DATA SHEET
www.onsemi.com
6-Pin DIP High Voltage
Phototransistor
Optocouplers
6
1
PDIP6
CASE 646BY
4N38M, H11D1M, H11D3M,
MOC8204M
Description
The 4N38M, H11D1M, H11D3M and MOC8204M are
phototransistor−type optically coupled optoisolators. A gallium
arsenide infrared emitting diode is coupled with a high voltage NPN
silicon phototransistor. The device is supplied in a standard plastic
six−pin dual−in−line package.
Features
• High Voltage:
MOC8204M, BVCEO = 400 V
♦ H11D1M, BVCEO = 300 V
♦ H11D3M, BVCEO = 200 V
Safety and Regulatory Approvals:
♦ UL1577, 4,170 VACRMS for 1 Minute
DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
♦
•
•
Applications
•
•
•
•
•
Power Supply Regulators
Digital Logic Inputs
Microprocessor Inputs
Appliance Sensor Systems
Industrial Controls
© Semiconductor Components Industries, LLC, 2022
February, 2022 − Rev. 0
6
6
1
1
PDIP6
CASE 646BZ
PDIP6
CASE 646BX
MARKING DIAGRAM
ON
H11D1
VXYYQ
ON
= Company Logo
H11D1 = Specific Device Code
V
= DIN EN/IEC60747−5−5 Option
(only appears on component ordered with
this option)
X
= One−Digit Year Code
YY
= Digit Work Week
Q
= Assembly Package Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 410
of this data sheet.
1
Publication Order Number:
MOC8204M/D
4N38M, H11D1M, H11D3M, MOC8204M
SCHEMATICS
ANODE 1
CATHODE
6 BASE
5 COLLECTOR
2
4 EMITTER
N/C 3
Figure 1. Schematics
SAFETY AND INSULATION RATINGS
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Characteristic
< 150 VRMS
I − IV
< 300 VRMS
I − IV
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
175
Value
Unit
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test
with tm = 10 s, Partial Discharge < 5 pC
1360
Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 s, Partial Discharge < 5 pC
1594
Vpeak
VIORM
Maximum Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over−Voltage
6000
Vpeak
External Creepage
≥7
mm
External Clearance
≥7
mm
VPR
Parameter
External Clearance (for Option TV, 0.4” Lead Spacing)
≥ 10
mm
DTI
Distance Through Insulation (Insulation Thickness)
≥ 0.5
mm
TS
Case Temperature (Note 1)
175
°C
IS,INPUT
Input Current (Note 1)
350
mA
PS,OUTPUT
Output Power (Note 1)
800
mW
> 109
Ω
RIO
Insulation Resistance at TS, VIO = 500 V (Note 1)
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the
safety ratings shall be ensured by means of protective circuits.
