ESD7571N2T5G

ESD Protection Diode Micro−Packaged Diodes for ESD Protection ESD7571, SZESD7571 The ESD7571 is designed to protect voltage sensitive components that require ultra-low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, high breakdown voltage, high linearity, low leakage, and fast response time make these parts ideal for ESD protection on designs where board space is at a premium. It has industry leading capacitance linearity over voltage making it ideal for RF applications. This capacitance linearity combined with the extremely small package and low insertion loss makes this part well suited for use in antenna line applications for wireless handsets and terminals. www.onsemi.com MARKING DIAGRAM Features • • • • • • • • • • Industry Leading Capacitance Linearity Over Voltage Ultra−Low Capacitance: 0.35 pF Max Stand−off Voltage: 5.3 V Low Leakage: < 1 nA Low Dynamic Resistance: < 1 W IEC61000−4−2 Level 4 ESD Protection 1000 ESD IEC61000−4−2 Strikes ±8 kV Contact / Air Discharged SZESD7571MXWT5G − Wettable Flank Package for Optimal Automated Optical Inspection (AOI) SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • • • • MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit IEC 61000−4−2 Contact (ESD) (Note 1) IEC 61000−4−2 Air (ESD) (Note 1) ESD ESD ±20 ±20 KV kV IEC 61000−4−5 (ESD) (Note 2) ESD 2.2 A Total Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction−to−Ambient °PD° RqJA 300 400 mW °C/W TJ, Tstg −55 to +150 °C TL 260 °C Junction and Storage Temperature Range Lead Solder Temperature − Maximum (10 Second Duration) D M DM = Specific Device Code = Date Code X2DFNW2 CASE 711BG J M JM = Specific Device Code = Date Code ORDERING INFORMATION Package Shipping† ESD7571N2T5G X2DFN2 (Pb−Free) 8000 / Tape & Reel SZESD7571N2T5G X2DFN2 (Pb−Free) 8000 / Tape & Reel SZESD7571MXWT5G X2DFNW2 (Pb−Free) 8000 / Tape & Reel Device RF Signal ESD Protection RF Switching, PA, and Antenna ESD Protection Near Field Communications USB 2.0, USB 3.0 Rating X2DFN2 CASE 714AB †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. At least 10 discharges at TA = 25°C, per IEC61000−4−2 waveform. 2. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform. 3. Mounted with recommended minimum pad size, DC board FR−4 © Semiconductor Components Industries, LLC, 2016 April, 2020 − Rev. 3 1 Publication Order Number: ESD7571/D ESD7571, SZESD7571 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) IPP Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IT VC VBR VRWM IR IR VRWM VBR VC IT Working Peak Reverse Voltage IR I V Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT IPP Test Current Bi−Directional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Reverse Working Voltage Condition Min Typ VRWM Breakdown Voltage VBR IT = 1 mA (Note 4) Max Unit 5.3 V 7.0 V Reverse Leakage Current IR VRWM = 5.3 V