MOSFET – N-Channel,
SUPERFET) II, Easy-Drive
600 V, 37 A, 99 mW
FCH099N60E
Description
SUPERFET II MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This technology is tailored to minimize
conduction loss, provide superior switching performance, dv/dt rate
and higher avalanche energy. Consequently, SUPERFET II MOSFET
easy−drive series offers slightly slower rise and fall times compared to
the SUPERFET II MOSFET series. Noted by the ”E” part number
suffix, this family helps manage EMI issues and allows for easier
design implementation. For faster switching in applications where
switching losses must be at an absolute minimum, please consider the
SUPERFET II MOSFET series.
VDS
RDS(ON) MAX
ID MAX
600 V
99 mW @ 10 V
37 A
D
G
Features
•
•
•
•
•
•
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Typ. RDS(on) = 87 mW
650 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 88 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 309 pF)
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
S
N-CHANNEL MOSFET
S
D
G
Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FCH
099N60E
$Y
&Z
&3
&K
FCH099N60E
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
December, 2019 − Rev. 2
1
Publication Order Number:
FCH099N60E/D
FCH099N60E
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current:
FCH099N60E
Unit
600
V
− DC
±20
V
− AC (f > 1 Hz)
±30
− Continuous (TC = 25°C)
37
− Continuous (TC = 100°C)
24
IDM
Drain Current:
111
A
EAS
Single Pulsed Avalanche Energy (Note 2)
809
mJ
IAR
Avalanche Current (Note 1)
6.8
A
EAR
Repetitive Avalanche Energy (Note 1)
3.57
mJ
dv/dt
MOSFET dv/dt
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
TJ, TSTG
TL
− Pulsed (Note 1)
A
Power Dissipation
(TC = 25°C)
357
W
− Derate Above 25°C
2.85
W/°C
−55 to + 150
°C
300
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. IAS = 6.8 A, RG = 25 W, Starting TJ = 25 °C.
3. ISD ≤ 18.5 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, Starting TJ = 25 °C.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
FCH099N60E
FCH099N60E
TO−247
Tube
N/A
N/A
30 Units
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max.
RqJA
Thermal Resistance, Junction to Ambient, Max.
FCH099N60E
Unit
0.35
°C/W
40
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2
FCH099N60E
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
ID = 10 mA, VGS = 0 V, TJ = 25°C
600
−
−
V
ID = 10 mA, VGS = 0 V, TJ = 150°C
650
−
−
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS
/DTJ
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, Referenced to 25°C
−
0.7
−
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
−
−
1
mA
VDS = 480 V, VGS = 0 V, TC = 125 °C
−
2.1
−
VGS = ±20 V, VDS = 0 V
−
−
±100
nA
IGSS
Gate to Body Leakage Current
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250 mA
2.5
−
3.5
V
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 18.5 A
−
87
99
mW
Forward Transconductance
VDS = 20 V, ID = 18.5 A
−
31.4
−
S
VDS = 380 V, VGS = 0 V, f = 1 MHz
−
2604
3465
pF
gFS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
−
75
100
pF
Crss
Reverse Transfer Capacitance
−
13.9
20
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 480 V, VGS = 0 V
−
309
−
pF
Total Gate Charge at 10 V
VDS = 380 V, ID = 18.5 A, VGS = 10 V
(Note 4)
−
88
114
nC
−
12
−
nC
−
38
−
nC
f = 1 MHz
−
0.6
−
W
VDD = 380 V, ID = 18.5 A,
VGS = 10 V, Rg = 4.7 W
(Note 4)
−
24
58
ns
−
23
56
ns
Qg(tot)
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn−On Rise Time
td(off)
Turn-Off Delay Time
−
92
194
ns
Turn−Off Fall Time
−
22
54
ns
tf
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuous Source to Drain Diode Forward Current
−
−
37
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
−
−
111
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 18.5 A
−
−
1.2
V
trr
Reverse Recovery Time
−
387
−
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 18.5 A,
dIF/dt = 100 A/ms
−
7.3
−
mC
IS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature.