1. Safety limit values – maximum values allowed in the event of a failure.
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2
4N38M, H11D1M, H11D3M, MOC8204M
ABSOLUTE MAXIUM RATINGS
Symbol
Parameter
Device
Value
Unit
TOTAL DEVICE
TSTG
Storage Temperature
All
−40 to + 125
°C
TOPR
Operating Temperature
All
−40 to + 100
°C
Junction Temperature
All
−40 to + 125
°C
Lead Solder Temperature
All
260 for 10 seconds
°C
Total Device Power Dissipation @ TA = 25°C
All
420
mW
3.5
mW/°C
TJ
TSOL
PD
Derate Above 25°C
EMITTER
IF
Forward DC Current (Note 2)
All
80
mA
VR
Reverse Input Voltage (Note 2)
All
6.0
V
Forward Current – Peak (1 μs pulse, 300 pps) (Note 2)
All
3.0
A
LED Power Dissipation @ TA = 25°C (Note 2)
All
IF(pk)
PD
Derate Above 25°C
120
mW
1.41
mW/°C
DETECTOR
PD
All
Power Dissipation @ TA = 25°C
300
mW
4.0
mW/°C
MOC8204M
400
V
H11D1M
300
V
H11D3M
200
V
Derate Linearly Above 25°C
VCEO
VCBO
VECO
IC
Collector to Emitter Voltage (Note 2)
Collector Base Voltage (Note 2)
Emitter to Collector Voltage (Note 2)
Collector Current (Continuous)
4N38M
80
V
MOC8204M
400
V
H11D1M
300
V
H11D3M
200
V
4N38M
80
V
H11D1M,
H11D3M,
MOC8204M
7
V
All
100
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
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3
4N38M, H11D1M, H11D3M, MOC8204M
ELECTRICAL CHARACTERISTICS
Symbol
(TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Device
Min
Typ
Max
Unit
All
−
1.15
1.50
V
All
−
−1.8
−
mV/°C
INDIVIDUAL COMONENT CHARACTERISTICS
Emitter
VF
Forward Voltage (Note 3)
IF = 10 mA
ΔVF
ΔTA
Forward Voltage Temperature
Coefficient
BVR
Reverse Breakdown Voltage
IR = 10 μA
All
6
25
−
V
Junction Capacitance
VF = 0 V, f = 1 MHz
All
−
50
−
pF
−
65
−
pF
All
−
0.05
10
μA
MOC8204M
400
−
−
V
H11D1M
300
−
−
V
H11D3M
200
−
−
V
CJ
VF = 1 V, f = 1 MHz
IR
Reverse Leakage Current
(Note 3)
VR = 6 V
Breakdown Voltage
Collector−to−Emitter (Note 3)
RBE = 1 MΩ,
IC = 1.0 mA, IF = 0
Detector
BVCEO
No RBE, IC = 1.0 mA
BVCBO
Collector to Base (Note 3)
IC = 100 μA, IF = 0
4N38M
80
−
−
V
MOC8204M
400
−
−
V
H11D1M
300
−
−
V
H11D3M
200
−
−
V
4N38M
80
−
−
V
BVEBO
Emitter to Base
IE = 100 μA, IF = 0
4N38M
7
−
−
V
BVECO
Emitter to Collector
IE = 100 μA, IF = 0
All
7
10
−
V
Leakage Current Collector to
Emitter (Note 3) (RBE = 1 MΩ)
VCE = 300 V, IF = 0, TA = 25°C
MOC8204M
−
−
100
nA
−
−
250
μA
−
−
100
nA
−
−
250
μA
−
−
100
nA
−
−
250
μA
4N38M
−
−
50
nA
IF = 10 mA, VCE = 10 V,
RBE = 1 MΩ
H11D1M,
H11D3M,
MOC8204M
2 (20)
−
−
mA (%)
IF = 10 mA, VCE = 10 V
4N38M
2 (20)
−
−
mA (%)
IF = 10 mA, IC = 0.5 mA,
RBE = 1 MΩ
H11D1M,
H11D3M,
MOC8204M
−
0.1
0.4
V
IF = 20 mA, IC = 4 mA
4N38M
−
−
1.0
V
VCE = 10 V, IC = 2 mA,
RL = 100 Ω
All
−
5
−
μs
All
−
5
−
μs
4170
−
−
VACRMS
−
0.2
−
pF
1011
−
−
Ω
ICEO
VCE = 300 V, IF = 0, TA = 100°C
VCE = 200 V, IF = 0, TA = 25°C
H11D1M
VCE = 200 V, IF = 0, TA = 100°C
VCE = 100 V, IF = 0, TA = 25°C
H11D3M
VCE = 100 V, IF = 0, TA = 100°C
No RBE, VCE = 60 V, IF = 0, TA = 25°C
TRANSFER CHARACTERISTICS
Emitter
CTR
VCE(SAT)
Current Transfer Ratio,
Collector−to−Emitter
Saturation Voltage (Note 3)
Switching Times
tON
Non−Saturated Turn−on Time
tOFF
Turn−off Time
ISOLATION CHARACTERISTICS
VISO
Input−Output Isolation Voltage
t = 1 Minute
CISO
Isolation Capacitance
VI−O = 0 V, f = 1 MHz
RISO
Isolation Resistance
VI−O = ±500 VDC, TA = 25°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Parameters meet or exceed JEDEC registered data (for 4N38M only).
