MOSFET – Power,
N-Channel, SUPERFET) III,
Easy-Drive
650 V, 10 A, 360 mW
FCMT360N65S3
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General Description
SuperFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SuperFET III MOSFET Easy−drive series helps
manage EMI issues and allows for easier design implementation.
The Power88 package is an ultra−slim surface−mount package
(1 mm high) with a low profile and small footprint (8x8 mm2).
SuperFET III MOSFET in a Power88 package offers excellent
switching performance due to lower parasitic source inductance and
separated power and drive sources. Power88 offers Moisture
Sensitivity Level 1 (MSL 1).
Features
•
•
•
•
•
•
700 V @ TJ = 150°C
Typ RDS(on) = 310 m
Ultra Low Gate Charge (Typ. Qg = 18 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
Applications
•
•
•
•
Computing / Display Power Supplies
Telecom / Server Power Supplies
Industrial Power Supplies
Lighting / Charger / Adapter
VDSS
RDS(ON) MAX
ID MAX
650 V
360 m @ 10 V
10 A
D
S1 : Driver Source
S2 : Power Source
G
S1 S2
N-CHANNEL MOSFET
S2
S2
PQFN4 8X8 2P
CASE 483AP
S1
G
MARKING DIAGRAM
&Z&3&K
FCMT
360N65S3
&Z
&3
&K
FCMT360N65S3
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
February, 2020 − Rev. 1
1
Publication Order Number:
FCMT360N65S3/D
FCMT360N65S3
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
Value
Unit
650
V
DC
±30
V
AC (f > 1 Hz)
±30
V
Continuous (TC = 25°C)
10
A
Continuous (TC = 100°C)
6
Pulsed (Note 1)
IDM
Drain Current
25
A
EAS
Single Pulsed Avalanche Energy (Note 2)
40
mJ
IAS
Avalanche Current (Note 1)
2.1
A
EAR
Repetitive Avalanche Energy (Note 1)
0.83
mJ
dv/dt
MOSFET dv/dt
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s
83
W
0.67
W/°C
−55 to +150
°C
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. IAS = 2.1 A, RG = 25 starting TJ = 25°C
3. ISD ≤ 5 A, di/dt ≤ 200 A/s, VDD ≤ 400 V, starting TJ = 25°C
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
°C/W
RJC
Thermal Resistance, Junction to Case, Max.
1.5
RJA
Thermal Resistance, Junction to Ambient, Max. (Note 4)
45
4. Device on 1 in2 pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material.
ORDERING INFORMATION
Device
Marking
Package
Reel Size
Tape Width
Quantity†
FCMT360N65S3
FCMT360N65S3
PQFN8
13″
13.3 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
FCMT360N65S3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = 1 mA, TJ = 25°C
650
V
VGS = 0 V, ID = 1 mA, TJ = 150°C
700
V
BVDSS
/TJ
Breakdown Voltage Temperature
Coefficient
ID = 1mA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
0.68
VDS = 520 V, TC = 125 °C
IGSS
Gate to Source Leakage Current
V/°C
10
A
±100
nA
4.5
V
360
m
0.58
VGS = ±30 V, VDS = 0 V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 200 A
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 5 A
310
Forward Transconductance
VDS = 20 V, ID = 5 A
6
S
VDS = 400 V, VGS = 0 V, f = 1 MHz
730
pF
gFS
2.5
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
15
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
173
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
26
pF
Total Gate Charge at 10 V
VDS = 400 V, VGS = 10 V,
ID = 5 A
(Note 5)
18
nC
4.3
nC
7.6
nC
f = 1 MHz
1
VDD = 400 V, ID = 5 A, VGS = 10 V,
RGEN = 4.7
(Note 5)
12
ns
11
ns
Turn-Off Delay Time
34
ns
Fall Time
10
ns
Qg(tot)
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
SWITCHING CHARACTERISTICS
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
SOURCE−DRAIN DIODE CHARACTERISTICS
Source to Drain Diode Forward VoltageMaximum Continuous Source to Drain
Diode Forward Current
10
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
25
A
VSD
IS
Source to Drain Diode Forward Voltage