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3
FCH099N60E
TYPICAL CHARACTERISTICS
200
VGS
15.0 V
10.0 V
8.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
*Notes:
1. VDS = 20 V
2. 250 ms Pulse Test
100
ID, Drain Current [A]
ID, Drain Current [A]
100
10
o
150 C
o
25 C
1
o
−55 C
*Notes:
1. 250 ms Pulse Test
2. TC = 25°C
1
0.1
1
VDS, Drain−Source Voltage[V]
10
0.1
20
2
6
4
5
3
VGS, Gate−Source Voltage[V]
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
0.20
200
IS, Reverse Drain Current [A]
RDS(on) [W],
Drain−Source On−Resistance
100
0.16
VGS = 10V
0.12
VGS = 20V
0.08
o
150 C
o
10
25 C
*Notes:
1. VGS = 0 V
2. 250 ms Pulse Test
o
0.04
*Note: T C = 25 C
0
20
40
60
80
ID, Drain Current [A]
100
1
0.2
120
0.8
0.6
1.0
1.2
0.4
VSD, Body Diode Forward Voltage [V]
1.4
Figure 4. Body Diode Forward Voltage Variation
vs. Source Current and Temperature
Figure 3. On−Resistance Variation vs. Drain
Current and Gate Voltage
10
100000
Capacitances [pF]
10000
VGS, Gate−Source Voltage [V]
VDS = 120V
Ciss
1000
Coss
100
*Notes:
1. VGS = 0 V
2. f = 1 MHz
10
Crss
Ciss = Cgs + Cgd(Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
0.3
0.1
1
10
100
VDS, Drain−Source Voltage [V]
VDS = 480V
6
4
2
0
600
VDS = 300V
8
*Note: I D = 18.5A
0
36
54
72
18
Q g , Total Gate Charge [nC]
90
Figure 6. Gate Charge Characteristics
Figure 5. Capacitance Characteristics
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4
FCH099N60E
TYPICAL CHARACTERISTICS
3.0
*Notes:
1. VGS = 0 V
2. ID = 10 mA
1.1
RDS(on) , [Normalized]
Drain−Source On−Resistance
BV DSS, [Normalized]
Drain−Source Breakdown Voltage
1.2
1.0
0.9
0.8
−100
−50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.5
2.0
1.5
1.0
0.0
−100
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
10m s
30
100m s
ID, Drain Current [A]
ID, Drain Current [A]
200
40
100
1ms
10ms
DC
10
Operation in This Area
is Limited by RDS(on)
*Notes:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
1
0.1
0.1
1
10
100
VDS, Drain−Source Voltage [V]
12
8
4
100
200
300
400
500
VDS, Drain to Source Voltage [V]
10
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 10. Maximum Drain Current
vs. Case Temperature
16
0
20
0
25
1000
Figure 9. Maximum Safe Operating Area
Eoss, [mJ ]
−50
0
50
100
150
o
TJ, Junction Temperature [ C]
Figure 8. On−Resistance Variation
vs. Temperature
300
0
*Notes:
1. VGS = 10 V
2. ID = 18.5 A
0.5
600
Figure 11. Eoss vs. Drain to Source Voltage
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5
FCH099N60E
TYPICAL CHARACTERISTICS
ZqJC(t), Thermal Response [°C/W]
0.5
0.5
0.1
0.2
0.1
0.05
P DM
0.02
t1
0.01 0.01
Single pulse
0.001
−5
10
t
2
*Notes:
1. ZqJC(t) = 0.35°C/W Max.
2. Duty Factor, D = t1/t2
3. TJM − TC = PDM * ZqJC(t)
−4
10
−3
−2
−1
10
10
10
t 1, Rectangular Pulse Duration [sec]
0
10
Figure 12. Transient Thermal Response Curve
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6
1
10
FCH099N60E
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
10%
tr
tf
td(off)
ton
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 @ LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
Time
FCH099N60E
+
DUT
VSD
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
A
DATE 31 JAN 2019
A
E
P1
P
A2
D2
Q
E2
S
B
D
1
2
D1
E1
2
3
L1
A1
L
b4
c
(3X) b
0.25 M
(2X) b2
B A M
DIM
(2X) e
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
A
A1
A2
b
b2
b4
c
D
D1
D2
E
E1
E2
e
L
L1
P
P1
Q
S
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
13.08
~
~
0.51 0.93 1.35
15.37 15.62 15.87
12.81
~
~
4.96 5.08 5.20
~
5.56
~
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
6.60 6.80 7.00
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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