CM1293A-02SO

CM1293A ESD Protection Array, 2 and 4-Channel, Low Capacitance Product Description The CM1293A family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting systems with high data and clock rates or for circuits requiring low capacitive loading. Each ESD channel consists of a pair of diodes in series that steer the positive or negative ESD current pulse to either the positive (VP) or negative (VN) supply rail. A Zener diode is embedded between VP and VN which helps protect the VCC rail against ESD strikes. The CM1293A protects against ESD pulses up to ±8 kV contact discharge) per the IEC 61000−4−2 Level 4 standard. This device is particularly well−suited for protecting systems using high−speed ports such as USB2.0, IEEE1394 (FireWire®, i.LINKt), Serial ATA, DVI, HDMI, and corresponding ports in removable storage, digital camcorders, DVD−RW drives and other applications where extremely low loading capacitance with ESD protection are required in a small package footprint. Features • Two and Four Channels of ESD Protection • Provides ESD Protection to IEC61000−4−2 • • • • • • MSOP−10 MR SUFFIX CASE 846AE SC−74 SO SUFFIX CASE 318F SOT−143 SR SUFFIX CASE 318A BLOCK DIAGRAM VP CH4 CH1 VP CH3 CH2 VN CM1293A−02SR CM1293A−02SO CH1 VN CH2 CM1293A−04MR MARKING DIAGRAM ±8 kV Contact Discharge Low Loading Capacitance of 2.0 pF Max Low Clamping Voltage Channel I/O to I/O Capacitance 1.5 pF Typical Zener Diode Protects Supply Rail and Eliminates the Need for External By−Pass Capacitors Each I/O Pin Can Withstand over 1000 ESD Strikes* These Devices are Pb−Free and are RoHS Compliant ♦ Applications • DVI Ports, HDMI Ports in Notebooks, Set Top Boxes, Digital TVs, • • • http://onsemi.com LCD Displays Serial ATA Ports in Desktop PCs and Hard Disk Drives PCI Express Ports General Purpose High−Speed Data Line ESD Protection *Standard test condition is IEC61000−4−2 level 4 test circuit with each pin subjected to ±8 kV contact discharge for 1000 pulses. Discharges are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production test to verify that all of the tested parameters are within spec after the 1000 strikes. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 8 1 XXX MG G XXX M G XXX MG G = Specific Device Code = Date Code = Pb−Free Package (*Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† CM1293A−02SR SOT143−4 (Pb−Free) 3,000 / Tape & Reel CM1293A−02SO SC−74 (Pb−Free) 3,000 / Tape & Reel CM1293A−04MR MSOP−10 (Pb−Free) 4,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: CM1293A/D CM1293A PACKAGE/PINOUT DIAGRAM Table 1. PIN DESCRIPTIONS 2−Channel, 4−Lead SOT143−4 Package (CM1293A−02SR) Pin Name Type Description 1 VN GND 2 CH1 I/O ESD Channel 3 CH2 I/O ESD Channel 4 VP PWR Top View Negative Voltage Supply Rail VN (1) VP (4) D636 CH1 (2) Positive Voltage Supply Rail CH2 (3) 4−Lead SOT143−4 2−Channel, SC−74 Package (CM1293A−02SO) Pin Name Type 1 NC − 2 VN GND Description No Connect Top View Negative Voltage Supply Rail CH1 I/O ESD Channel 4 CH2 I/O ESD Channel VN (2) 5 NC − 6 VP PWR No Connect VP (6) 633 3 NC (1) CH1 (3) Positive Voltage Supply Rail NC (5) CH2 (4) 2−Channel SC−74 4−Channel, 10−Lead MSOP−10 Package (CM1293A−04MR) Name Type 1 CH1 I/O 2 NC − 3 VP PWR 4 CH2 I/O 5 NC − 6 CH3 I/O 7 NC − 8 VN GND 9 CH4 I/O 10 NC − Description ESD Channel Top View No Connect CH1 NC VP CH2 NC Positive Voltage Supply Rail ESD Channel No Connect D641 Pin NC CH4 VN NC CH3 10−Lead MSOP−10 ESD Channel No Connect Negative Voltage Supply Rail ESD Channel No Connect http://onsemi.com 2 CM1293A SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units 6.0 V Operating Temperature Range –40 to +85 °C Storage Temperature Range –65 to +150 °C (VN − 0.5) to (VP + 0.5) V Operating Supply Voltage (VP − VN) DC Voltage at any Channel Input Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 3. STANDARD OPERATING CONDITIONS Parameter Operating Temperature Range Package Power Rating SOT143−4 Package (CM1293A−02SR) SC−74 Package (CM1293A−02SO) MSOP−10 Package (CM1293A−04MR) Rating Units –40 to +85 °C mW 225 225 400 Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol Conditions VP Operating Supply Voltage (VP−VN) IP Operating Supply Current (VP−VN) = 3.3 V VF Diode Forward Voltage Top Diode Bottom Diode IF = 8 mA, TA = 25°C Channel Leakage Current TA = 25°C, VP = 5 V, VN = 0 V Channel Input Capacitance At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V ILEAK CIN 1. 