VGS = 0 V, ISD = 5 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VDD = 400 V, ISD = 5 A,
diF/dt = 100 A/s
1.2
V
241
ns
2.4
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
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3
FCMT360N65S3
TYPICAL PERFORMANCE CHARACTERISTICS
ID, Drain Current[A]
10
50
VGS = 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
ID, Drain Current[A]
50
1
*Notes:
1. VDS = 20V
2. 250 s Pulse Test
10
o
150 C
o
25 C
1
o
−55 C
*Notes:
1. 250 s Pulse Test
o
2. TC = 25 C
0.1
0.2
1
10
VDS, Drain−Source Voltage[V]
0.1
20
2
Figure 1. On-Region Characteristics
*Notes:
1. VGS = 0V
1.0
0.8
0.6
VGS = 10V
VGS = 20V
0.2
0.0
0
5
10
15
20
ID, Drain Current [A]
25
10
o
1
o
25 C
0.1
o
VGS, Gate−Source Voltage [V]
Capacitances [pF]
10000
1
Ciss
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss = C gs + Cgd (C ds = shorted)
Coss = C ds + Cgd
Crss = Cgd
0.1
0.1
1
10
100
VDS, Drain−Source Voltage [V]
0.0
0.5
1.0
VSD, Body Diode Forward Voltage [V]
1.5
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
10
100
−55 C
0.01
100000
1000
2. 250 s Pulse Test
150 C
0.001
30
Figure 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
10
8
100
o
*Note: TC = 25 C
0.4
4
5
6
7
VGS, Gate−Source Voltage[V]
Figure 2. Transfer Characteristics
IS, Reverse Drain Current [A]
RDS(ON),
Drain−Source On−Resistance [ ]
1.2
3
Crss
8
Figure 5. Capacitance Characteristics
VDS = 130V
VDS = 400V
6
4
2
0
1000
*Note: I D = 5A
0
5
10
15
Qg, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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4
20
FCMT360N65S3
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
3.0
*Notes:
1. VGS = 0V
2. I D = 10mA
1.1
RDS(on), [Normalized]
Drain−Source On−Resistance
BVDSS, [Normalized]
Drain−Source Breakdown Voltage
1.2
1.0
0.9
0.8
−50
0
50
100
o
TJ, Junction Temperature [ C]
1.0
0.5
−50
0
50
100
o
TJ, Junction Temperature [ C]
150
12
10
10 s
10
ID, Drain Current [A]
100 s
1ms
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
*Notes:
0.1
o
1. TC = 25 C
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain−Source Voltage [V]
4
3
2
1
130
260
390
520
VDS, Drain to Source Voltage [V]
4
25
50
75
100
125
TC, Case Temperature [ o C]
150
Figure 10. Maximum Drain Current
vs. Case Temperature
5
0
6
0
1000
Figure 9. Maximum Safe Operation Area
0
8
2
o
EOSS [ J]
1.5
Figure 8. On-Resistance Variant vs. Temperature
100
ID, Drain Current [A]
2.0
0.0
150
Figure 7. Breakdown Voltage Variation
vs. Temperature
0.01
2.5
*Notes:
1. VGS = 10V
2. I D = 5A
650
Figure 11. EOSS vs. Drain to Source Voltage
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5
FCMT360N65S3
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
2
1
0.1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
0.001
−5
10
NOTES:
Z JC(t) = r(t) x RJC
RJC = 1.5 oC/W
Peak T J = PDM x ZJC(t) + TC
Duty Cycle, D = t1 / t2
SINGLE PULSE
−4
10
−3
10
−2
−1
10
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
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6
0
10
1
10
2
10
FCMT360N65S3
VGS
RL
Qg
VDS
VGS
Qgs
Qgd
DUT
IG = Const.
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
10%
td(off)
tr
ton
tf
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 @ LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
Time
FCMT360N65S3
+
DUT
VDS
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC.
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8
VDD
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN4 8X8, 2P
CASE 483AP
ISSUE A
DOCUMENT NUMBER:
98AON13664G
DESCRIPTION:
PQFN4 8X8, 2P
DATE 06 JUL 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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