DTA114EET1 Series,
SDTA114EET1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−75/SOT−416 package which is designed for low power
surface mount applications.
http://onsemi.com
PNP SILICON BIAS
RESISTOR TRANSISTORS
SC−75 (SOT−416)
CASE 463
STYLE 1
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC−75/SOT−416 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAM
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Collector Current
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
xx M G
G
xx
M
G
= Specific Device Code
xx = (Refer to page 4)
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 7
1
Publication Order Number:
DTA114EET1/D
DTA114EET1 Series, SDTA114EET1 Series
THERMAL CHARACTERISTICS
Rating
Symbol
Total Device Dissipation, FR−4 Board (Note 1)
@ TA = 25C
Derate above 25C
PD
Thermal Resistance,
Junction−to−Ambient (Note 1)
RqJA
Total Device Dissipation,
FR−4 Board (Note 2) @ TA = 25C
Derate above 25C
Unit
200
1.6
mW
mW/C
C/W
600
PD
300
2.4
mW
mW/C
RqJA
400
C/W
TJ, Tstg
−55 to +150
C
Thermal Resistance, Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range
Value
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 1.0 Inch Pad.
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1, SDTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
IEBO
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
OFF CHARACTERISTICS
mAdc
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
50
−
−
50
−
−
Min
Typ
Max
Vdc
Vdc
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Unit
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1, SDTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
hFE
−
35
60
80
80
160
160
8.0
15
80
80
80
80
80
http://onsemi.com
2
60
100
140
140
250
250
15
27
140
130
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
DTA114EET1 Series, SDTA114EET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
ON CHARACTERISTICS (Note 4)
Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
DTA123EET1
(IC = 10 mA, IB = 1 mA)
DTA114TET1/DTA143TET1
DTA143ZET1/DTA124XET1
DTA143EET1
VCE(sat)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
DTA114EET1
DTA124EET1
DTA114YET1, SDTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
DTA144EET1
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
DTA115EET1
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
DTA144WET1
−
−
0.25
VOL
Vdc
Vdc
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
−
0.2
−
−
0.2
−
−
0.2
Symbol
Min
Typ
Max
Unit
VOH
4.9
−
−
Vdc
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
−
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
−
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
−
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (continued)
Characteristic
ON CHARACTERISTICS (Note 6)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
Input Resistor
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1, SDTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
R1
Resistor Ratio
DTA114EET1/DTA124EET1
DTA144EET1/DTA115EET1
DTA114YET1, SDTA114YET1
DTA114TET1/DTA143TET1
DTA123EET1/DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA144WET1
R1/R2
6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
http://onsemi.com
3
kW
−
DTA114EET1 Series, SDTA114EET1 Series
ORDERING INFORMATION AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
6A
10
10
6B
22
22
DTA114EET1
DTA114EET1G
DTA124EET1
DTA124EET1G
DTA144EET1
DTA144EET1G
6C
47
47
DTA114YET1
DTA114YET1G
6D
10
47
SDTA114YET1G
DTA114TET1
DTA114TET1G
6E
10
6F
4.7
6H
2.2
2.2
43
4.7
4.7
6K
4.7
47
6L
22
47
DTA143TET1
DTA143TET1G
DTA123EET1
DTA123EET1G
DTA143EET1
DTA143EET1G
DTA143ZET1
DTA143ZET1G
DTA124XET1
DTA124XET1G
DTA123JET1
DTA123JET1G
6M
2.2
47
DTA115EET1
DTA115EET1G
6N
100
100
DTA144WET1
DTA144WET1G
6P
47
22
Package
Shipping†
SC−75
3,000 Tape & Reel
SC−75
(Pb−Free)
3,000 Tape & Reel
SC−75
3,000 Tape & Reel
SC−75
(Pb−Free)
3,000 Tape & Reel
SC−75
3,000 Tape & Reel
SC−75
(Pb−Free)
3,000 Tape & Reel
SC−75
3,000 Tape & Reel
SC−75
(Pb−Free)
3,000 Tape & Reel
SC−75
(Pb−Free)
3,000 Tape & Reel
SC−75
3,000 Tape & Reel
SC−75
(Pb−Free)
3,000 Tape & Reel
SC−75
3,000 Tape & Reel
SC−75
(Pb−Free)
3,000 Tape & Reel
SC−75
3,000 Tape & Reel
SC−75
(Pb−Free)
3,000 Tape & Reel
SC−75
3,000 Tape & Reel
SC−75
(Pb−Free)
3,000 Tape & Reel
SC−75
3,000 Tape & Reel
SC−75
(Pb−Free)
3,000 Tape & Reel
SC−75
3,000 Tape & Reel
SC−75
(Pb−Free)
3,000 Tape & Reel
SC−75
3,000 Tape & Reel
SC−75
(Pb−Free)
3,000 Tape & Reel
SC−75
3,000 Tape & Reel
SC−75
(Pb−Free)
3,000 Tape & Reel
SC−75
3,000 Tape & Reel
SC−75
(Pb−Free)
3,000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
4
DTA114EET1 Series, SDTA114EET1 Series
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
RqJA = 600C/W
50
0
-50
0
50
100
TA, AMBIENT TEMPERATURE (C)
150
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
Figure 1. Derating Curve
1.0
D = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
Figure 2. Normalized Thermal Response
http://onsemi.com
5
10
100
1000
DTA114EET1 Series, SDTA114EET1 Series
1000
1
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EET1
IC/IB = 10
TA=-25C
0.1
25C
75C
0.01
0
20
25C
100
-25C
IC, COLLECTOR CURRENT (mA)
10
IC, COLLECTOR CURRENT (mA)
Figure 3. VCE(sat) versus IC
Figure 4. DC Current Gain
50
1
100
IC, COLLECTOR CURRENT (mA)
3
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=-25C
10
1
0.1
0.01
0.001
50
VO = 5 V
0
Figure 5. Output Capacitance
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25C
10
25C
75C
1
0
10
8
9
Figure 6. Output Current versus Input Voltage