2. 3. 4. Parameter DCIO Channel I/O to I/O Capacitance VESD ESD Protection − Peak Discharge Voltage at any Channel Input, in System Contact Discharge per IEC 61000−4−2 Standard Human Body Model, MIL−STD−883, Method 3015 Min 0.60 0.60 Typ Max Units 3.3 5.5 V 8.0 mA V 0.80 0.80 0.95 0.95 ±0.1 ±1.0 mA 2.0 pF 1.5 pF kV TA = 25°C (Notes 2 and 4) ±8 TA = 25°C (Notes 3 and 4) ±15 VCL Channel Clamp Voltage Positive Transients Negative Transients TA = 25°C, IPP = 1A, tP = 8/20 mS (Note 4) RDYN Dynamic Resistance Positive Transients Negative Transients TA = 25°C, IPP = 1A, tP = 8/20 mS (Note 4) +9.9 –1.6 0.96 0.5 All parameters specified at TA = –40°C to +85°C unless otherwise noted. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VP = 3.3 V, VN grounded. Human Body Model per MIL−STD−883, Method 3015, CDischarge = 100 pF, RDischarge = 1.5 kW, VP = 3.3 V, VN grounded. These measurements performed with no external capacitor on VP. http://onsemi.com 3 V W CM1293A PERFORMANCE INFORMATION Input Channel Capacitance Performance Curves Figure 1. Typical Variation of CIN vs. VIN (f = 1 MHz, VP = 3.3 V, VN = 0 V, 0.1 F Chip Capacitor between VP and VN, 255C) Figure 2. Typical Variation of CIN vs. Temp (f = 1 MHz, VIN = 30 mV, VP = 3.3 V, VN = 0 V, 0.1 F Chip Capacitor between VP and VN) http://onsemi.com 4 CM1293A PERFORMANCE INFORMATION (Cont’d) Typical Filter Performance (nominal conditions unless specified otherwise, 50  Environment) Figure 3. Insertion Loss (S21) vs. Frequency (0 V DC Bias, VP = 3.3 V) Figure 4. Insertion Loss (S21) vs. Frequency (2.5 V DC Bias, VP = 3.3 V) http://onsemi.com 5 CM1293A APPLICATION INFORMATION Design Considerations In order to realize the maximum protection against ESD pulses, care must be taken in the PCB layout to minimize parasitic series inductances on the Supply/Ground rails as well as the signal trace segment between the signal input (typically a connector) and the ESD protection device. Refer to Figure 5, which illustrates an example of a positive ESD pulse striking an input channel. The parasitic series inductance back to the power supply is represented by L1 and L2. The voltage VCL on the line being protected is: VCL = Fwd voltage drop of D1 + VSUPPLY + L1 x d(IESD) / dt+ L2 x d(IESD) / dt where IESD is the ESD current pulse, and VSUPPLY is the positive supply voltage. An ESD current pulse can rise from zero to its peak value in a very short time. As an example, a level 4 contact discharge per the IEC61000−4−2 standard results in a current pulse that rises from zero to 30 Amps in 1 ns. Here d(IESD)/dt can be approximated by DIESD/Dt, or 30/(1x10−9). So just 10 nH of series inductance (L1 and L2 combined) will lead to a 300 V increment in VCL! Similarly for negative ESD pulses, parasitic series inductance from the VN pin to the ground rail will lead to drastically increased negative voltage on the line being protected. The CM1293 has an integrated Zener diode between VP and VN. This greatly reduces the effect of supply rail inductance L2 on VCL by clamping VP at the breakdown voltage of the Zener diode. However, for the lowest possible VCL, especially when VP is biased at a voltage significantly below the Zener breakdown voltage, it is recommended that a 0.22 μF ceramic chip capacitor be connected between VP and the ground plane. As a general rule, the ESD Protection Array should be located as close as possible to the point of entry of expected electrostatic discharges. The power supply bypass capacitor mentioned above should be as close to the VP pin of the Protection Array as possible, with minimum PCB trace lengths to the power supply, ground planes and between the signal input and the ESD device to minimize stray series inductance. L2 VP ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ D1 0.22 mF D2 ONE CHANNEL POSITIVE SUPPLY RAIL VCC PATH OF ESD CURRENT PULSE IESO LINE BEING PROTECTED L1 CHANNEL INPUT 25 A 0A ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ SYSTEM OR CIRCUITRY BEING PROTECTED VCL GROUND RAIL VN CHASSIS GROUND Figure 5. Application of Positive ESD Pulse between Input Channel and Ground FireWire is a registered trademark of Apple Computer, Inc. i.LINK is a trademark of Sony Corporation. http://onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−143 CASE 318A−06 ISSUE U DATE 07 SEP 2011 SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIM­ UM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO­ TRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, AND GATE BURRS SHALL NOT EXCEED 0.25 PER SIDE. DI­ MENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH AND PROTRUSION SHALL NOT EXCEED 0.25 PER SIDE. 5. