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FAM65V05DF1
Auto SPM® Series
Automotive 3-Phase IGBT Smart Power Module
Features
General Description
®
®
27 pin Auto SPM module
650 V-50 A 3-phase IGBT module with low loss IGBTs
and soft recovery diodes optimized for motor control
applications
Integrated gate drivers with Internal VS connection, Under
Voltage lockout, Over-current shutdown, Temperature
Sensing Unit and Fault reporting
Electrically isolated AlN substrate with low Rthjc
Module serialization for full traceability
Pb-Free and RoHS compliant
UL Certified No. E209204 (UL 1557)
Automotive qualified
FAM65V05DF1 is an advanced Auto SPM
module providing a fully-featured highperformance auxiliary inverter output stage for
hybrid and electric vehicles. These modules
integrate optimized gate drive of the built-in
IGBTs to minimize EMI and losses, while also
providing various protection features, in a
2
compact 12cm footprint.
Applications Note
AN-8422`
–
®
650 V Auto SPM
Series;
Automotive 3-Phase IGBT Smart Power Module
User’s Guide
Applications and Benefits
Automotive high voltage auxiliary motors such as air
conditioning compressor and oil pump
Compact design
Simplified PCB layout and low EMI
Simplified Assembly
High reliability
Top View
Bottom View
Figure 1. Package view
Ordering Information
Part Number
Marking
Package
Packing Method
Qty. per tube
Qty. per box
FAM65V05DF1
FAM65V05DF1
APM27-CAA
Tube
10
60
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
www.onsemi.com
www.fairchildsemi.com
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
October 2016
Figure 2. Pin configuration
Pin Description
Pin Number
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
VCC(L)
COM
IN (UL)
IN (VL)
IN (WL)
VFO
VTS
CSC
IN (UH)
VCC(H)
VB(U)
VS(U)
IN(VH)
VCC(H)
VB(V)
VS(V)
IN(WH)
VCC(H)
VB(W)
VS(W)
NU
NV
NW
U
V
W
P
Pin Function Description
Low-side Common Bias Voltage for IC and IGBTs Driving
Common Supply Ground
Signal Input for Low-side U Phase
Signal Input for Low-side V Phase
Signal Input for Low-side W Phase
Fault Output
Output for LVIC temperature sense
Capacitor (Low-pass Filter) for Short-Current Detection Input
Signal Input for High-side U Phase
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Signal Input for High-side V Phase
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-side W Phase
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Negative DC–Link Input for W Phase
Output for U Phase
Output for V Phase
Output for W Phase
Positive DC–Link Input
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
www.onsemi.com
www.fairchildsemi.com
2
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
Pin Configuration
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
Internal Equivalent Circuit and Input/Output Pins
Figure 3. Schematic
Gate drivers block diagram
High side gate driver (x3 single channel):
Control circuit under-voltage (UV) protection
3.3/5 V CMOS/LSTTL compatible, Schmitt trigger input
High-Side Region
AS7107X
VB
UVLO
R
VCC
Noise
Canceller
25V
R
Common
Mode
Noise
Canceller
Noise
Filter
RRS-Latch
XOR
Common
Mode
Q
S
HO
25V
VS
25V
Input
Filter
HIN
Pre
Driver
Short-pulse
Generator
5KΩ
COM
Figure 4. High Side gate drivers (block diagram)
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
www.onsemi.com
www.fairchildsemi.com
3
Control circuit under-voltage (UV) protection
Short circuit protection (SC)
Temperature sensing unit
Fault Output
3.3/5 V CMOS/LSTTL compatible, Schmitt trigger input
U-Phase
LINU
LOU
V-Phase
LINV
LOV
W-Phase
VDD
Input Filter
LINW
Matching delay
restart
Pre
Driver
LOW
5KΩ
80mA
TSD
TSU
TSU
(Temperature Sensing Unit)
CSC
FO
UVLO
Timer
Filter
CSC filter
0.5V
VCC
COM
25V
AS4743X
Figure 5. Low Side gate drivers (block diagram)
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
www.onsemi.com
www.fairchildsemi.com
4
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
Low side gate driver (x1 monolithic three-channel):
Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device
reliability.