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4
4N38M, H11D1M, H11D3M, MOC8204M
TYPICAL PERFORMANCE CURVES
NORMALIZED IC – OUTPUT CURRENT
VF – FORWARD VOLTAGE (V)
1.8
1.7
1.6
1.5
1.4
1.3
TA = −55°C
1.2
TA = 25°C
1.1
1.0
1
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25°C
10
IF = 5 mA
0.1
0.01
TA = 100°C
10
100
0.1
1000
NORMALIZED IC – OUTPUT CURRENT
IF = 5 mA
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25°C
−40
−20
0
20
40
60
80
Figure 4. Normalized Output Current vs. LED
Input Current
Figure 5. Normalized Output Current vs.
Temperature
VCE = 300 V
10
VCE = 50 V
1
0.1
10
IF = 10 mA
TA – AMBIENT TEMPERATURE (°C)
VCE = 100 V
100
1
IF – LED INPUT DCURRENT (mA)
Normalized to:
VCE = 100 V
RBE = 106 Ω
TA = 25°C
10000
100
IF = 20 mA
0.01
−60
10
NORMALIZED ICBO – COLLECTOR−
BASE CURRENT
NORMALIZED IC – OUTPUT CURRENT
NORMALIZED ICEO − DARK CURRENT
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25°C
1
10
Figure 3. Normalized Output Characteristics
0.1
0.01
1
VCE − COLLECTOR VOLTAGE (V)
Figure 2. LED Forward Voltage vs. Forward
Current
1
IF = 10 mA
1
IF – LED FORWARDCURRENT (mA)
10
IF = 50 mA
20
30
40
50
60
70
80
90
100 110
100
10
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25°C
9
8
7
IF = 50 mA
6
5
4
3
2
IF = 10 mA
IF = 5 mA
1
0
−60
TA – AMBIENT TEMPERATURE (°C)
−40
−20
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
Figure 7. Normalized Collector−Base Current
vs. Temperature
Figure 6. Normalized Dark Current vs. Ambient
Temperature
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5
4N38M, H11D1M, H11D3M, MOC8204M
REFLOW PROFILE
Figure 8. Reflow Profile
Profile Feature
Pb−Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60 − 120 seconds
Ramp−up Rate (t to tP)
3°C / second max.
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60 − 150 seconds
Peak Body Package Temperature
260°C + 0°C / −5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp−down Rate (TP to TL)
6°C / second max.
Time 25°C to Peak Temperature
8 minutes max.
Table 1. ORDERING INFORMATION
Part Number
Package
Packing Method†
H11D1M
DIP 6−Pin
Tube (50 Units)
H11D1SM
SMT 6−Pin (Lead Bend)
Tube (50 Units)
H11D1SR2M
SMT 6−Pin (Lead Bend)
Tape and Reel (1000 Units)
H11D1VM
DIP 6−Pin, DIN EN/IEC60747−5−5 Option
Tube (50 Units)
H11D1SVM
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
Tube (50 Units)
H11D1SR2VM
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
Tape and Reel (1000 Units)
H11D1TVM
DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option
Tube (50 Units)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
4. The product orderable part number system listed in this table also applies to the 4N38M, H11D3M, and MOC8204M devices.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13449G
PDIP6 8.51X6.35, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BY
ISSUE A
DATE 15 JUL 2019
A
B
DOCUMENT NUMBER:
DESCRIPTION:
98AON13450G
PDIP6 8.51x6.35, 2.54P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13451G
PDIP6 8.51X6.35, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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