ESDM1031
3.3V ESD Protection Diodes
Micro−packaged Diodes for ESD
Protection
The ESDM1031 is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, and fast
response time provide best in class protection on designs that are
exposed to ESD. Because of its small size, it is suited for use in
smartphone, smart−watch, or many other portable / wearable
applications where board space comes at a premium.
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X4DFN2 (01005)
CASE 718AA
Features
• Low Capacitance (30 pF Typ, I/O to GND)
• Small Body Outline Dimensions − 01005 Size: 0.445 x 0.24 mm
• Protection for the Following IEC Standards:
•
•
MARKING DIAGRAM
KM
IEC 61000−4−2 (Level 4)
Low ESD Clamping Voltage
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
K = Device Code
M = Date Code
PIN CONFIGURATION
AND SCHEMATIC
Applications
• Audio Line Protection
• SIM Card Protection
• GPIO Protection
1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Operating Junction Temperature Range
TJ
−55 to +150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Lead Solder Temperature −
Maximum (10 Seconds)
TL
260
°C
±30
±30
kV
kV
ESDM1031:
IEC 61000−4−2 Contact
IEC 61000−4−2 Air
ESD
2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of
survivability specs.
© Semiconductor Components Industries, LLC, 2016
May, 2019 − Rev. 0
1
Publication Order Number:
ESDM1031/D
ESDM1031
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
VRWM
VBR
Conditions
Min
Typ
Max
Unit
3.3
V
5.2
6.3
V
0.005
0.5
mA
I/O Pin to GND
IT = 1 mA, I/O Pin to GND
4.6
Reverse Leakage Current
IR
VRWM = 3.3 V, I/O Pin to GND
Reverse Peak Pulse Current
IPP
IEC61000−4−5 (8x20 ms)
Clamping Voltage
VC
IPP = 12 A, (8/20 ms pulse)
8.6
Clamping Voltage
TLP (Note 1)
VC
IPP = 8 A
IEC 61000−4−2 Level 2 equivalent
(±4 kV Contact, ±8 kV Air)
7.4
IPP = 16 A
IEC 61000−4−2 Level 2 equivalent
(±8 kV Contact, ±16 kV Air)
9.1
Dynamic Resistance
RDYN
Junction Capacitance
CJ
I/O Pin to GND, 100 ns TLP
VR = 0 V, f = 1 MHz
12
14
A
9.6
V
0.21
30
V
W
33
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 1 ns, averaging window; t1 = 70 ns to t2 = 90 ns.
ORDERING INFORMATION
Device
ESDM1031MX4T5G
Package
Shipping†
X4DFN2
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
ESDM1031
30
10
25
5
20
0
15
−5
Voltage (V)
10
5
−10
−15
0
−20
−5
−25
−10
−20
0
20
40
60
80
100
120
−30
−20
140
0
20
40
Time (ns)
80
100
120
140
Figure 2. ESD Clamping Voltage
Negative 8 kV Contact per IEC61000−4−2
10
20
10
18
9
18
9
16
8
16
8
14
7
14
7
12
6
12
6
10
5
10
5
8
4
8
4
6
3
6
3
4
2
4
2
2
1
2
1
0
0
7 8 9 10 11 12 13 14 15 16
0
0
1
2
3 4
5
6
ITLP (A)
20
VIEC Eq (kV)
ITLP (A)
Figure 1. ESD Clamping Voltage
Positive 8 kV Contact per IEC61000−4−2
0 1
VCTLP (V)
5
6
7 8
0
9 10 11 12 13 14 15 16
Figure 4. Negative TLP I−V Curve
12
VC @ IPK (A)
11
10
9
8
7
6
5
4
3
2
1
0
2 3 4
VCTLP (V)
Figure 3. Positive TLP I−V Curve
VC @ IPK (A)
60
Time (ns)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
12
11
10
9
8
7
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
IPK (A)
IPK (A)
Figure 5. Positive Clamping Voltage vs. Peak
Pulse Current (tp = 8/20 ms)
Figure 6. Negative Clamping Voltage vs. Peak
Pulse Current (tp = 8/20 ms)
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3
VIEC Eq (kV)
Voltage (V)
TYPICAL CHARACTERISTICS
ESDM1031
TYPICAL CHARACTERISTICS
1E−03
1E−03
1E−04
1E−04
1E−05
1E−05
1E−06
IR (A)
1E−07
1E−07
1E−08
1E−11
1E−10
1E−11
1E−08
1E−09
1E−10
1E−09
1E−12
−6 −5 −4 −3 −2 −1
0
1
2
3
4
5
1E−13
−8 −7 −6 −5 −4 −3 −2 −1 0 1 2 3 4 5 6
VR (V)
6
VR (V)
Figure 7. Breakdown Voltage
Figure 8. Reverse Leakage Current
0.0
−0.2
−0.4
−0.6
S(2,1) Magnitude (dB)
IR (A)
1E−06
−0.8
−1.0
−1.2
−1.4
−1.6
−1.8
−2.0
−2.2
−2.4
−2.6
−2.8
−3.0
1.0E+06
1.0E+07
1.0E+08
Frequency (Hz)
Figure 9. Magnitude vs. Frequency
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4
1.0E+09
7 8
ESDM1031
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
Ipeak
Level
Test
Voltage
(kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1
2
7.5
4
2
2
4
15
8
4
3
6
22.5
12
6
4
8
30
16
8
100%
90%
I @ 30 ns
I @ 60 ns
10%
tP = 0.7 ns to 1 ns
Figure 10. IEC61000−4−2 Spec
Transmission Line Pulse (TLP) Measurement
L
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 11. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 12 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
50 W Coax
Cable
S Attenuator
÷
50 W Coax
Cable
10 MW
IM
VM
DUT
VC
Oscilloscope
Figure 11. Simplified Schematic of a Typical TLP
System
Figure 12. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
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5
ESDM1031
PACKAGE DIMENSIONS
X4DFN2, 0.445x0.24, 0.27P
CASE 718AA
ISSUE A
A
B
D
Ç
PIN 1
REFERENCE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
DIM
A
A1
b
D
E
e
L
E
TOP VIEW
A
0.03 C
0.03 C
A1
SIDE VIEW
C
SEATING
PLANE
RECOMMENDED
MOUNTING FOOTPRINT*
e
e/2
2
2X
b
0.27
PITCH
PIN 1
2X
L
MILLIMETERS
MIN
NOM MAX
0.15
0.18
0.21
−−−
−−−
0.03
0.170 0.185 0.200
0.415 0.445 0.475
0.210 0.240 0.270
0.270 BSC
0.105 0.120 0.135
0.10 C A B
0.05 C
2X
0.21
1
NOTE 3
BOTTOM VIEW
2X
0.13
DIMENSIONS: MILLIMETERS
See Application Note AND8398/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
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ESDM1031/D