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 6. DATUMS A AND B ARE DETERMINED AT DATUM H. e D A GAUGE PLANE E L2 DETAIL A E1 b1 e1 B 3X b 0.20 TOP VIEW A1 H c 0.10 C C SIDE VIEW C A-B D M c A SEATING PLANE L DETAIL A SEATING PLANE END VIEW MILLIMETERS MIN MAX 0.80 1.12 0.01 0.15 0.30 0.51 0.76 0.94 0.08 0.20 2.80 3.05 2.10 2.64 1.20 1.40 1.92 BSC 0.20 BSC 0.35 0.70 0.25 BSC DIM A A1 b b1 c D E E1 e e1 L L2 GENERIC MARKING DIAGRAM* RECOMMENDED SOLDERING FOOTPRINT 1.92 XXX MG G 1 4X 0.75 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 2.70 0.20 3X 0.96 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.54 DIMENSIONS: MILLIMETERS STYLE 1: PIN 1. 2. 3. 4. COLLECTOR EMITTER EMITTER BASE STYLE 2: PIN 1. 2. 3. 4. SOURCE DRAIN GATE 1 GATE 2 STYLE 3: PIN 1. 2. 3. 4. GROUND SOURCE INPUT OUTPUT STYLE 4: PIN 1. 2. 3. 4. STYLE 7: PIN 1. 2. 3. 4. SOURCE GATE DRAIN SOURCE STYLE 8: PIN 1. 2. 3. 4. SOURCE GATE DRAIN N/C STYLE 9: PIN 1. 2. 3. 4. GND IOUT VCC VREF STYLE 10: PIN 1. DRAIN 2. N/C 3. SOURCE 4. GATE DOCUMENT NUMBER: DESCRIPTION: 98ASB42227B SOT−143 OUTPUT GROUND GROUND INPUT STYLE 5: PIN 1. 2. 3. 4. SOURCE DRAIN GATE 1 SOURCE STYLE 6: PIN 1. 2. 3. 4. GND RF IN VREG RF OUT STYLE 11: PIN 1. SOURCE 2. GATE 1 3. GATE 2 4. DRAIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−74 CASE 318F ISSUE P 6 1 SCALE 2:1 DATE 07 OCT 2021 GENERIC MARKING DIAGRAM* XXX MG G XXX M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. ANODE 6. CATHODE STYLE 2: PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE STYLE 3: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 STYLE 4: PIN 1. COLLECTOR 2 2. EMITTER 1/EMITTER 2 3. COLLECTOR 1 4. EMITTER 3 5. BASE 1/BASE 2/COLLECTOR 3 6. BASE 3 STYLE 5: PIN 1. CHANNEL 1 2. ANODE 3. CHANNEL 2 4. CHANNEL 3 5. CATHODE 6. CHANNEL 4 STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 8: PIN 1. EMITTER 1 2. BASE 2 3. COLLECTOR 2 4. EMITTER 2 5. BASE 1 6. COLLECTOR 1 STYLE 9: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 10: PIN 1. ANODE/CATHODE 2. BASE 3. EMITTER 4. COLLECTOR 5. ANODE 6. CATHODE STYLE 11: PIN 1. EMITTER 2. BASE 3. ANODE/CATHODE 4. ANODE 5. CATHODE 6. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: 98ASB42973B SC−74 STYLE 6: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS MSOP10, 3x3 CASE 846AE ISSUE A SCALE 1:1 A 10 E PIN ONE INDICATOR D 6 ÉÉ ÉÉ e 1 F B q E1 L L2 L1 DETAIL A 5 10X TOP VIEW b 0.08 C B M S A S DETAIL A A A1 0.10 C C c END VIEW SEATING PLANE SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* 10X 10X 0.29 0.85 C DATE 20 JUN 2017 NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSIONS: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.10 MM IN EXCESS OF MAXIMUM MATERIAL CONDITION. 4. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 MM PER SIDE. DIMENSION E DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 MM PER SIDE. DIMENSIONS D AND E ARE DETERMINED AT DATUM F. 5. DATUMS A AND B TO BE DETERMINED AT DATUM F. 6. A1 IS DEFINED AS THE VERTICAL DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 0.05 0.15 0.75 0.85 0.95 0.17 −−− 0.27 0.13 −−− 0.23 2.90 3.00 3.10 4.75 4.90 5.05 2.90 3.00 3.10 0.50 BSC 0.40 0.70 0.80 0.95 REF 0.25 BSC 0° −−− 8° DIM A A1 A2 b c D E E1 e L L1 L2 q GENERIC MARKING DIAGRAM* 10 5.35 XXXX AYWG G 1 0.50 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. XXXX A Y W G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present and may be in either location. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON34098E MSOP10, 3X3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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