N-Channel SuperFET® MOSFET
600 V, 20 A, 190 mΩ
Description
Features
• 650V @ TJ = 150°C
• Typ. RDS(on) = 150 mΩ
• Ultra Low Gate Charge (Typ. Qg = 75 nC )
• Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
• 100% Avalanche Tested
Applications
SuperFET® MOSFET is ON Semiconductor’s first genera-tion
of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
• Solar Inverter
• AC-DC Power Supply
D
G
G
D
S
TO-3PN
S
MOSFET Maximum Ratings TC = 25
Symbol
o
C unless otherwise noted.
FCA20N60 /
FCA20N60-F109
600
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate-Soure voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
Unit
V
±30
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
V
20
A
12.5
(Note 1)
60
A
(Note 2)
690
mJ
IAR
Avalanche Current
(Note 1)
20
A
EAR
Repetitive Avalanche Energy
(Note 1)
20.8
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
TL
- Derate Above 25oC
208
W
1.67
W/oC
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
FCA20N60 /
FCA20N60_F109
RθJC
Thermal Resistance, Junction to Case, Max.
0.6
RθJA
Thermal Resistance, Junction to Ambient, Max.
41.7
©2008 Semiconductor Components Industries, LLC.
October-2017,Rev. 3
Unit
o
C/W
Publication Order Number:
FCA20N60/D
FCA20N60 — N-Channel SuperFET® MOSFET
FCA20N60
Part Number
FCA20N60
Top Mark
FCA20N60
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
FCA20N60-F109
FCA20N60
TO-3PN
Tube
N/A
N/A
30 units
Electrical Characteristics
Symbol
TC = 25oC unless otherwise noted.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ΔBVDSS
/ ΔTJ
BVDS
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
600
-
-
V
ID = 250 μA, VGS = 0 V, TJ = 150oC
-
650
-
V
ID = 250 μA, Referenced to 25oC
-
0.6
-
V/oC
VGS = 0 V, ID = 20 A
-
700
-
V
VDS = 600 V, VGS = 0 V
-
-
1
VDS = 480 V, TC = 125oC
-
-
10
VGS = ±30 V, VDS = 0 V
-
-
±100
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
3.0
-
5.0
V
Static Drain to Source On Resistance
VGS = 10 V, ID = 10 A
-
0.15
0.19
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 10 A
-
17
-
S
VDS = 25 V, VGS = 0 V,
f = 1 MHz
-
2370
3080
pF
-
1280
1665
pF
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
95
-
Coss
Output Capacitance
VDS = 480 V, VGS = 0 V, f = 1 MHz
-
65
85
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
-
165
-
pF
VDS = 480 V, ID = 20 A,
VGS = 10 V
-
75
98
nC
-
13.5
18
nC
-
36
-
nC
Qg
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 300 V, ID = 20 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
-
62
135
ns
-
140
290
ns
-
230
470
ns
-
65
140
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
20
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
60
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 20 A
-
-
1.4
V
trr
Reverse Recovery Time
-
530
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 20 A,
dIF/dt = 100 A/μs
-
10.5
-
μC
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: IAS = 10 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD ≤ 20 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
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2
FCA20N60 — N-Channel SuperFET® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2
10
VGS
2
10
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
ID , Drain Current [A]
ID, Drain Current [A]
Top :
0
10
o
150 C
1
10
o
25 C
o
-55 C
0
10
* Notes :
1. 250μs Pulse Test
* Note
1. VDS = 40V
o
2. 250μs Pulse Test
2. TC = 25 C
-1
0
10
2
1
10
10
4
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2
0.3
VGS = 10V
0.2
VGS = 20V
0.1
1
10
o
150 C
0
10
o
25 C
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
o
* Note : TJ = 25 C
0.0
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
0.2
0.4
0.6
Figure 5. Capacitance Characteristics
7000
Coss
5000
4000
* Notes :
1. VGS = 0 V
Ciss
2. f = 1 MHz
3000
2000
Crss
1000
0
-1
10
0
10
1.4
1.6
VDS = 100V
1
10
VGS, Gate-Source Voltage [V]
Crss = Cgd
6000
1.2
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
8000
1.0
Figure 6. Gate Charge Characteristics
10000
9000
0.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitance [pF]
10
10
IDR , Reverse Drain Current [A]
RDS(ON) [Ω],
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.4
Drain-Source On-Resistance
6
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
10
VDS = 250V
VDS = 400V
8
6
4
2
* Note : ID = 20A
0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
60
70
80
FCA20N60 — N-Channel SuperFET® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250 μA
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
0.5
2. ID = 20 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
o
TJ, Junction Temperature [ C]
50
100
150
200
o
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
25
Operation in This Area
is Limited by R DS(on)
2
10
20
ID, Drain Current [A]
ID, Drain Current [A]
100 us
1 ms
1
10
10 ms
DC
0
10
* Notes :
o
1. TC = 25 C
-1
10
15
10
5
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
10
1
2
10
0
25
3
10
10
50
75
100
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
0
D = 0 .5
10
* N o te s :
0 .2
-1
o
1 . Z θ J C (t) = 0 .6 C /W M a x.
0 .1
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ JC (t)
0 .0 5
PDM
0 .0 2
t1
0 .0 1
θJC
o
ZθJC
Thermal
Response
Z(t),(t),
Thermal
Response[ C/W]
10
10
-2
10
t2
s in g le p u ls e
-5
10
-4
125
o
VDS, Drain-Source Voltage [V]
10
-3
10
-2
10
-1
t 1 ,t1S, q
u a re W a v ePulse
P u ls Duration
e D u ra tio[sec]
n [s e c ]
Rectangular
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4
10
0
10
1
150
FCA20N60 — N-Channel SuperFET® MOSFET
Typical Performance Characteristics (Continued)
FCA20N60 — N-Channel SuperFET® MOSFET
IG = const.
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
DUT
ID (t)
VDS (t)
VDD
tp
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
Time
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
FCA20N60 — N-Channel SuperFET® MOSFET
DUT
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