100
0.1
100
25C
75C
f = 1 MHz
lE = 0 V
TA = 25C
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
TA=75C
10
40
4
0
VCE = 10 V
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 7. Input Voltage versus Output Current
http://onsemi.com
6
10
DTA114EET1 Series, SDTA114EET1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTA123EET1
75C
0.1
−25C
25C
0.01
0.001
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
100
75C
10
1
30
TA = −25C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 8. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
lE = 0 V
TA = 25C
10
8
6
4
2
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
10 75C
25C
1
TA = −25C
0.1
0.01
0.001
50
Figure 10. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25C
1
75C
25C
VO = 0.2 V
0.1
0
9
10
Figure 11. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 9. DC Current Gain
12
0
25C
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 12. Input Voltage versus Output Current
http://onsemi.com
7
25
DTA114EET1 Series, SDTA114EET1 Series
1000
10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTA124EET1
IC/IB = 10
1
25C
TA=-25C
75C
0.1
0.01
VCE = 10 V
TA=75C
25C
-25C
100
10
0
40
20
IC, COLLECTOR CURRENT (mA)
10
1
50
Figure 13. VCE(sat) versus IC
Figure 14. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
3
2
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
25C
75C
f = 1 MHz
lE = 0 V
TA = 25C
TA=-25C
10
1
0.1
0.01
0.001
50
Figure 15. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25C
10
25C
75C
1
0.1
0
10
8
9
Figure 16. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
0
100
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 17. Input Voltage versus Output Current
http://onsemi.com
8
10
DTA114EET1 Series, SDTA114EET1 Series
1
1000
IC/IB = 10
TA=-25C
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTA144EET1
25C
75C
0.1
0.01
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75C
25C
-25C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 18. VCE(sat) versus IC
Figure 19. DC Current Gain
1
100
0.6
0.4
0.2
0
0
-25C
1
0.1
0.01
Figure 20. Output Capacitance
VO = 5 V
1
0
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25C
25C
75C
1
0.1
0
10
8
9
Figure 21. Output Current versus Input Voltage
100
10
25C
TA=75C
10
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25C
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 22. Input Voltage versus Output Current
http://onsemi.com
9
10
DTA114EET1 Series, SDTA114EET1 Series
180
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114YET1, SDTA114YET1
TA=-25C
25C
0.1
75C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25C
140
-25C
120
100
80
60
40
20
0
80
TA=75C
VCE = 10 V
160
2
1
4
6
Figure 23. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
3.5
Cob , CAPACITANCE (pF)
TA=75C
f = 1 MHz
lE = 0 V
TA = 25C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
25C
-25C
10
VO = 5 V
1
50
Figure 25. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 26. Output Current versus Input Voltage
+12 V
10
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
80 90 100
Figure 24. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
25C
TA=-25C
75C
Typical Application
for PNP BRTs
1
LOAD
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 27. Input Voltage versus Output Current
Figure 28. Inexpensive, Unregulated Current Source
http://onsemi.com
10
DTA114EET1 Series, SDTA114EET1 Series
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
0.1
0.01
75C
25C
−25C
IC/IB = 10
0
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
7
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — DTA115EET1
1000
75C
TA = −25C
100
10
VCE = 10 V
1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 29. Maximum Collector Voltage versus
Collector Current
100
IC, COLLECTOR CURRENT (mA)
1.0
f = 1 MHz
IE = 0 V
TA = 25C
0.8
0.6
0.4
0.2
0
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
25C
TA = −25C
1
VO = 5 V
0
1
2
3
4
TA = −25C
VO = 0.2 V
75C
0
2
6
7
8
9
10
Figure 32. Output Current versus Input Voltage
10
1
5
Vin, INPUT VOLTAGE (VOLTS)
100
25C
75C
10
0.1
60
Figure 31. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 30. DC Current Gain
1.2
0
25C
4
6
8
10 12
14
16
IC, COLLECTOR CURRENT (mA)
18
Figure 33. Input Voltage versus Output Current
http://onsemi.com
11
20
DTA114EET1 Series, SDTA114EET1 Series
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
TA = −25C
75C
0.1
25C
0.01
IC/IB = 10
0
5
10 15
20 25 30 35 40
IC, COLLECTOR CURRENT (mA)
45
50
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — DTA144WET1
1000
75C
TA = −25C
100
25C
VCE = 10 V
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 34. Maximum Collector Voltage versus
Collector Current
Figure 35. DC Current Gain
100
1.0
IC, COLLECTOR CURRENT (mA)
1.2
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
75C
TA = −25C
10
25C
1
0.1
0.01
0.001
60
VO = 5 V
0
1
2
3
4
VO = 0.2 V
1
TA = −25C
75C
25C
0
6
7
8
9
10
11
Figure 37. Output Current versus Input Voltage
100
10
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 36. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.4
f = 1 MHz
IE = 0 V
TA = 25C
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
25
Figure 38. Input Voltage versus Output Current
http://onsemi.com
12
DTA114EET1 Series, SDTA114EET1 Series
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
−E−
2
3
b 3 PL
0.20 (0.008)
e
−D−
DIM
A
A1
b
C
D
E
e
L
HE
1
M
D
HE
C
0.20 (0.008) E
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
13
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
DTA114EET1/D