package
Packing Method†
4N29M
DIP 6−Pin
50 Units / Tube
4N29SM
SMT 6−Pin (Lead Bend)
50 Units / Tube
4N29SR2M
SMT 6−Pin (Lead Bend)
1000 / Tape & Reel
4N29VM
DIP 6−Pin, DIN EN/IEC60747−5−5 Option
50 Units / Tube
4N29SVM
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
50 Units / Tube
4N29SR2VM
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
1000 / Tape & Reel
4N29TVM
DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option
50 Units / Tube
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
8. The product orderable part number system listed in this table also applies to the 4N30M, 4N32M, 4N33M, H11B1M and TIL113M devices.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13449G
PDIP6 8.51X6.35, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BY
ISSUE A
DATE 15 JUL 2019
A
B
DOCUMENT NUMBER:
DESCRIPTION:
98AON13450G
PDIP6 8.51x6.35, 2.54P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13451G
PDIP6 8.51X6.35, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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