DAP222M3T5G

Common Anode Silicon Dual Switching Diodes DAP222M3T5G These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The DAP222 device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium. Features • • • • www.onsemi.com Fast trr Low CD Available in 4 mm Tape and Reel This is a Pb−Free Device ANODE 3 MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit VR 80 V VRM 80 V IF 100 mA Symbol Max Unit PD 260 mW Reverse Voltage Peak Reverse Voltage Forward Current Power Dissipation MARKING DIAGRAM 3 THERMAL CHARACTERISTICS Rating 1 2 CATHODE Junction Temperature TJ 150 °C Storage Temperature Tstg −55 ~ + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. t = 1.0 mS. 2 SOT−723 CASE 631AA STYLE 4 P9 M Rating 1 P9 M = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† DAP222M3T5G SOT−723 (Pb−Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 April, 2021 − Rev. 5 1 Publication Order Number: DAP222M3/D DAP222M3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 70 V − 0.1 mA Forward Voltage VF IF = 100 mA − 1.2 V Reverse Breakdown Voltage VR IR = 100 mA 80 − V Diode Capacitance CD VR = 6.0 V, f = 1.0 MHz − 3.5 pF trr (Note 2) IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR − 4.0 ns Reverse Recovery Time 2. trr Test Circuit for DAP222 in Figure 4. TYPICAL ELECTRICAL CHARACTERISTICS 150°C 10 125°C 25°C 1.0 IR, REVERSE CURRENT (mA) 100 −40°C −55°C 0.1 0.01 150°C 10 125°C 1.0 85°C 0.1 55°C 0.01 25°C 0.001 0.1 0.2 0.5 0.6 0.7 0.8 0.3 0.4 VF, FORWARD VOLTAGE (V) 0.9 0.0001 1.0 0 10 Figure 1. Forward Voltage 40 50 60 20 30 VR, REVERSE VOLTAGE (V) Figure 2. Reverse Current 1.4 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 5.0 10 15 20 VR, REVERSE VOLTAGE (V) Figure 3. Diode Capacitance www.onsemi.com 2 25 70 80 DAP222M3T5G 0.1 mF Pulse Generator DUT 510 + IF 100 50 W Scope RECOVERY TIME EQUIVALENT TEST CIRCUIT tr tp trr IF t t 10% Irr = 0.1 IR 90% VR IF = 5.0 mA VR = 6 V RL = 100 W tp = 100 ns tr = 0.4 ns f = 5 kHz VR = 6 V INPUT PULSE OUTPUT PULSE Figure 4. Reverse Recovery Time Test Circuit www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE D DATE 10 AUG 2009 SCALE 4:1 −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y 3X 1 3X DIM A b b1 C D E e HE L L2 SIDE VIEW TOP VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. L GENERIC MARKING DIAGRAM* L2 BOTTOM VIEW STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M 1 XX M RECOMMENDED SOLDERING FOOTPRINT* = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 2X 0.40 2X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON12989D SOT−723 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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