FCB099N65S3

MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW FCB099N65S3 Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. www.onsemi.com VDSS RDS(ON) MAX ID MAX 650 V 99 mW @ 10 V 30 A D Features • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 79 mW Ultra Low Gate Charge (Typ. Qg = 61 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 544 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant G S POWER MOSFET D Applications • Telecom / Server Power Supplies • Industrial Power Supplies • UPS / Solar G S D2−PAK CASE 418AJ MARKING DIAGRAM $Y&Z&3&K FCB 099N65S3 $Y &Z &3 &K FCB099N65S3 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering, marking and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2019 February, 2020 − Rev. 0 1 Publication Order Number: FCB099N65S3/D FCB099N65S3 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 30 − Continuous (TC = 100°C) 19 IDM Drain Current 75 A EAS Single Pulsed Avalanche Energy (Note 2) 145 mJ IAS Avalanche Current (Note 2) 4.4 A EAR Repetitive Avalanche Energy (Note 1) 2.27 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD TJ, TSTG TL − Pulsed (Note 1) A Power Dissipation (TC = 25°C) 227 W − Derate Above 25°C 1.82 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 4.4 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 15 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJC Thermal Resistance, Junction to Case, Max. 0.55 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping† FCB099N65S3 FCB099N65S3 D2−PAK 330 mm 24 mm 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FCB099N65S3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25_C 650 V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V IGSS Gate to Body Leakage Current 0.68 V/_C 1 mA ±100 nA 4.5 V 99 mW 1.4 VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 0.74 mA RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 15 A 79 Forward Transconductance VDS = 20 V, ID = 15 A 19 S 2480 pF 55 pF gFS 2.5 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 544 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 78 pF Total Gate Charge at 10 V VDS = 400 V, ID = 15 A, VGS = 10 V (Note 4) 61 nC 15 nC 25 nC f = 1 MHz 0.4 W VDD = 400 V, ID = 15 A, VGS = 10 V, Rg = 4.7 W (Note 4) 23 ns 24 ns Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 60 ns Turn-Off Fall Time 5 ns tf SOURCE-DRAIN DIODE CHARACTERISTICS Maximum Continuous Source to Drain Diode Forward Current 30 A ISM Maximum Pulsed Source to Drain Diode Forward Current 75 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 15 A 1.2 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VDD = 400 V, ISD = 15 A, dIF/dt = 100 A/ms IS 408 ns 8.4 mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCB099N65S3 80 80 V = 10.0 V GS 8.0 V 7.0 V 6.5 V 6.0 V 10 5.5 V ID, Drain Current (A) ID, Drain Current (A) TYPICAL PERFORMANCE CHARACTERISTICS 1 VDS = 20 V 250 ms Pulse Test 150°C 10 25°C −55°C 0.1 0.1 250 ms Pulse Test TC = 25°C 1 10 VDS, Drain−Source Voltage (V) 1 20 2 Figure 1. On−Region Characteristics 100 TC = 25°C 0.3 0.2 VGS = 10 V 0.1 VGS = 20 V 0.0 0 10 25°C 0.1 −55°C 0.01 Capacitances (pF) VGS, Gate−Source Voltage (V) 10 10000 Ciss 1000 Coss 100 0.1 0.1 VGS = 0 V f = 1 MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Crss 1 10 100 VDS, Drain−Source Voltage (V) 1.0 1.5 0.5 VSD, Body Diode Forward Voltage (V) Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100000 1 150°C 1 Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage 10 VGS = 0 V 250 ms Pulse Test 0.001 0.0 80 20 40 60 ID, Drain Current (A) 9 Figure 2. Transfer Characteristics IS, Reverse Drain Current (A) RDS(ON), Drain−Source On−Resistance (W) 0.4 8 3 5 4 6 7 VGS, Gate−Source Voltage (V) 8 Figure 5. Capacitance Characteristics VDS = 130 V VDS = 400 V 6 4 2 0 1000 ID = 15 A 0 15 30 45 60 Qg, Total Gate Charge (nC) 75 Figure 6. Gate Charge Characteristics www.onsemi.com 4 FCB099N65S3 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 3.0 VGS = 0 V ID = 10 mA RDS(on), Drain−Source On−Resistance (Normalized) BVDSS, Drain−Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 −50 2.5 2.0 1.5 1.0 0.5 0.0 50 100 150 0 TJ, Junction Temperature (5C) ID, Drain Current (A) ID, Drain Current (A) 100 ms 1 ms 10 ms DC 1 Operation in this Area is Limited by RDS(on) 0.1 0.01 TC = 25°C TJ = 150°C Single Pulse 1 10 100 VDS, Drain−Source Voltage (V) EOSS, (mJ) 10 5 130 260 390 520 VDS, Drain to Source Voltage (V) 10 50 75 100 125 TC, Case Temperature (5C) 150 Figure 10. Maximum Drain Current vs. Case Temperature 15 0 20 0 25 1000 Figure 9. Maximum Safe Operating Area 0 0 50 100 150 TJ, Junction Temperature (5C) 30 30 ms 10 −50 Figure 8. On−Resistance Variation vs. Temperature Figure 7. Breakdown Voltage Variation vs. Temperature 200 100 VGS = 10 V ID = 15 A 650 Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 FCB099N65S3 r(t), Normalized Effective Transient Thermal Resistance TYPICAL PERFORMANCE CHARACTERISTICS (continued) 2 1 0.1 DUTY CYCLE − DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 0.001 −5 10 SINGLE PULSE 10 −4 t2 ZqJC(t) = r(t) x RqJC RqJC = 0.55°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 10 −3 −2 −1 10 10 t, Rectangular Pulse Duration (sec) 10 0 Figure 12. Transient Thermal Response Curve www.onsemi.com 6 10 1 10 2 FCB099N65S3 VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCB099N65S3 + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F SCALE 1:1 GENERIC MARKING DIAGRAMS* XX XXXXXXXXX AWLYWWG IC DOCUMENT NUMBER: DESCRIPTION: XXXXXXXXG AYWW Standard 98AON56370E AYWW XXXXXXXXG AKA Rectifier XXXXXX XXYMW SSG DATE 11 MAR 2021 XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb−Free Package AKA = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. D2PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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