Inverter Part
Symbol
Parameter
VPN
Condition
Supply Voltage (surge)
± IC
Collector-emitter Voltage at the
IGBT/diode
IGBT continuous collector current
± ICP
IGBT peak collector pulse current
VCES
PC
Collector Dissipation
TJ
Junction Temperature
Unit
500
V
Applied between P- NU, NV, NW
dI/dt ≤ 3A/ns
575
V
TJ=25°C
650
V
50
A
Applied between P- NU, NV, NW
Supply voltage
VPN(Surge)
Rating
(Note1)
TC = 100°C, TJmax=175°C
TC = 25°C, TJmax=175°C,
(Note 6)
VCC=VBS=15V, less than 1ms
TC = 25°C per IGBT
IGBT/Diode
Driver IC
150
A
333
-40 ~ +175
-40 ~ +150
W
°C
°C
Condition
Rating
Unit
Control Part
Symbol
Parameter
VCC
Control Supply Voltage
VBS
High-side Control Bias Voltage
VIN
Input Signal Voltage
VFO
IFO
VSC
VTS
Fault Output Supply Voltage
Fault Output Current
Current Sensing Input Voltage
Temperature sense unit
Applied between VCC(H), VCC(L) - COM
20
Applied between VB(U) - VS(U), VB(V) 20
VS(V), VB(W) - VS(W)
Applied between IN(UH), IN(VH), IN(WH),
-0.3 ~ VCC+0.3
IN(UL), IN(VL), IN(WL) - COM
Applied between VFO - COM
-0.3 ~ VCC+0.3
Sink Current at VFO Pin
5
Applied between CSC - COM
-0.3 ~ VCC+0.3
-0.3 ~ 2/3 x VCC)
V
V
V
V
mA
V
V
Total System
Symbol
TSTG
Parameter
Condition
Storage Temperature
VISO
Isolation Voltage
60Hz, Sinusoidal, AC 1 minute,
Connection Pins to heat sink plate
TLEAD
Max lead temperature at the base
of the package during pcb
assembly
No remelt of internal solder joints
Rating
Unit
-40 ~ 125
°C
2500
Vrms
200
°C
Package Characteristics
Symbol
Rth(j-c)Q
Rth(j-c)F
Lσ
Parameter
Junction to Case Thermal
(2)
Resistance
Package Stray Inductance
Conditions
Inverter IGBT part (per IGBT)
Inverter FWD part (per DIODE)
(3)
P to NU, NV, NW
Typ.
Max.
Units
24
0.45
0.85
-
°C/W
°C/W
nH
Notes:
1. Current limited by package terminal, defined by design
2. Case temperature measured below the package at the chip center, compliant with MIL STD 883-1012.1 (single
chip heating), DBC discoloration allowed, please refer to application note AN-9190 (Impact of DBC Oxidation on
®
SPM Module Performance)
3. Stray inductance per phase measured per IEC 60747-15
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
www.onsemi.com
www.fairchildsemi.com
5
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)
Inverter part (TJ as specified)
Symbol
VCE(SAT)
VF
Parameters
Conditions
Collector-Emitter Saturation
Voltage
FWD Forward Voltage
Min
Typ
Max
Unit
VCC = VBS = 15 V, VIN = 5 V
IC = 50 A, TJ = 25°C
-
1.65
-
V
VCC = VBS = 15 V, VIN = 5 V
IC = 50 A, TJ = 125°C
-
1.9
2.4
V
-
2.1
-
V
1.9
2.5
V
-
0.73
0.12
0.80
0.14
0.10
0.70
0.15
0.87
0.19
-
-
-
-
0.20
0.68
0.20
0.86
0.19
0.14
0.64
0.24
0.88
0.23
0.20
-
5
-
μs
-
3
-
μA
-
150
1500
μA
VIN = 0 V, IF = 30 A, TJ = 25°C
VIN = 0 V, IF = 30 A, TJ = 125°C
HS
LS
tON
tC(ON)
tOFF
tC(OFF)
trr
tON
tC(ON)
tOFF
tC(OFF)
trr
tON
tC(ON)
tOFF
tC(OFF)
trr
tON
tC(ON)
tOFF
tC(OFF)
trr
SCWT
ICES
VPN = 300 V, VCC = VBS = 15 V
IC = 50 A
VIN = 0 V ↔ 5V, Ls=55 nH,
Inductive Load
(4 , 5)
TJ= 25°C
High Side Switching Times
VPN = 300 V, VCC = VBS = 15 V
IC = 50 A
VIN = 0 V ↔ 5V, Ls=55 nH,
Inductive Load
(4, 5)
TJ= 125°C
High Side Switching Times
Low Side Switching Times
VPN = 300 V, VCC = VBS = 15 V
IC = 50 A
VIN = 0 V ↔ 5 V, Ls=55 nH,
Inductive Load
(4, 5)
TJ= 25°C
Low Side Switching Times
Short Circuit withstand time
VPN = 300 V, VCC = VBS = 15 V
IC = 50 A
VIN = 0 V ↔ 5 V, Ls=55 nH,
Inductive Load
(4,5)
TJ= 125°C
(6)
Collector-Emitter Leakage
Current for IGBT and diode in
parallel
VCC = VBS = 15 V, VPN= 450 V,
TJ= 25°C, Non-repetitive
TJ= 25°C, VCE = 650 V
TJ= 125°C, VCE = 650 V
μs
μs
-
