BC33740TA

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. BC337 / BC338 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low-Power Output Stages • Complement to BC327 / BC328 TO-92 12 3 Straight Lead Bulk Packing 1 2 1. Collector 2. Base 3. Emitter 3 Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method BC33716BU BC33716 TO-92 3L Bulk BC33716TA BC33716 TO-92 3L Ammo BC33716TFR BC33716 TO-92 3L Tape and Reel BC33725BU BC33725 TO-92 3L Bulk BC33725TA BC33725 TO-92 3L Ammo BC33725TAR BC33725 TO-92 3L Ammo BC33725TF BC33725 TO-92 3L Tape and Reel BC33725TFR BC33725 TO-92 3L Tape and Reel BC33740BU BC33740 TO-92 3L Bulk BC33740TA BC33740 TO-92 3L Ammo BC33825TA BC33825 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value BC337 50 BC338 30 BC337 45 BC338 25 Unit VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C © 2002 Fairchild Semiconductor Corporation BC337 / BC338 Rev. 1.5 V V www.fairchildsemi.com BC337 / BC338 — NPN Epitaxial Silicon Transistor September 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Power Dissipation 625 mW Derate Above 25°C 5.0 mW/°C Thermal Resistance, Junction-to-Ambient 200 °C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions BVCEO Collector-Emitter Breakdown Voltage BC337 BVCES Collector-Emitter Breakdown Voltage BC337 BVEBO Emitter-Base Breakdown Voltage ICES hFE1 hFE2 BC338 BC338 Collector Cut-Off Current Max. 45 IC = 10 mA, IB = 0 IC = 0.1 mA, VBE = 0 IE = 0.1 mA, IC = 0 50 V 30 5 V 100 BC338 VCE = 25 V, IB = 0 2 100 DC Current Gain VBE(on) VCE = 1 V, IC = 100 mA 100 VCE = 1 V, IC = 300 mA 60 Unit V 25 2 Collector-Emitter Saturation Voltage Cob Typ. BC337 VCE = 45 V, IB = 0 VCE(sat) fT Min. nA 630 IC = 500 mA, IB = 50 mA 0.7 V Base-Emitter On Voltage VCE = 1 V, IC = 300 mA 1.2 V Current Gain Bandwidth Product VCE = 5 V, IC = 10 mA, f = 50 MHz 100 MHz Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 12 pF hFE Classification Classification 16 25 40 hFE1 100 ~ 250 160 ~ 400 250 ~ 630 hFE2 60 ~ 100 ~ 170 ~ © 2002 Fairchild Semiconductor Corporation BC337 / BC338 Rev. 1.5 www.fairchildsemi.com 2 BC337 / BC338 — NPN Epitaxial Silicon Transistor Thermal Characteristics(1) BC337 / BC338 — NPN Epitaxial Silicon Transistor Physical Dimensions Figure 1. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type © 2002 Fairchild Semiconductor Corporation BC337 / BC338 Rev. 1.5 www.fairchildsemi.com 3 BC337 / BC338 — NPN Epitaxial Silicon Transistor Physical Dimensions (Continued) Figure 2. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type © 2002 Fairchild Semiconductor Corporation BC337 / BC338 Rev. 1.5 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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