BAV19TR

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This literature is subject to all applicable copyright laws and is not for resale in any manner. BAV19 / BAV20 / BAV21 BAV19 / 20 / 21 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol VRRM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Value Units 120 200 250 200 V V V mA 1.0 4.0 -65 to +200 A A °C 175 °C Value Units BAV19 BAV20 BAV21 IF(AV) Average Rectified Forward Current IFSM Tstg Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range TJ Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter PD Power Dissipation 500 mW RθJA Thermal Resistance, Junction to Ambient 300 °C/W Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter VR Breakdown Voltage VF Forward Voltage IR Reverse Current Test Conditions BAV19 BAV20 BAV21 BAV19 BAV20 BAV21 CT Total Capacitance trr Reverse Recovery Time 2001 Fairchild Semiconductor Corporation IR = 100 µA IR = 100 µA IR = 100 µA IF = 100 mA IF = 200 mA VR = 100 V VR = 100 V, TA = 150°C VR = 150 V VR = 150 V, TA = 150°C VR = 200 V VR = 200 V, TA = 150°C VR = 0, f = 1.0 MHz IF = IR = 30 mA, IRR = 3.0 mA, RL = 100Ω Min Max Units 1.0 1.25 100 100 100 100 100 100 5.0 V V V V V nA µA nA µA nA µA pF 50 ns 120 200 250 BAV19/20/21, Rev. C (continued) Typical Characteristics 50 325 Ta= 25 °°C Reverse Current, I R [nA] Reverse Voltage, VR [V] Ta=25 °C 300 275 40 30 20 10 0 3 5 10 20 30 50 100 55 R everse C urrent, I R [uA] Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100uA 100 R everse Voltage, V R [V] GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Figure 2. Reverse Current vs Reverse Voltage IR - 55 to 205 V 100 Ta= 25 °C Ta= 25 °C 450 Forward Voltage, V R [mV] Reverse Current, I R [nA] 90 80 70 60 50 40 30 400 350 300 250 20 180 200 220 240 Reverse Voltage, V R [V] 255 1 2 3 5 10 20 30 50 100 Forward Current, IF [uA] GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Figure 3. Reverse Current vs Reverse Roltage IR - 180 to 225 V Figure 4. Forward Voltage vs Forward Current VF - 1.0 to 100uA 1.4 Ta= 25 °C ° Ta= 25 C 700 Forward Voltage, VF [mV] Forward Voltage, V F [mV] 1.3 650 600 550 500 1.2 1.1 1.0 0.9 0.8 0.7 450 0.1 0.2 0.3 0.5 1 2 3 5 10 Forward Current, I F [mA] Figure 5. Forward Voltage vs Forward Current VF - 0.1 to 10mA 10 20 30 50 100 200 300 500 800 Forward Current, IF [mA] Figure 6. Forward Voltage vs Forward Current VF - 10 to 800mA BAV19/20/21, Rev. C BAV19 / BAV20 / BAV21 Small Signal Diode (continued) Typical Characteristics (continued) 1.3 900 Ta= 25 °C Total Capacitance [pF] Forward Voltage, VF [mV] 800 Ta= -40°°C 700 600 Ta= 25 ° C 500 400 Ta= +80 ° C 300 1.2 1.1 1.0 0.9 200 100 0.001 0.003 0.01 0.03 0.1 0.3 1 3 0.8 10 0 F orw ard C urrent, I F [m A ] 4 6 8 10 12 14 Reverse Voltage [V] Figure 7. Forward Voltage vs Ambient Temperature VF - 1.0 uA - 10 mA (-40 to +80 Deg C) Figure 8. Total Capacitance 50 400 300 Current [mA] 40 30 IF 200 (A V ) -A V 100 ER AG ER E CT IF I E DC U RR EN I F = I R = 30 mA Rloop = 100 Ohms 20 1.0 1.5 2.0 2.5 TmA 0 3.0 0 Reverse Recovery Current, I rr [mA] 50 100 150 Ambient Temperature, T A [ C] Figure 10. Average Rectified Current (IF(AV)) versus Ambient Temperature (TA) Figure 9. Reverse Recovery Time vs Reverse Recovery Current 500 Power Dissipation, PD [mW] Reverse Recovery Time [nS] 2 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 0 0 50 100 150 200 Average Temperature, IO [ C] Figure 11. Power Derating Curve BAV19/20/21, Rev. C BAV19 / BAV20 / BAV21 Small Signal Diode TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. 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