μs
μs
Notes:
4. tON and tOFF include the propagation delay time of the internal drive IC. t C(ON) and tC(OFF) are the switching times
of IGBT itself under the given gate driving condition internally. Refer to Figure 6 for detailed information
5. Stray inductance Ls is sum of stray inductance of module & setup
6. Verified by design and bench-testing only
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
www.onsemi.com
www.fairchildsemi.com
6
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
Electrical Specifications
Symbol
IQCCL
IQCCH
Parameters
Quiescent VCC Supply
Current
IPCCH
Operating VCC Supply
Current
IQCCL
Quiescent VBS Supply
Current
IPBS
Operating VBS Supply
Current
VFOH
Fault Output Voltage
VFOL
Short-Circuit Trip Level
UVCCD
UVCCR
UVBSD
VCC = 15 V,
IN(UH, VH, WH) = 0 V
VCC(UH, VH, WH) = 15 V
fPWM = 20 kHz
Duty=50%, applied to
one PWM signal input
for high-side
VCC(UH, VH, WH) = 15 V
fPWM = 20 kHz
VCC(L) – COM
VCC(H) – COM
VCC(UH) – COM
VCC(VH) – COM
VCC(WH) – COM
Supply Circuit UnderVoltage Protection
UVBSR
tFOD
Fault-out Pulse Width
VTS
LVIC Temperature Sensing
Voltage Output
VIN(ON)
ON Threshold Voltage
VIN(OFF)
OFF Threshold Voltage
Min
Typ
Max
Unit
-
-
5
mA
-
-
150
μA
-
-
0.30
mA
-
-
8.5
mA
-
-
150
μA
VCC(L) – COM
Duty=50%, applied to
one PWM signal input
for low-side
IQBS
VSC(ref)
Conditions
VCC = 15 V,
IN(UL, VL, WL) = 0 V
VB(U) - VS(U)
VB(V) -VS(V
VB(W) - VS(W)
VB(U) - VS(U)
VCC=VBC=15 V
VB(V) -VS(V
IN(UH, VH, WH) = 0 V
VB(W) - VS(W)
VSC = 0 V, VFO Circuit: 4.7 kΩ to 5 V Pullup
-
-
4.5
mA
4.5
-
-
V
VSC = 1 V, VFO Circuit: 4.7 kΩ to 5 V Pullup
-
-
0.5
V
0.45
0.52
0.59
V
Detection Level, TJ= 125°C
10.6
-
13.2
V
Reset Level, TJ= 125°C
11.0
-
13.8
V
Detection Level, TJ= 125°C
10.5
-
13
V
Reset Level, TJ= 125°C
10.8
-
13.3
V
-
60
-
μs
-
2.4
-
V
-
2.6
3.1
V
0.9
1.2
-
V
VBS = 15 V,
IN(UH, VH, WH) = 0V
VCC = 15 V
(7)
CSC-COM
VCC(L) = 15 V, TLVIC =125˚C
(8)
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) – COM
Notes:
7. Short-circuit current protection is functional only for low side
8. TLVIC is the junction temperature of the LVIC itself
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
www.onsemi.com
www.fairchildsemi.com
7
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
Control Part (TJ = -40°C to 150°C, unless otherwise specified, typical values specified at TJ=125°C)
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
HINx
LINx
trr
toff
ton
100% ICx
ICx
90% ICx
10% VCEx
10% ICx
vCEx
10% VCEx
10% ICx
tc(on)
tc(off)
Figure 6a. Switching Time Definition
Figure 7b. Switching Evaluation Circuit
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
www.onsemi.com
www.fairchildsemi.com
8
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
Operating Conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
Parameters
Conditions
Min
Typ
Max
Unit
VPN
Supply Voltage
Applied between P - NU, NV, NW
-
450
500
V
VCC
Control Supply Voltage
Applied between VCC(H), VCC(L) COM
13.5
15
16.5
V
VBS
High-side Bias Voltage
Applied between VB(U) - VS(U),
VB(V) - VS(V), VB(W) - VS(W)
13.3
15
18.5
V
dVCC/dt,
dVBS/dt
Control supply variation
-1
-
1
V/µs
1.0
-
-
µs
-
-
20
kHz
-4
-
4
V
-40
-
150
°C
tdead
Blanking Time for Preventing Armshort
For Each Input Signal
fPWM
PWM Input Signal
TC= 125°C
VSEN
Voltage for Current Sensing
Applied between NU, NV, NW
TJ
–
COM
voltage)
(Including
surge
Junction temperature
Mechanical Characteristics and Ratings
Parameter
Mounting Torque
Device Flatness
Weight
Conditions
Mounting Screw: - M3
Limits
Conditions
Recommended 0.62N•m
Units
Min.
