ESDONCAN1LT3G

ESDONCAN1, SESDONCAN1 CAN/CAN-FD Bus Protector Low Capacitance ESD Protection Diode for CAN/CAN−FD Bus The S/ESDONCAN1 has been designed to protect the CAN transceiver from ESD and other harmful transient voltage events. This device provides bidirectional protection for each data line with a single compact SOT−23 package, giving the system designer a low cost option for improving system reliability and meeting stringent EMI requirements. Features • • • • • • • • • • 200 W Peak Power Dissipation per Line (8 x 20 msec Waveform) Diode Capacitance Matching Low Reverse Leakage Current (< 100 nA) Low Capacitance High−Speed FlexRay Data Rates IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lighting) 3.0 A (8/20 ms) ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A (1 x 50 ms) ISO 7637−3, Repetitive Electrical Fast Transient (EFT) EMI Surge Pulses, 50 A (5 x 50 ns) Flammability Rating UL 94 V−0 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices www.onsemi.com SOT−23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 200 W PEAK POWER SOT−23 CASE 318 STYLE 27 PIN 1 PIN 3 PIN 2 MARKING DIAGRAM 25EMG G Typical Applications 1 • Industrial Smart Distribution Systems (SDS) DeviceNet Automotive ♦ Controlled Area Network − CAN 2.1 / CAN FD ♦ Low and High Speed CAN ♦ • 25E M G ♦ = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 October, 2017 − Rev. 2 1 Publication Order Number: ESDONCAN1/D ESDONCAN1, SESDONCAN1 MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) Symbol PPK Rating Peak Power Dissipation, 8 x 20 ms Double Exponential Waveform (Note 1) Value Unit 200 W TJ Operating Junction Temperature Range −55 to 150 °C TJ Storage Temperature Range −55 to 150 °C TL Lead Solder Temperature (10 s) 260 °C Human Body Model (HBM) Machine Model (MM) IEC 61000−4−2 Specification (Contact) 8.0 400 23 kV V kV ESD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Symbol VRWM VBR Parameter Test Conditions Reverse Working Voltage (Note 2) Breakdown Voltage IT = 1 mA (Note 3) Min Typ Max Unit 24 − − V 26.2 − 32 V IR Reverse Leakage Current VRWM = 24 V − 15 100 nA VC Clamping Voltage IPP = 1 A (8 x 20 ms Waveform) (Note 4) − 33.4 36.6 V VC Clamping Voltage IPP = 3 A (8 x 20 ms Waveform) (Note 4) − 44 50 V IPP Maximum Peak Pulse Current 8 x 20 ms Waveform (Note 4) − − 3.0 A CJ Capacitance VR = 0 V, f = 1 MHz (Line to GND) − − 10 pF DC Diode Capacitance Matching VR = 0 V, 5 MHz (Note 5) − 0.26 2 % Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Pulse waveform per Figure 1. 5. DC is the percentage difference between CJ of lines 1 and 2 measured according to the test conditions given in the electrical characteristics table. ORDERING INFORMATION Package Shipping† ESDONCAN1LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SESDONCAN1LT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel ESDONCAN1LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SESDONCAN1LT3G* SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 2 ESDONCAN1, SESDONCAN1 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) % OF PEAK PULSE CURRENT WAVEFORM PARAMETERS tr = 8 ms td = 20 ms 90 80 c−t 70 IPP, PEAK PULSE CURRENT (A) 3.5 110 100 60 td = IPP/2 50 40 30 20 10 0 0 10 5 20 15 2.5 2.0 1.5 1.0 0.5 0.0 30 30 25 3.0 35 Figure 2. Clamping Voltage vs Peak Pulse Current Figure 1. Pulse Waveform, 8 × 20 ms 50 9 45 40 125°C 7 35 25°C 6 IT, (mA) C, CAPACITANCE (pF) 8 5 30 25 20 15 4 25°C 10 3 0 10 5 15 20 0 20 25 TA = −55°C 22 24 26 28 30 32 34 VBR, VOLTAGE (V) Figure 4. VBR versus IT Characteristics Figure 3. Typical Junction Capacitance vs Reverse Voltage 120 25 −55°C +25°C TA = +150°C 100 PERCENT DERATING (%) 20 15 10 5 0 65°C 125°C 5 VR, REVERSE VOLTAGE (V) VR, REVERSE BIAS VOLTAGE (V) 50 VC, CLAMPING VOLTAGE (V) t, TIME (ms) 2 45 40 0 1 2 3 IL, LEAKAGE CURRENT (nA) 4 80 60 40 20 0 −60 5 Figure 5. IR versus Temperature Characteristics −30 0 30 60 90 TEMPERATURE (°C) 120 150 180 Figure 6. Temperature Power Dissipation Derating www.onsemi.com 3 ESDONCAN1, SESDONCAN1 APPLICATIONS Background communication lines. The ESDONCAN1 is a low capacitance dual bidirectional surge protection device in a compact SOT-23 package especially suitable for CAN2.1 (CAN-FD). This device is based on Zener technology that optimizes the active area of a PN junction to provide robust protection against transient EMI surge voltage and ESD. The ESDONCAN1 has been tested to EMI and ESD levels that exceed the specifications of popular high speed CAN networks. The Controller Area Network (CAN) is a serial communication protocol designed for providing reliable high speed data transmission in harsh environments. Surge protection diodes provide a low cost solution to conducted and radiated Electromagnetic Interference (EMI) and Electrostatic Discharge (ESD) noise problems. The noise immunity level and reliability of CAN transceivers can be easily increased by adding external surge protection diodes to prevent transient voltage failures. The ESDONCAN1 provides a surge protection solution for CAN data Honeywell and SDS are registered trademarks of Honeywell International Inc. DeviceNet is a trademark of Rockwell Automation. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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