CSPEMI204FCTAG

CSPEMI204FCTAG

  • 厂商:

    MURATA-PS(村田)

  • 封装:

    WLCSP-5

  • 描述:

    Audio Filter / Reel

  • 数据手册
  • 价格&库存
CSPEMI204FCTAG 数据手册
CSPEMI204 EMI Filter with ESD Protection Product Description The CSPEMI204 is an L−R−C EMI filter array with ESD protection that integrates two Pi−filters (C−L−R−C) to suppress EMI/RFI Noise. CSPEMI204 includes ESD protection diodes on all input/output pins, and provides a very high level of protection for sensitive electronic components against possible electrostatic discharge (ESD). The ESD diodes connected to the filter ports safely dissipate ESD strikes of ±30 kV, which is beyond the maximum requirement of the IEC61000−4−2 international standard. www.onsemi.com WLCSP5 FC SUFFIX CASE 567MA Features • • • • • Two Channels of EMI Filtering ±30 kV ESD Protection (IEC 61000−4−2, Contact Discharge) ±30 kV ESD Protection (IEC 61000−4−2, Air Discharge) Greater than 45 dB of Attenuation at 900 MHz These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Filter#1 A3 C1 Filter#2 C3 GND B1 MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit ESD Discharge IEC61000−4−2 Contact Discharge Air Discharge Vpp RMS Current per Line ILine 350 mA Operating Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Lead Solder Temperature (10 second duration) TL 260 °C 30 30 © Semiconductor Components Industries, LLC, 2015 ATM kV AT M Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. August, 2015 − Rev. 0 A1 GND B1 • Mobile Phones Rating BLOCK DIAGRAM 1 = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† CSPEMI204FCTAG WLCSP5 (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: CSPEMI204/D CSPEMI204 PACKAGE/PINOUT DIAGRAMS Table 1. PIN DESCRIPTIONS Name A1 Filter #1 Filter #1 Input/Output Description C1 Filter #1 Filter #1 Input/Output A3 Filter #2 Filter #2 Input/Output C3 Filter #2 Filter #2 Input/Output B2 GND Top View (Bumps Down View) C B Bottom View (Bumps Up View) Orientation Marking A + Pin + A1 1 AT Device Ground C1 B2 2 3 A3 C3 Max Unit WLCSP5 Package Table 2. ELECTRICAL OPERATING CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol VRWM Test Conditions Min Working Voltage VBR Breakdown Voltage ILEAK Channel Leakage Current RCH Channel Resistance (Pins A1 – A3, C1 – C3) Typ 3.0 IT = 1 mA; (Note 4) V 6.0 V VIN = 3.0 V, GND = 0 V W Ct Line Capacitance VR = 0 V, f = 1 MHz Cut­off Frequency 450 W Source and 10 kW Load Termination 2.0 MHz f3dB Cut­off Frequency 50 W Termination 25 MHz @ 700 MHz @ 900 MHz 40 47 dB Stop Band Attenuation VESD In­system ESD Withstand Voltage a) Contact discharge per IEC 61000­4­2 standard, Level 4 (External Pins) b) Contact discharge per IEC 61000­4­2 standard, Level 1 (Internal Pins) VCL TLP Clamping Voltage 250 nA 3.0 f3dB Fatten 185 400 (Notes 1 and 2) 315 pF kV ±30 ±30 Forward IPP = 8 A Forward IPP = 16 A Forward IPP = ±8 A Forward IPP = ±16 A 9.8 11.5 −9.7 −11.7 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Standard IEC61000−4−2 with CDischarge = 150 pF, RDischarge = 330, GND grounded. 2. These measurements performed with no external capacitor. 3. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 4. VBR is measured at pulse test current IT. www.onsemi.com 2 CSPEMI204 PERFORMANCE INFORMATION Typical Filter Performance 0 0 −10 −10 −20 −30 S21 (dB) −30 −40 −40 −50 −60 −70 −80 −50 −90 −60 1.E+05 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 −100 1.E+05 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+11 FREQUENCY (Hz) FREQUENCY (Hz) Figure 1. Typical Insertion Loss (50 W Termination) Figure 3. Typical Insertion Loss (450 W Source and 10 kW Load Termination) −80 −85 −90 THD+N (dB) S21 (dB) −20 −95 −100 −105 −110 −115 −120 20 200 2000 FREQUENCY (Hz) Figure 2. Typical THD+N at 1.8 Vpp www.onsemi.com 3 20000 CSPEMI204 IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 4. IEC61000−4−2 Spec ESD Gun Oscilloscope TVS 50 W Cable 50 W Figure 5. Diagram of ESD Clamping Voltage Test Setup The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices. systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger www.onsemi.com 4 25 −25 20 −20 TLP CURRENT (A) TLP CURRENT (A) CSPEMI204 15 10 −15 −10 −5 5 0 0 0 NOTE: 2 4 6 8 10 12 14 0 −2 −4 −6 −8 −10 −12 −14 VC, VOLTAGE (V) VC, VOLTAGE (V) Figure 6. Positive TLP I−V Curve (Preliminary) Figure 7. Negative TLP I−V Curve (Preliminary) TLP parameter: Z0 = 50 W, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns. VIEC is the equivalent voltage stress level calculated at the secondary peak of the IEC 61000−4−2 waveform at t = 30 ns with 2 A/kV. See TLP description below for more information. Transmission Line Pulse (TLP) Measurement L Transmission Line Pulse (TLP) provides current versus voltage (I−V) curves in which each data point is obtained from a 100 ns long rectangular pulse from a charged transmission line. A simplified schematic of a typical TLP system is shown in Figure 8. TLP I−V curves of ESD protection devices accurately demonstrate the product’s ESD capability because the 10s of amps current levels and under 100 ns time scale match those of an ESD event. This is illustrated in Figure 9 where an 8 kV IEC 61000−4−2 current waveform is compared with TLP current pulses at 8 A and 16 A. A TLP I−V curve shows the voltage at which the device turns on as well as how well the device clamps voltage over a range of current levels. S Attenuator ÷ 50 W Coax Cable 10 MW IM 50 W Coax Cable VM DUT VC Oscilloscope Figure 8. Simplified Schematic of a Typical TLP System Figure 9. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP5, 1.26x0.89 CASE 567MA ISSUE O SCALE 4:1 PIN A1 REFERENCE 2X E A ÈÈ ÈÈ DATE 07 JUL 2015 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. 4. DIMENSION b IS MEASURED AT THE MAXIMUM BALL DIAMETER PARALLEL TO DATUM C. B D 0.10 C 2X 0.10 C DIM A A1 A2 b D E e e1 TOP VIEW A2 0.10 C A GENERIC MARKING DIAGRAM* 0.05 C NOTE 3 A1 C SIDE VIEW e b 0.10 C A B 0.05 C SEATING PLANE XXM e/2 5X MILLIMETERS MIN MAX −−− 0.50 0.18 0.22 0.255 REF 0.235 0.295 1.26 BSC 0.89 BSC 0.50 BSC 0.435 BSC e1 C B A 1 2 3 BOTTOM VIEW XX = Specific Device Code M = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. RECOMMENDED SOLDERING FOOTPRINT* A1 PACKAGE OUTLINE 5X 0.87 PITCH 0.27 0.50 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON00069G WLCSP5, 1.26X0.89 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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