Typ.
Max.
0.51
0.62
0.80
+150
15
N•m
μm
g
Figure 8. Flatness Measurement Position
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
www.onsemi.com
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9
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
Recommended Operating Conditions
100
90
80
TJ=125 C
90
TJ=150 C
80
70
70
60
60
IC [A]
IC [A]
100
TJ=25 C
50
TJ=25 C
TJ=125 C
TJ=150 C
50
40
40
30
30
20
20
10
10
0
0
0
1
2
VCE [V]
3
0
4
Figure 9. Output characteristics IGBT inverter (typical)
VCC = VBS = 15 V, VIN=5 V
2
VCE [V]
3
4
Figure 10. Forward characteristics DIODE inverter
(typical)
VIN=0 V
18.00
18.00
EON, VPN=450V
EON, VPN=450V
EOFF, VPN=450V
16.00
EOFF, VPN=450V
16.00
EON, VPN=300V
14.00
EON, VPN=300V
14.00
EOFF, VPN=300V
Switching Energy (mJ)
Switching Energy (mJ)
1
12.00
10.00
8.00
6.00
10.00
8.00
6.00
4.00
4.00
2.00
2.00
0.00
EOFF, VPN=300V
12.00
0.00
0
20
40
60
80
100
0
Collector Current IC (A)
Figure 11. Switching losses IGBT inverter High-Side
(typical) versus collector current
VCC = VBS = 15 V
VIN = 0 V ↔ 5 V, Ls=55 nH, Inductive Load, TJ=125°C
20
40
60
80
100
Collector Current IC (A)
Figure 12. Switching losses IGBT inverter Low-Side
(typical) versus collector current
VCC = VBS = 15 V
VIN = 0 V ↔ 5 V, Ls=55 nH, Inductive Load, TJ=125°C
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
www.onsemi.com
www.fairchildsemi.com
10
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
Typical Inverter Characteristics
175
ERR, VPN=450V, HS
ERR, VPN=450V, LS
ERR, VPN=300V, HS
ERR, VPN=300V, LS
0.40
150
IC Module
0.30
100
75
0.20
50
0.10
25
0
0.00
0
20
40
60
80
0
100
100
200
Figure 13. Reverse recovery energy DIODE inverter
(typical) versus forward current
VCC = VBS = 15 V
VIN = 0 V ↔ 5 V, Ls=55nH, Inductive Load, TJ=125°C
400
500
600
700
Figure 14. Reverse Bias Safe Operating Area IGBT
(RBSOA) inverter
VCC = VBS = 15 V, Tj=150°C
1.00
1.00
ZthJC DIODE
Thermal Response (ZthJC)
ZthJC IGBT
0.10
0.10
i:
1
2
3
ri [°C/W]: 0.0070 0.1389 0.2439
τ [s]:
1.05e-5 1.31e-4 2.09e-3
3
i:
1
2
3
4
ri [°C/W]: 0.0264 0.0615 0.132
0.05
τ [s]:
6.04e-6 5.8e-5 1.25e-3 5.14e-3
0.01
0.0001
300
VCE (V)
Forward Current IF (A)
Thermal Response (ZthJC)
IC Chip
125
IC (A)
Reverse Recovery Energy (mJ)
0.50
0.001
0.01
0.1
0.01
0.0001
1
0.01
0.1
1
Time Duration (s)
Time Duration (s)
Figure 15. Transient thermal impedance IGBT inverter
0.001
4
0.1411
5.86e-
Figure 16. Transient thermal impedance DIODE inverter
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
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11
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
Typical Inverter Characteristics
3.50
3.50
VTS
VIN(OFF)
3.00
3.00
2.50
2.50
2.00
VIN [V]
VTS [V]
VIN(ON)
2.00
1.50
1.50
1.00
1.00
0.50
0.50
0.00
-40
-10
20
50
80
TJ [ C]
110
Figure 17. Temperature profile of VTS (typical)
12.40
-40
140
20
50
80
TJ [ C]
110
140
Figure 18. Threshold voltage versus temperature
12.80
UVBSD
UVBSR
12.20
-10
UVCCD
UVCCR
12.60
12.40
12.00
UVCC [V]
UVBS [V]
12.20
11.80
11.60
12.00
11.80
11.40
11.60
11.20
11.40
11.20
11.00
-40
-10
20
50
80
TJ [ C]
110
-40
140
Figure 19. Supply under-voltage protection high-side
(typical)
-10
20
50
80
TJ [ C]
