BSS63LT1G

High Voltage Transistor PNP Silicon BSS63LT1G, NSVBSS63LT1G Features www.onsemi.com • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −100 Vdc Collector −Emitter Voltage RBE = 10 kW VCER Collector Current − Continuous IC 2 EMITTER Vdc −110 −100 3 mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1 Symbol PD RqJA Max 2 Unit SOT−23 CASE 318 STYLE 6 mW 225 1.8 mW/°C 556 °C/W PD MARKING DIAGRAM mW 300 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. BM M G G BM = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† BSS63LT1G SOT−23 (Pb−free) 3000 / Tape & Reel NSVBSS63LT1G SOT−23 (Pb−free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 February, 2021 − Rev. 9 1 Publication Order Number: BSS63LT1/D BSS63LT1G, NSVBSS63LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max −100 − − −110 − − −110 − − −6.0 − − − − −100 − − −10 − − −200 30 30 − − − − − − −250 − − −900 50 95 − − − 20 − − 10 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −100 mAdc) V(BR)CEO Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IE = 0, RBE = 10 kW) V(BR)CER Collector −Base Breakdown Voltage (IE = −10 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −10 mAdc) V(BR)EBO Collector Cutoff Current (VCB = −90 Vdc, IE = 0) ICBO Collector Cutoff Current (VCE = −110 Vdc, RBE = 10 kW) ICER Emitter Cutoff Current (VEB = −6.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc Vdc nAdc mAdc nAdc ON CHARACTERISTICS hFE DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −25 mAdc, VCE = −1.0 Vdc) Collector −Emitter Saturation Voltage (IC = −25 mAdc, IB = −2.5 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −25 mAdc, IB = −2.5 mAdc) VBE(sat) − mVdc mVdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −25 mAdc, VCE = −5.0 Vdc, f = 20 MHz) fT Case Capacitance (IE = IC = 0, VCB = −10 Vdc, f = 1.0 MHz) CC Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, Rg = 2 kW, f = 1.0 kHz, BW = 200 Hz) NF MHz pF dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. www.onsemi.com 2 BSS63LT1G, NSVBSS63LT1G TYPICAL CHARACTERISTICS 1000 1 25°C −55°C 100 qVBE, TEMPERATURE COEFFICIENT (mV/°C) 1 0.1 100 10 1000 0.6 150°C 0.3 0.2 0.1 1 10 100 1000 1000 1.0 VCE = −5 V 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.2 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Base−Emitter Saturation Voltage vs. Collector Current Figure 4. Base−Emitter Voltage vs. Collector Current 2.6 IC/IB = 10 2.4 TA = −55°C to 150°C 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.1 100 10 Figure 2. Collector−Emitter Saturation Voltage vs. Collector Current 25°C 0.4 1 Figure 1. DC Current Gain −55°C 0.5 −55°C IC, COLLECTOR CURRENT (mA) 1.0 0.7 25°C IC, COLLECTOR CURRENT (mA) IC/IB = 10 0.8 150°C 0.01 0.1 1.1 0.9 0.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 10 0.01 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 150°C IC/IB = 10 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN VCE = −5 V 1.0 TA = 25°C 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 50 mA 20 mA 100 mA IC = 200 mA 0.1 IC = 10 mA 0 0.01 0.1 IC, COLLECTOR CURRENT (mA) 1 10 IB, BASE CURRENT (mA) Figure 5. Base−Emitter Temperature Coefficient Figure 6. Collector Saturation Region www.onsemi.com 3 100 BSS63LT1G, NSVBSS63LT1G TYPICAL CHARACTERISTICS TJ = 25°C Cobo 10 1 0.1 0.2 0.4 0.6 1 2 4 6 10 CURRENT−GAIN BANDWIDTH PRODUCT (MHz) 1000 Cibo VCE = −5 V TJ = 25°C 100 1 0.1 40 60 100 20 10 0.2 0.5 1 2 5 10 20 50 100 VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 7. Capacitance Figure 8. Current−Gain Bandwidth Product 1000 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) 100 10 ms 100 100 ms 1s 10 1 0.1 0.1 Single Pulse Test at TA = 25°C 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 9. Safe Operating Area www.onsemi.com 4 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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