AFGHL50T65SQ

Field Stop Trench IGBT 50A, 650V AFGHL50T65SQ Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQ which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application. It is a stand−alone IGBT. www.onsemi.com Features • • • • • • • • • AEC−Q101 Qualified Maximum Junction Temperature: TJ = 175°C Positive Temperature Co−efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A 100% of the Parts are Tested for ILM (Note 2) Fast Switching Tight Parameter Distribution RoHS Compliant 50 A, 650 V VCESat = 1.6 V C G E Typical Applications • • • • Automotive HEV−EV Onboard Chargers Automotive HEV−EV DC−DC Converters Totem Pole Bridgeless PFC PTC MAXIMUM RATINGS G Rating Symbol Value Unit Collector−to−Emitter Voltage VCES 650 V Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VGES ±20 ±30 V IC 80 50 A Pulsed Collector Current (Note 2) ILM 200 A Pulsed Collector Current (Note 3) ICM 200 A Maximum Power Dissipation @ TC = 25°C @ TC = 100°C PD 268 134 W TJ, TSTG −55 to +175 °C TL 300 °C Collector Current (Note 1) @ TC = 25°C @ TC = 100°C Operating Junction / Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire 2. VCC = 400 V, VGE = 15 V, IC = 200 A, RG = 15 W, Inductive Load 3. Repetitive Rating: pulse width limited by max. Junction temperature C E TO−247−3L CASE 340CX MARKING DIAGRAM &Z&3&K AFGHL 50T65SQ &Z = Assembly Plant Code &3 = 3−Digit Date Code &K = 2−Digit Lot Traceability Code AFGHL50T65SQ = Specific Device Code ORDERING INFORMATION Device AFGHL50T65SQ © Semiconductor Components Industries, LLC, 2019 January, 2020 − Rev. 1 1 Package Shipping TO−247−3L 30 Units / Rail Publication Order Number: AFGHL50T65SQ/D AFGHL50T65SQ THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.56 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Conditions Symbol Min Typ Max Unit Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 1 mA BVCES 650 − − V Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 1 mA − 0.6 − V/°C OFF CHARACTERISTICS DBVCES DTJ Collector−emitter cut−off current, gate−emitter short−circuited VGE = 0 V, VCE = 650 V ICES − − 250 mA Gate leakage current, collector− emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − ±400 nA VGE = VCE, IC = 50 mA VGE(th) 3.4 4.9 6.4 V VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, TJ = 175°C VCE(sat) − − 1.6 1.95 2.1 − V VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 3209 − pF Coes − 42 − Cres − 12 − Qg − 99 − Qge − 17 − Qgc − 23 − td(on) − 19 − tr − 11 − td(off) − 87 − tf − 5 − Eon − 0.35 − Eoff − 0.12 − ON CHARACTERISTICS Gate−emitter threshold voltage Collector−emitter saturation voltage DYNAMIC CHARACTERISTICS Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Gate−to−emitter charge VCE = 400 V, IC = 50 A, VGE = 15 V Gate−to−collector charge nC SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TC = 25°C, VCC = 400 V, IC = 25 A, RG = 4.7 W, VGE = 15 V, Inductive Load, FWD: AFGHL50T65SQD Turn−off switching loss Total switching loss Ets − 0.47 − td(on) − 20 − tr − 28 − td(off) − 81 − tf − 36 − Eon − 0.95 − Turn−off switching loss Eoff − 0.46 − Total switching loss Ets − 1.41 − Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TC = 25°C, VCC = 400 V, IC = 50 A, RG = 4.7 W, VGE = 15 V, Inductive Load, FWD: AFGHL50T65SQD www.onsemi.com 2 ns mJ ns mJ AFGHL50T65SQ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Continued) Parameter Test Conditions Symbol Min Typ Max Unit td(on) − 18 − ns tr − 14 − td(off) − 99 − tf − 7 − Eon − 0.66 − Turn−off switching loss Eoff − 0.3 − Total switching loss Ets − 0.96 − td(on) − 20 − tr − 29 − td(off) − 88 − tf − 46 − Eon − 1.42 − Turn−off switching loss Eoff − 0.65 − Total switching loss Ets − 2.07 − SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 