BC847BWT1G

BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. www.onsemi.com COLLECTOR 3 Features • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO V 65 45 30 BC846 BC847 BC848 3 1 SC−70/SOT−323 CASE 419 STYLE 3 2 Collector-Base Voltage VCBO 80 50 30 BC846 BC847 BC848 Emitter-Base Voltage V MARKING DIAGRAM VEBO 6.0 6.0 5.0 BC846 BC847 BC848 Collector Current − Continuous V IC 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit PD 200 mW RqJA 620 °C/W TJ, Tstg −55 to +150 °C XX MG G XX = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 12 of this data sheet. 1. FR−5 = 1.0 x 0.75 x 0.062 in. © Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev. 12 1 Publication Order Number: BC846AWT1/D BC846, BC847, BC848 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA) BC846 Series BC847 Series BC848 Series V(BR)CEO 65 45 30 − − − − − − V Collector −Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) BC846 Series BC847 Series BC848 Series V(BR)CES 80 50 30 − − − − − − V Collector −Base Breakdown Voltage (IC = 10 mA) BC846 Series BC847 Series BC848 Series V(BR)CBO 80 50 30 − − − − − − V Emitter −Base Breakdown Voltage (IE = 1.0 mA) BC846 Series BC847 Series BC848 Series V(BR)EBO 6.0 6.0 5.0 − − − − − − V ICBO − − − − 15 5.0 nA mA hFE − − − 90 150 270 − − − − 110 200 420 180 290 520 220 450 800 Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C (IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) − − − − 0.25 0.6 V Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) − − 0.7 0.9 − − V Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 − 660 − 700 770 mV fT 100 − − MHz Cobo − − 4.5 pF NF − − 10 dB SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) www.onsemi.com 2 BC846, BC847, BC848 BC846A, BC847A, BC848A 300 300 VCE = 1 V 200 25°C −55°C 100 VCE = 5 V 150°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 150°C 0 200 25°C 100 −55°C 0 0.001 0.01 0.1 1 0.001 0.01 1 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current Figure 2. DC Current Gain vs. Collector Current VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.18 0.16 IC/IB = 20 150°C 0.14 0.12 25°C 0.10 0.08 0.06 −55°C 0.04 0.02 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 3. Collector Emitter Saturation Voltage vs. Collector Current 0.9 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 −55°C IC/IB = 20 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 IC, COLLECTOR CURRENT (A) 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 4. Base Emitter Saturation Voltage vs. Collector Current Figure 5. Base Emitter Voltage vs. Collector Current www.onsemi.com 3 0.1 BC846, BC847, BC848 BC846A, BC847A, BC848A 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 C, CAPACITANCE (pF) 5.0 TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 7. Base−Emitter Temperature Coefficient 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 6. Collector Saturation Region 7.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 8. Capacitances 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 9. Current−Gain − Bandwidth Product www.onsemi.com 4 50 BC846, BC847, BC848 BC846B 600 VCE = 1 V 150°C 500 400 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 600 25°C 300 −55°C 200 100 0 VCE = 5 V 150°C 500 400 25°C 300 200 −55°C 100 0 0.001 0.01 0.1 1 0.001 0.01 1 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. DC Current Gain vs. Collector Current Figure 11. DC Current Gain vs. Collector Current VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.30 IC/IB = 20 150°C 0.25 0.20 25°C 0.15 0.10 −55°C 0.05 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 12. Collector Emitter Saturation Voltage vs. Collector Current 1.0 IC/IB = 20 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 IC, COLLECTOR CURRENT (A) 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 13. Base Emitter Saturation Voltage vs. Collector Current Figure 14. Base Emitter Voltage vs. Collector Current www.onsemi.com 5 0.1 BC846, BC847, BC848 2.0 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) BC846B TA = 25°C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 1.4 1.8 qVB for VBE 2.6 3.0 20 0.2 Figure 15. Collector Saturation Region f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25°C 20 Cib 10 6.0 2.0 Cob 0.1 0.2 1.0 2.0 10 20 0.5 5.0 VR, REVERSE VOLTAGE (VOLTS) 50 0.5 10 20 50 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) 100 200 Figure 16. Base−Emitter Temperature Coefficient 40 4.0 -55°C to 125°C 2.2 VCE = 5 V TA = 25°C 500 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 100 Figure 17. Capacitance Figure 18. Current−Gain − Bandwidth Product www.onsemi.com 6 BC846, BC847, BC848 BC847B, BC848B 600 VCE = 1 V 150°C 500 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 600 400 25°C 300 −55°C 200 100 0 VCE = 5 V 150°C 500 400 25°C 300 200 −55°C 100 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 19. DC Current Gain vs. Collector Current Figure 20. DC Current Gain vs. Collector Current VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.30 IC/IB = 20 0.25 150°C 0.20 25°C 0.15 0.10 −55°C 0.05 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 21. Collector Emitter Saturation Voltage vs. Collector Current VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 IC/IB = 20 VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 IC, COLLECTOR CURRENT (A) 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 22. Base Emitter Saturation Voltage vs. Collector Current Figure 23. Base Emitter Voltage vs. Collector Current www.onsemi.com 7 0.1 BC846, BC847, BC848 BC847B, BC848B 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 C, CAPACITANCE (pF) 5.0 TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 25. Base−Emitter Temperature Coefficient 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 24. Collector Saturation Region 7.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 26. Capacitances 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 27. Current−Gain − Bandwidth Product www.onsemi.com 8 50 BC846, BC847, BC848 BC847C, BC848C 1000 1000 150°C VCE = 1 V 700 25°C 600 VCE = 5 V 900 150°C 800 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 900 500 400 −55°C 300 200 100 800 700 600 25°C 500 400 −55°C 300 200 100 0 0 0.001 0.01 1 0.1 0.001 0.01 1 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 28. DC Current Gain vs. Collector Current Figure 29. DC Current Gain vs. Collector Current VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.30 IC/IB = 20 0.25 150°C 0.20 25°C 0.15 0.10 −55°C 0.05 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 30. Collector Emitter Saturation Voltage vs. Collector Current VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 IC/IB = 20 VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 IC, COLLECTOR CURRENT (A) 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 31. Base Emitter Saturation Voltage vs. Collector Current Figure 32. Base Emitter Voltage vs. Collector Current www.onsemi.com 9 0.1 BC846, BC847, BC848 BC847C, BC848C 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 C, CAPACITANCE (pF) 5.0 TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 34. Base−Emitter Temperature Coefficient 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 33. Collector Saturation Region 7.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 35. Capacitances 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 36. Current−Gain − Bandwidth Product www.onsemi.com 10 50 BC846, BC847, BC848 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 1 100 mS 10 mS 1 mS 1S 0.1 Thermal Limit 0.01 100 mS 10 mS 1 mS 0.1 1S Thermal Limit 0.01 0.001 0.001 1 10 0.1 100 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 37. Safe Operating Area for BC846A, BC846B Figure 38. Safe Operating Area for BC847A, BC847B, BC847C IC, COLLECTOR CURRENT (A) 1 100 mS 10 mS 1 mS 1S 0.1 Thermal Limit 0.01 0.001 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 39. Safe Operating Area for BC848A, BC848B, BC848C www.onsemi.com 11 100 100 BC846, BC847, BC848 DEVICE ORDERING AND SPECIFIC MARKING INFORMATION Device Specific Marking Code Package Shipping† BC846BWT1G 1B 3,000 / Tape & Reel 1E 3,000 / Tape & Reel 1F 3,000 / Tape & Reel SBC846BWT1G* BC847AWT1G SBC847AWT1G* BC847BWT1G SBC847BWT1G* SC−70 (SOT−323) (Pb−Free) BC847CWT1G SBC847CWT1G* 1G 3,000 / Tape & Reel BC847CWT3G SBC847CWT3G* 1G 10,000 / Tape & Reel BC848BWT1G NSVBC848BWT1G* BC848CWT1G 1K 3,000 / Tape & Reel 1L †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 12 BC846, BC847, BC848 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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