BCW33LT3G

BCW33LT1 General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage Rating VCEO 32 Vdc Collector − Base Voltage VCBO 32 Vdc Emitter − Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2), TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 3 SOT−23 (TO−236AB) CASE 318 PLASTIC PD 1 RqJA 2 PD MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. D3 M G G D3 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † BCW33LT1 SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 10,000/Tape & Reel SOT−23 (Pb−Free) 10,000/Tape & Reel BCW33LT1G BCW33LT3 BCW33LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 3 1 Publication Order Number: BCW33LT1/D BCW33LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 32 − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CBO 32 − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc − − 100 10 nAdc mAdc 420 800 − 0.25 0.55 0.70 Cobo − 4.0 pF NF − 10 dB OFF CHARACTERISTICS Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100°C) ICBO ON CHARACTERISTICS DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) VCE(sat) Base −Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) EQUIVALENT SWITCHING TIME TEST CIRCUITS +3.0 V 300 ns DUTY CYCLE = 2% 275 +10.9 V 10 < t1 < 500 ms DUTY CYCLE = 2% 10 k −0.5 V