CPH6341-TL-W

Ordering number : ENA1084B CPH6341 P-Channel Power MOSFET –30V, –5A, 59mΩ, Single CPH6 http://onsemi.com Features • • • • Low ON-resistance High-speed switching 4V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±20 V V Drain Current (DC) ID --5 A Drain Current (Pulse) IDP PW≤10ms, duty cycle≤1% --20 A Allowable Power Dissipation When mounted on ceramic substrate (900mm2×0.8mm) 1.6 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7018A-003 • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel 4 Packing Type: TL Marking 0.9 1 2 0.95 LOT No. YT 0.05 1.6 0.2 0.6 2.8 0.2 0.6 5 CPH6341-TL-E CPH6341-TL-W 0.15 2.9 6 TL 3 0.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Electrical Connection 1, 2, 5, 6 CPH6 3 4 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 January, 2014 11614HK TC-00002818/61312 TKIM/30508PE TIIM No. A1084-1/6 CPH6341 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)2 Input Capacitance RDS(on)1 RDS(on)3 Conditions ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V Ratings min typ Unit max --30 VDS=--10V, ID=--1mA V --1.2 VDS=--10V, ID=--3A 2.8 ID=--3A, VGS=--10V ID=--1.5A, VGS=--4.5V ID=--1.5 A, VGS=--4V Ciss --1 mA ±10 mA --2.6 4.8 V S 45 59 71 100 82 115 mW mW mW 430 pF 105 pF Output Capacitance Coss Reverse Transfer Capacitance Crss 75 pF Turn-ON Delay Time td(on) tr 7.5 ns 26 ns 45 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--5A IS=--5A, VGS=0V 35 ns 10 nC 2.0 nC 2.5 nC --0.87 --1.2 V Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --3A RL=5Ω VIN VOUT D PW=10ms D.C.≤1% G P.G 50Ω CPH6341 S Ordering Information Device CPH6341-TL-E CPH6341-TL-W Package CPH6 Shipping 3,000pcs./reel memo Pb-Free Pb-Free and Halogen Free No. A1084-2/6 CPH6341 ID -- VDS --5 0 0 --0.1 --0.2 --0.3 --0.5 --0.6 --0.7 --0.8 --0.9 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --3.0A 80 60 40 20 0 10 7 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A C 5° -2 =Ta 2 C 5° 7 C 5° 1.0 2 7 5 3 0.1 --0.01 100 Ta= 7 --2.0 --2.5 --3.0 --3.5 --4.0 IT13380 120 .5A = --1 I D , .0V A = --4 --1.5 VGS I D= , V .5 = --4 0A VGS = --3. V, I D 0 1 -= VGS 100 80 60 40 20 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 IS -- VSD VGS=0V 140 160 IT13382 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 2 --1.5 140 --10 7 5 5 3 --1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta 0 --60 --16 IT13381 | yfs | -- ID VDS= --10V --0.5 160 Ta=25°C 120 ID= --1.5A 0 IT13379 140 100 0 --1.0 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A VDD= --15V VGS= --10V 3 5 7 --10 IT13383 SW Time -- ID --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 1000 7 7 5 tf 3 tr 10 7 td(on) 5 --1.2 IT13384 f=1MHz Ciss 5 td(off) 2 3 2 Coss 100 Crss 7 5 3 2 --0.1 --0.01 --0.2 Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.4 Drain-to-Source Voltage, VDS -- V 160 Forward Transfer Admittance, | yfs | -- S --1 VGS= --2.5V --0.5 --2 C --25°C --1.5 25° --2.0 --3 5°C --3.0V --2.5 --4 --25° C --3.0 --1.0 Switching Time, SW Time -- ns Drain Current, ID -- A --3.5 ID -- VGS VDS= --10V Ta=7 5°C 25°C 0V 5V --16.0 --4.0 --6 . --3 --4 . V --10.0V --4.5 Drain Current, ID -- A --6.0 V --4. 5V --5.0 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --10 IT13385 3 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT13386 No. A1084-3/6 CPH6341 VGS -- Qg VDS= --15V ID= --5A --9 3 2 --8 --7 --6 --5 --4 --3 --2 --10 7 5 0 1 2 3 4 5 6 7 Total Gate Charge, Qg -- nC PD -- Ta 2.0 8 9 10 IT13387 ASO IDP= --20A PW≤10ms ID= --5A 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --1 0 Allowable Power Dissipation, PD -- W 5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --10 DC op Operation in this area is limited by RDS(on). 10 10 er 5 7--0.1 2 3 5 7--1.0 s 0m s s ati Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) --0.01 --0.01 2 3 ms 0m 10 1m on 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 7 IT13388 When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13389 No. A1084-4/6 CPH6341 Outline Drawing CPH6341-TL-E, CPH6341-TL-W Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1084-5/6 CPH6341 Note on usage : Since the CPH6341 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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