175°C, VCC = 400 V, IC = 25 A, RG = 4.7 W, VGE = 15 V, Inductive Load, FWD: AFGHL50T65SQD TJ = 175°C, VCC = 400 V, IC = 50 A, RG = 4.7 W, VGE = 15 V, Inductive Load, FWD: AFGHL50T65SQD mJ ns mJ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 AFGHL50T65SQ TYPICAL CHARACTERISTICS 200 200 20V T C = 25°C 20V T C = 175°C 15V 12V 150 Collector Current, I C [A] Collector Current, I C [A] 15V 10V V GE = 8V 100 50 0 0 12V 150 10V V GE = 8V 100 50 0 1 2 3 4 Collector−Emitter Voltage, V CE [V] 5 0 1 Figure 1. Typical Output Characteristics Collector Current, I C [A] Common Emitter V GE = 15V 3.0 T C = 25°C T C = 175°C 150 100 50 0 0 1 2 3 4 Collector−Emitter Voltage, VCE [V] Common Emitter V GE = 15V 100 A 2.0 50 A I C = 25 A 1.0 −100 5 Figure 3. Typical Saturation Voltage 200 20 Common Emitter T C = 25°C Collector− Emitter Voltage, VCE [V] Collector − Emitter Voltage, V CE [V] −50 0 50 100 150 Collector−Emitter Case Temperature, TC [ ° C] Figure 4. Saturation Voltage vs. Case Temperature 20 16 12 8 100A 50A 4 0 5 Figure 2. Typical Output Characteristics Collector − Emitter Voltage, VCE [V] 200 2 3 4 Collector−Emitter Voltage, VCE [V] IC = 25A 4 8 12 16 Gate−Emitter Voltage, VGE [V] 20 Common Emitter T C = 175°C 16 12 8 4 0 4 Figure 5. Saturation Voltage vs. VGE 100A 50A IC = 25A 8 12 16 Gate−Emitter Voltage, VGE [V] Figure 6. Saturation Voltage vs. VGE www.onsemi.com 4 20 AFGHL50T65SQ TYPICAL CHARACTERISTICS 15 V CC = 200V Common Emitter Gate − Emitter Voltage, V GE [V] 10000 Capacitance [pF] C ies 1000 C oes 100 C res 10 1 Common Emitter V GE = 0V, f = 1Mhz T C = 25°C 10 1 T C = 25°C 400V 9 6 3 0 0 30 300V 12 Collector−Emitter Voltage, VCE [V] 20 40 60 80 Gate Charge, Q g [nC] Figure 7. Capacitance Characteristics Figure 8. Gate Charge td(on) 10 Switching Time [ns] Switching Time [ns] tr Common Emitter V CC = 400V, VGE = 15V IC = 50A T C = 25°C T C = 175°C 20 30 Gate Resistance, R g [ W ] 100 tf 10 0 50 40 t d(off) Figure 9. Turn−On Characteristics vs. Gate Resistance Switching Time [ns] 100 Common Emitter VCC = 400V, VGE = 15V, RG = 4.7 W TC = 25°C TC = 175°C 35 60 85 110 Collector Current, IC [A] 10 20 30 Gate Resistance, R g [ W ] 40 50 tf tr 100 td(on) 10 10 Common Emitter V CC = 400V, V GE = 15V, IC = 50A T C = 25°C T C = 175°C Figure 10. Turn−Off Characteristics vs. Gate Resistance Switching Time [ns] 200 120 1000 100 10 0 100 t d(off) 10 1 0 135 Common Emitter V CC = 400V, V GE = 15V, RG = 4.7 W T C = 25°C T C = 175°C 25 50 75 100 125 Collector Current, I C [A] Figure 11. Turn−On Characteristics vs. Collector Current Figure 12. Turn−Off Characteristics vs. Collector Current www.onsemi.com 5 150 AFGHL50T65SQ TYPICAL CHARACTERISTICS 10 10 E on Switching Loss [mJ] Switching Loss [mJ] E on 1 Common Emitter V CC = 400V, VGE = 15V, I C = 50A T C = 25°C T C = 175°C E off 0.1 0 10 20 30 Gate Resistance, R g [ W ] E off Common Emitter V CC = 400V, V GE = 15V, RG = 4.7 W T C = 25°C T C = 175°C 0.1 0 50 40 1 Figure 13. Switching Loss vs. Gate Resistance 25 50 75 100 Collector Current, I C [A] 125 150 Figure 14. Switching Loss vs. Collector Current 300 Collector Current, I C [A] 100 DC 10 ms 100 ms 1ms 10 1 0.1 1 10ms *Notes: 1. T C = 25°C 2. T J = 175°C 3. Single Pulse 1000 10 100 Collector − Emitter Voltage, VCE [V] Figure 15. SOA Characteristics Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Notes: Duty Factor, D = t1/t2 Peak TJ = PDM x ZqJC (t) + TC P DM t1 t2 Single Pulse 10−5 10 −4 10 −3 10−2 10−1 Rectangular Pulse Duration [sec] Figure 16. transient Thermal Impedance of IGBT www.onsemi.com 6 100 101 AFGHL50T65SQ TO−247−3LD CASE 340CX ISSUE O www.onsemi.com 7 AFGHL50T65SQ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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