BSS138LT1G

BSS138L, BVSS138L Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. http://onsemi.com 200 mA, 50 V RDS(on) = 3.5 W Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications N−Channel 3 • Miniature SOT−23 Surface Mount Package Saves Board Space • BVSS Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant 1 2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Value Unit Drain−to−Source Voltage VDSS 50 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc 2 mA SOT−23 CASE 318 STYLE 21 Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 ms) ID IDM 200 800 Total Power Dissipation @ TA = 25°C PD 225 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C RqJA 556 °C/W TL 260 °C Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds MARKING DIAGRAM 3 Symbol Rating Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 J1 M G G 1 J1 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BSS138LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel BVSS138LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel BSS138LT3G SOT−23 10,000 / Tape & Reel (Pb−Free) Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 July, 2013 − Rev. 8 1 Publication Order Number: BSS138LT1/D BSS138L, BVSS138L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 50 − − Vdc − − − − − − 0.1 0.5 5.0 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc, 25°C) (VDS = 50 Vdc, VGS = 0 Vdc, 25°C) (VDS = 50 Vdc, VGS = 0 Vdc, 150°C) IDSS Gate−Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − ±0.1 mAdc Gate−Source Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.5 − 1.5 Vdc Static Drain−to−Source On−Resistance (VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C) (VGS = 5.0 Vdc, ID = 200 mAdc) rDS(on) − − 5.6 − 10 3.5 gfs 100 − − mmhos pF mAdc ON CHARACTERISTICS (Note 1) Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Ciss − 40 50 Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss − 12 25 Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss − 3.5 5.0 td(on) − − 20 td(off) − − 20 SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Turn−Off Delay Time (VDD = 30 Vdc, ID = 0.2 Adc,) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 ns BSS138L, BVSS138L TYPICAL ELECTRICAL CHARACTERISTICS 0.8 0.9 VGS = 3.5 V TJ = 25°C I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) VGS = 3.25 V 0.6 VGS = 3.0 V 0.5 VGS = 2.75 V 0.4 VGS = 2.5 V 0.3 0.2 0.1 0 VDS = 10 V 0.8 0.7 - 55°C 0.7 150°C 0.6 0.5 0.4 0.3 0.2 0.1 0 1 0 3 2 4 5 6 7 9 8 10 0 1.5 2 2.5 3.5 3 4 4.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics Figure 1. On−Region Characteristics 2.2 1.25 ID = 1.0 mA 2 Vgs(th) , VARIANCE (VOLTS) VGS = 10 V ID = 0.8 A 1.8 1.6 VGS = 4.5 V ID = 0.5 A 1.4 1.2 1 1.125 1 0.875 0.8 0.6 -55 -5 45 95 0.75 -55 145 -30 -5 45 20 95 70 120 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. On−Resistance Variation with Temperature Figure 4. Threshold Voltage Variation with Temperature 145 1.0E-5 10 VDS = 40 V TJ = 25°C IDSS, DRAIN-TO-SOURCE LEAKAGE (A) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1 0.5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 25°C 8 6 4 ID = 200 mA 2 1.0E-6 150°C 125°C 1.0E-7 1.0E-8 1.0E-9 0 0 500 1000 1500 2000 2500 0 3000 QT, TOTAL GATE CHARGE (pC) 5 10 15 20 25 30 35 40 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. Gate Charge Figure 6. IDSS http://onsemi.com 3 45 50 BSS138L, BVSS138L 10 VGS = 2.5 V 9 8 150°C 7 6 5 25°C 4 -55°C 3 2 1 0 0.1 0.05 0.2 0.15 0.25 RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 8 VGS = 2.75 V 7 150°C 6 5 4 25°C 3 2 -55°C 1 0 RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) VGS = 4.5 V 150°C 5 4.5 4 3.5 3 25°C 2.5 2 -55°C 1.5 1 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.45 0.4 0.5 4.5 VGS = 10 V 150°C 4 3.5 3 2.5 25°C 2 -55°C 1.5 1 0 0.05 0.1 ID, DRAIN CURRENT (AMPS) 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (AMPS) Figure 10. On−Resistance versus Drain Current Figure 9. On−Resistance versus Drain Current 1 I D , DIODE CURRENT (AMPS) 0.25 Figure 8. On−Resistance versus Drain Current 6 0 0.2 0.15 ID, DRAIN CURRENT (AMPS) Figure 7. On−Resistance versus Drain Current 5.5 0.1 0.05 ID, DRAIN CURRENT (AMPS) 120 100 TJ = 150°C 0.1 25°C -55°C 80 60 Ciss 0.01 40 Coss 20 0.001 Crss 0 0.2 0.4 0.6 0.8 1.0 0 1.2 0 5 10 15 VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 11. Body Diode Forward Voltage Figure 12. Capacitance http://onsemi.com 4 20 25 BSS138L, BVSS138L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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