939113424610-T3N

XBSC / UBSC / BBSC / ULSC - 100+/60+/40/20 GHz Ultra Broadband Surface Mounted Silicon Capacitors Rev 1.3 Key features Key applications • Ultra broadband performance up to 110 GHz • Optoelectronics/high-speed data • Resonance free allowing ultra low group delay variation • Trans-Impedance Amplifiers (TIA) • Ultra low insertion loss thanks to an excellent impedance matching in transmission mode • Low ESL and low ESR in bypass grounding mode • High stability of capacitance value over temperature, voltage and aging • High reliability • Compatible with lead free reflow soldering • Receive-and-Transmit Optical Sub-Assembly (ROSA/ TOSA) • Synchronous Optical Networking (SONET) • High speed digital logic • Broadband test equipment • Broadband microwave/millimeter wave • Replacement of X7R and NP0 capacitors • Low profile applications (400 or 100 µm) (please refer to our Assembly Application Note for more details) The XBSC/UBSC/BBSC/ULSC Capacitors target optical communication systems (ROSA/TOSA,SONET and all optoelectronics) as well as high speed data systems or products. These capacitors are designed for DC blocking, coupling and bypass grounding applications. The unique technology of integrated passive devices in silicon developed by Murata Integrated Passive Solutions offers low insertion loss, low reflection and high phase stability from 16 kHz*, up to 110 GHz for the XBSC, up to 67 GHz for the UBSC, up to 40 GHz for the BBSC and up to 20 GHz for the ULSC. These deep trench silicon capacitors have been developed with a semiconductor MOS process. They provide very high reliability and capacitance stability over voltage (0.1%/V) and temperature (60 ppm/K). They have an extended operating temperature range from -55 to 150°C. Reliable and repeatable performances are obtained thanks to a fully controlled production line with high temperature curing (above 900°C) generating a highly pure oxide. The XBSC/UBSC/BBSC/ULSC series are compliant with standard JEDEC assembly rules, making the product fully compatible with high speed automated pick-and-place manufacturing operations. These capacitors are RoHS-compliant and are available either with ENIG terminations or lead-free prebumping depending on the case size. *Cut off frequency at 3dB based on 100nF capacitance value Ref: CLUBSC1.3 1 Murata Silicon Capacitors - XBSC Series Rev 1.3 XBSC 100 GHz+ electrical specifications Part number XBSC.xxx 939118492510-xxS 939118722456-xxS Product description Case size Parameter Thickness Surface Mount Xtrem Broadband Si Cap from -55 to 150°C, 100 GHz+ with SAC305 pre-bump Xtrem Broadband Si Cap 10 nF 100 GHz+ BV>11 0201M Xtrem Broadband Si Cap 5.6 nF 100 GHz+ BV>30 0201M 100 μm 100 μm Value Capacitance range 5.6 nF to 10 nF(*) Capacitance tolerance ±15 %(*) Operating temperature range -55 °C to 150 °C Storage temperature - 70 °C to 165 °C(**) Temperature coefficient +60 ppm/K Breakdown voltage (BV) 11 VDC or 30 VDC Capacitance variation versus RVDC 0.1 %/V (from 0 V to RVDC) Insertion loss (IL) up to 60 GHz+ 20 dB(***) Equivalent Series Inductance (ESL) Typ. 100 pH(***) @ SRF Equivalent Series Resistance (ESR) Typ. 300 mΩ (***) Insulation resistance 10 GΩ @ RVDC, @25°C, t>120s, for 10nF Ageing Negligible, < 0.001% / 1000 h Reliability FIT120s for 100nF 935152492510-xxS(*) Ultra Broadband Si Cap 10 nF 60 GHz+ BV>11 V 0201M 100 μm 935152722410-xxS(*) Ultra Broadband Si Cap 