FCP104N60F

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCP104N60F N-Channel SuperFET® ll FRFET® MOSFET 600 V, 37 A, 104 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET® II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. • Typ. RDS(on) = 91 mΩ • Ultra Low Gate Charge (Typ. Qg = 110 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 313 pF) • 100% Avalanche Tested Applications • Lighting • Solar Inverter • AC-DC Power Supply D GD S G TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current - DC - AC (f > 1Hz) - Continuous (TC = 25oC) Unit V ±20 V ±30 V 37 - Continuous (TC = 100oC) 24 A IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 6.8 A EAR Repetitive Avalanche Energy (Note 1) 3.57 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt - Pulsed FCP104N60F 600 MOSFET dv/dt 114 A (Note 2) 809 mJ 50 100 (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL (Note 1) - Derate Above 25oC V/ns 357 W 2.85 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FCP104N60F RθJC Thermal Resistance, Junction to Case, Max. 0.35 RθJA Thermal Resistance, Junction to Ambient ,Max. 62.5 ©2013 Fairchild Semiconductor Corporation FCP104N60F Rev. C3 1 Unit oC/W www.fairchildsemi.com FCP104N60F — N-Channel SuperFET® II FRFET® MOSFET December 2014 Part Number FCP104N60F Top Mark FCP104N60F Package TO220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics VGS = 0 V, ID = 10 mA, TJ = 25oC 600 - - 650 - - - 0.67 - V/oC - 700 - V - - 10 - 16 - - ±100 BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ Breakdown Voltage Temperature ID = 10 mA, Referenced to 25oC Coefficient Drain-Source Avlanche Breakdown VoltVGS = 0 V, ID = 18.5 A age VDS = 600V, VGS = 0 V Zero Gate Voltage Drain Current VDS = 480 V, TC = 125oC Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - BVDS IDSS IGSS VGS = 0 V, ID = 10 mA, TJ = 150oC V μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3 - 5 V Static Drain to Source On Resistance VGS = 10 V, ID = 18.5 A - 91 104 mΩ gFS Forward Transconductance VDS = 20 V, ID = 18.5 A - 33 - S - 4610 6130 pF - 3255 4330 pF - 155 235 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 74 - pF Coss eff. Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 313 - pF Qg(tot) Total Gate Charge at 10V - 110 145 nC Qgs Gate to Source Gate Charge VDS = 380 V, ID = 18.5 A VGS = 10 V - 24 - nC 44 - nC Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance VDS = 25 V, VGS = 0 V f = 1 MHz (Note 4) - Drain open Ω 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 18.5 A VGS = 10 V, RGEN = 4.7 Ω (Note 4) - 34 78 ns - 20 50 ns - 102 214 ns - 5.7 21.4 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 37 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 114 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 18.5 A - - 1.2 V trr Reverse Recovery Time - 144 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 18.5 A dIF/dt = 100 A/μs - 0.91 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 6.8 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 18.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2013 Fairchild Semiconductor Corporation FCP104N60F Rev. C3 2 www.fairchildsemi.com FCP104N60F — N-Channel SuperFET® II FRFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 100 ID, Drain Current[A] ID, Drain Current[A] VGS = 20.0V 15.0V 10.0V 8.0V 7.0V 6.5V 5.5V 10 *Notes: 1. VDS = 20V 2. 250μs Pulse Test 10 o 150 C o 25 C *Notes: 1. 250μs Pulse Test o -55 C o 1 0.1 2. TC = 25 C 1 1 VDS, Drain-Source Voltage[V] 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.1 VGS = 20V o 10 o 150 C 1 o 25 C 0.1 o -55 C 0.01 *Notes: 1. VGS = 0V *Note: TC = 25 C 0 22 44 66 ID, Drain Current [A] 88 0.001 0.0 110 Figure 5. Capacitance Characteristics 2. 250μs Pulse Test 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage [V] 1.6 Figure 6. Gate Charge Characteristics 100000 VGS, Gate-Source Voltage [V] 10 10000 Ciss Capacitances [pF] 8 100 VGS = 10V 1000 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 1 4 6 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.2 0.0 2 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 Coss Crss 1 10 100 VDS, Drain-Source Voltage [V] ©2013 Fairchild Semiconductor Corporation FCP104N60F Rev. C3 VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 *Note: ID = 18.5A 0 600 3 0 20 40 60 80 100 Qg, Total Gate Charge [nC] 120 www.fairchildsemi.com FCP104N60F — N-Channel SuperFET® II FRFET® MOSFET Typical Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 -75 -50 -25 0 25 50 75 100 125 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 18.5A 0.5 -75 -50 -25 0 25 50 75 100 125 150 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 40 10μs 100 ID, Drain Current [A] ID, Drain Current [A] 1000 100μs 10 1 1ms 10ms Operation in This Area is Limited by R DS(on) *Notes: 0.1 DC o 30 20 10 1. TC = 25 C o 0.01 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] ZθJC(t), Thermal Response [oC/W] 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 0.01 0.02 0.01 o 1. ZθJC(t) = 0.35 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 ©2013 Fairchild Semiconductor Corporation FCP104N60F Rev. C3 t2 *Notes: -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 www.fairchildsemi.com FCP104N60F — N-Channel SuperFET® II FRFET® MOSFET Typical Characteristics (Continued) FCP104N60F — N-Channel SuperFET® II FRFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2013 Fairchild Semiconductor Corporation FCP104N60F Rev. C3 5 www.fairchildsemi.com FCP104N60F — N-Channel SuperFET® II FRFET® MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2013 Fairchild Semiconductor Corporation FCP104N60F Rev. C3 6 www.fairchildsemi.com 3.89 3.60 0.36 M 10.360 10.109 A B B A 2.860 2.660 8.89 6.86 6.477 6.121 1.41 1.17 7° 3° 15.215 14.757 15.97 8.787 15.89 8.587 1 13.894 12.941 12.878 12.190 5° 3° 5° 3° 3 3 2.640 2.440 1 2.755 2.555 1.650 (SEE NOTE E) 1.250 1.91 5° 3° C 0.889 0.787 0.36 M C B 0.457 0.357 5.180 4.980 5° 3° 4.672 4.472 NOTES: A. PACKAGE REFERENCE: JEDEC TO220 VARIATION AB B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. MAX WIDTH FOR F102 DEVICE = 1.35mm. F. DRAWING FILE NAME: TO220T03REV4. G. FAIRCHILD SEMICONDUCTOR. 3.962 3.505 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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