BSP16T1G

BSP16T1G High Voltage Transistors PNP Silicon Features  These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO --300 Vdc Collector-Base Voltage VCBO --350 Vdc Emitter-Base Voltage VEBO --6.0 Vdc Collector Current IC --100 mAdc Total Device Dissipation @ TA = 25C (Note 1) PD 1.5 W Storage Temperature Range PD --65 to +150 C Junction Temperature TJ 150 C Symbol Max Unit RθJA 83.3 C/W PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 BASE 1 EMITTER 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction--to--Ambient Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in x 1.575 in x 0.059 in; mounting pad for the collector lead min. 0.93 sq. in. TO--223 CASE 318E STYLE 1 1 AYW BT2G G A = Assembly Location Y = Year W = Work Week BT2 =Device Code G = Pb--Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BSP16T1G Package Shipping† TO--223 (Pb--Free) 1000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.  Semiconductor Components Industries, LLC, 2010 September, 2010 -- Rev. 7 1 Publication Order Number: BSP16T1/D BSP16T1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max --300 -- --300 -- -- --50 -- --1.0 -- --20 30 120 -- -- 2.0 15 -- -- 15 Unit OFF CHARACTERISTICS Collector -- Emitter Breakdown Voltage (IC = --50 mAdc, IB = 0, L = 25 mH) V(BR)CEO Collector -- Base Breakdown Voltage (IC = --100 mAdc, IE = 0) V(BR)CBO Collector--Emitter Cutoff Current (VCE = --250 Vdc, IB = 0) ICES Collector--Base Cutoff Current (VCB = --280 Vdc, IE = 0) ICBO Emitter--Base Cutoff Current (VEB = --6.0 Vdc, IC = 0) IEBO Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (VCE = -- 10 Vdc, IC = --50 mAdc) hFE Collector-Emitter Saturation Voltage (IC = -- 50 mAdc, IB = -- 5.0 mAdc) VCE(sat) -Vdc DYNAMIC CHARACTERISTICS fT Current Gain -- Bandwidth Product (VCE = -- 10 Vdc, IC = --10 mAdc, f = 30 MHz) Collector--Base Capacitance (VCB = -- 10 Vdc, IE = 0, f = 1.0 MHz) Cobo http://onsemi.com 2 MHz pF BSP16T1G PACKAGE DIMENSIONS SOT--223 (TO--261) CASE 318E--04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE 1 2 3 b e1 e A1 C θ A 0.08 (0003) DIM A A1 b b1 c D E e e1 L L1 HE E MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0 θ L STYLE 1: PIN 1. 2. 3. 4. L1 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 ----------1.75 2.00 7.00 7.30 10 -- MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 -----0.069 0.276 -- MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 -----0.078 0.287 10 BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm  inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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