110
140
Figure 20. Supply under-voltage protection low-side
(typical)
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
www.onsemi.com
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12
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
Typical Controller Characteristics
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
Timing Chart Protective Functions
Lower arms
control input
A6
Protection
circuit state
A7
SET
Lower arms
gate input
RESET
A4
A2
A3
SC
A1
Output Current
A8
SC Reference Voltage
Sensing Voltage
A5
Fault Output Signal
Step
A1
A2
A3
A4
A5
A6
A7
A8
tFOD
Description
Normal operation. IGBT on and carrying current
Short-circuit current threshold reached
Protection function triggered
IGBT turns off with soft turn-off
Fault output activated (initial delay 2 μs, tFOD min.
50μs)
IGBT “LO” input
IGBT “HI” input is ignored
Current stays at zero during fault state
Figure 21. Short-Circuit Current Protection
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
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13
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
Input Signal
Protection Circuit
State
RESET
SET
UVCCR
Filtering
B1
Control
Supply Voltage
RESET
B6
UVCCD
B3
B2
B7
B4
Restart
Output Current
High-level (no fault output)
B5
Fault Output Signal
Step
Description
B1
B2
B3
B4
Control supply voltage rises above reset voltage UVCCR
Normal operation. IGBT on and carrying current
Control supply voltage falls below detection voltage UVCCD
Filtered supply voltage falls below UVCCD and IGBT turns off
B5
Fault output activated (initial delay 2 μs, tFOD min. 50μs)
Control supply voltage rises above reset voltage UV CCR
IGBT “HI” input is followed after fault output duration and supply voltage
rise
Figure 22. Under-Voltage Protection (Low-side)
B6
B7
Input Signal
Protection Circuit
State
RESET
SET
UVBSR
Control
Supply Voltage
RESET
Filtering
C1
UVBSD
C5
C3
C2
C4
Restart
C6
Output Current
High-level (no fault output)
Fault Output Signal
Step
Description
C1
C2
Control supply voltage rises above reset voltage UVCCR
Normal operation. IGBT on and carrying current
Control supply voltage falls below detection voltage
UVCCD
Filtered supply voltage falls below UVCCD and IGBT turns
off
Control supply voltage rises above reset voltage UV CCR
IGBT “HI” input is followed after supply voltage rise
Figure 23 Under-Voltage Protection (High-side)
C3
C4
C5
C6
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
www.onsemi.com
www.fairchildsemi.com
14
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
Physical Dimensions Dimension is in millimeter unless otherwise noted.
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
www.onsemi.com
www.fairchildsemi.com
15
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
Physical Dimensions
Note: Marking pattern shown for final production version, which slightly differ from previous
engineering versions.
© 2016 Semiconductor Component Industries, LLC
FAM65V05DF1 Rev. 1.0
www.onsemi.com
www.fairchildsemi.com
16
FAM65V05DF1 Automotive Smart Power Module (Auto SPM®)
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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