1 nF 60 GHz+ BV>30 V 0201M 100 μm 935152722456-xxS(*) Ultra Broadband Si Cap 5.6 nF 60 GHz+ BV>30 V 0201M 100 μm 935151723410-xxN Ultra Broadband Si Cap 1 nF 60 GHz+ BV>30 V 0201 400 µm 935152723410-xxN Ultra Broadband Si Cap 1 nF 60 GHz+ BV>30 V 0201 100 μm 935151723510-xxN Ultra Broadband Si Cap 10 nF 60 GHz+ BV>30 V 0201 400 µm 935152723510-xxN Ultra Broadband Si Cap 10 nF 60 GHz+ BV>30 V 0201 100 μm 935151783522-xxN Ultra Broadband Si Cap 22 nF 60 GHz+ BV>30 V 0201 400 µm 935152783522-xxN Ultra Broadband Si Cap 22 nF 60 GHz+ BV>30 V 0201 100 μm 935151424610-xxN Ultra Broadband Si Cap 100 nF 60 GHz+ BV>11 V 0402 400 µm 935152424610-xxN Ultra Broadband Si Cap 100 nF 60 GHz+ BV>11 V 0402 100 µm 935151724547-xxN Ultra Broadband Si Cap 47 nF 60 GHz+ BV>30 V 0402 400 µm Aging Negligible, < 0.001% / 1000 h 935152724547-xxN Ultra Broadband Si Cap 47 nF 60 GHz+ BV>30 V 0402 100 µm Reliability FIT11 V 0201M 100 μm 939114722410-xxS(*) Broadband Si Cap 1 nF 40 GHz BV>30 V 0201M 100 μm 939114722456-xxS(*) Broadband Si Cap 5.6 nF 40 GHz BV>30 V 0201M 100 μm 939113733510-xxN Broadband Si Cap 10 nF 40 GHz BV>30 V 0201 400 µm 939114733510-xxN Broadband Si Cap 10 nF 40 GHz BV>30 V 0201 100 μm 939113424610-xxN Broadband Si Cap 100 nF 40 GHz BV>11 V 0402 400 µm 939114424610-xxN Broadband Si Cap 100 nF 40 GHz BV>11 V 0402 100 μm (*) only leadfree pre-bumped version available Value Capacitance range 1 nF to 100 nF(**) Capacitance tolerance ±15 %(**) Operating temperature range -55 °C to 150 °C Storage temperature - 70 °C to 165 °C(***) Temperature coefficient +60 pmm/K Breakdown voltage (BV) 11 VDC or 30 VDC Capacitance variation versus RVDC 0.1%/V (from 0 to RVDC) Insertion loss (IL) up to 40 GHz 15 dB(****) Equivalent Series Inductance (ESL) Typ. 100 pH(****) @ SRF Equivalent Series Resistance (ESR) Typ. 500 mΩ (****) Insulation resistance 100 GΩ @ RVDC, @25°C, t>120s for 100nF Aging Negligible, < 0.001% / 1000 h Reliability FIT11 V 0201M 100 μm 935156722410-xxS(*) Ultra Large band Si Cap 1 nF 20 GHz BV>30 V 0201M 100 μm 935156722456-xxS(*) Ultra Large band Si Cap 5.6 nF 20 GHz BV>30 V 0201M 100 μm 935155733510-xxN Ultra Large band Si Cap 10 nF 20 GHz BV>30 V 0201 400 µm 935156733510-xxN Ultra Large band Si Cap 10 nF 20 GHz BV>30 V 0201 100 μm 935155424610-xxN Ultra Large band Si Cap 100 nF 20 GHz BV>11 V 0402 400 µm 935156424610-xxN Ultra Large band Si Cap 100 nF 20 GHz BV>11 V 0402 100 μm 935155425610-xxN Ultra Large band Si Cap 100 nF 20 GHz BV>11 V 0603 400 µm 935156425610-xxN Ultra Large band Si Cap 100 nF 20 GHz BV>11 V 0603 100 μm (*) only leadfree pre-bumped version available Value Capacitance range 1 nF to 100 nF(**) Capacitance tolerance ±15 %(**) Operating temperature range -55 °C to 150 °C Storage temperature - 70 °C to 165 °C(***) Temperature coefficient +60 pmm/K Breakdown voltage (BV) 11 VDC or 30 VDC Capacitance variation versus RVDC 0.1%/V (from 0 to RVDC) Insertion loss (IL) up to 20 GHz 20 dB(****) Equivalent Series Inductance (ESL) Typ. 100 pH(****) @ SRF Equivalent Series Resistance (ESR) Typ. 500 mΩ (****) Insulation resistance 100 GΩ @ RVDC, @25°C, t>120s for 100nF Aging Negligible, < 0.001% / 1000 h Reliability FIT Capacitor > Silicon Capacitor > XBSC / UBSC / BBSC / ULSC Series Download the pdf file called : ‘Assembly Note UBSC / BBSC / ULSC V1.7_Murata’ Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. www.murata.com mis@murata.com Ref: CLUBSC1.3 6