FCP11N60N

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCP11N60N / FCPF11N60NT N-Channel SupreMOS® MOSFET 600 V, 10.8 A, 299 mΩ Features Description • RDS(on) = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. • Ultra Low Gate Charge (Typ. Qg = 27.4 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 130 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED/PDP TV • Lighting • Solar Inverter • AC-DC Power Supply D GD S G G D S TO-220 TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FCP11N60N FCPF11N60NT 600 ±30 - Continuous (TC = 25oC) Unit V V 10.8 10.8* 6.8 6.8* ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 3.7 A EAR Repetitive Avalanche Energy (Note 1) 0.94 mJ 100 V/ns dv/dt - Continuous (TC = 100oC) - Pulsed 32.4 32.4* Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds - Derate Above 25oC A 201.7 MOSFET dv/dt PD TL (Note 1) A mJ 20 V/ns 94.0 32.1 W 0.75 0.26 W/oC -55 to +150 oC 300 oC *Drain current limited by maximum junction temperature. Thermal Characteristics FCP11N60N FCPF11N60NT RθJC Symbol Thermal Resistance, Junction to Case, Max. Parameter 1.33 3.9 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 ©2009 Fairchild Semiconductor Corporation FCP11N60N / FCPF11N60NT Rev. C1 1 Unit oC/W www.fairchildsemi.com FCP11N60N / FCPF11N60NT — N-Channel SupreMOS® MOSFET November 2013 Part Number FCP11N60N Top Mark FCP11N60N Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FCPF11N60NT FCPF11N60NT TO-220F Tube N/A N/A 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 600 - - V - 0.73 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 1 mA, VGS = 0 V, TC = 25oC ID = 1 mA, Referenced to 25oC VDS = 480 V, VGS = 0 V - - 10 VDS = 480 V, VGS = 0 V, TC = 125oC - - 100 VGS = ±30 V, VDS = 0 V - - ±100 μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 5.4 A - 0.255 0.299 Ω gFS Forward Transconductance VDS = 40 V, ID = 5.4 A - 13.5 - S VDS = 100 V, VGS = 0 V, f = 1 MHz - 1130 1505 pF - 45 60 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 3 5 Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 25 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 130 - pF Qg(tot) Total Gate Charge at 10V 27.4 35.6 nC Gate to Source Gate Charge VDS = 380 V, ID = 5.4 A, VGS = 10 V - Qgs - 4.9 - nC - 8.8 - nC - 2.0 - Ω - 13.6 37.2 ns - 9.1 28.2 ns - 42.0 94.0 ns - 10.0 30.0 ns Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 5.4 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 10.8 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 32.4 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 5.4 A - - 1.2 V trr Reverse Recovery Time 268 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 5.4 A, dIF/dt = 100 A/μs - 3.1 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 3.7 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 10.8 A, di/dt ≤ 200 A/μs, VDD = 380 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2009 Fairchild Semiconductor Corporation FCP11N60N / FCPF11N60NT Rev. C1 2 www.fairchildsemi.com FCP11N60N / FCPF11N60NT — N-Channel SupreMOS® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 60 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 10 ID, Drain Current[A] ID, Drain Current[A] 100 1 10 o o 150 C 25 C o -55 C 1 *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 0.1 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 10 0.1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.6 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 8 100 0.5 VGS = 10V 0.4 VGS = 20V 0.3 o *Notes: TC = 25 C 0 8 16 24 ID, Drain Current [A] o 150 C 10 o 25 C *Notes: 1. VGS = 0V 1 0.4 32 2. 250μs Pulse Test 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 6000 10 4000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] Capacitances [pF] 4 6 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.7 0.2 2 Coss *Notes: 1. VGS = 0V 2. f = 1MHz 2000 Ciss 8 VDS = 120V VDS = 300V VDS = 480V 6 4 2 Crss 0 0.1 1 10 100 VDS, Drain-Source Voltage [V] ©2009 Fairchild Semiconductor Corporation FCP11N60N / FCPF11N60NT Rev. C1 0 600 3 *Notes: ID = 5.4A 0 5 10 15 20 25 Qg, Total Gate Charge [nC] 30 www.fairchildsemi.com FCP11N60N / FCPF11N60NT — N-Channel SupreMOS® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.0 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 20μs 100μs 1ms 10ms DC Operation in This Area is Limited by R DS(on) *Notes: 0.1 o 1ms Operation in This Area is Limited by R DS(on) 10 100 VDS, Drain-Source Voltage [V] DC *Notes: o 1. TC = 25 C o 1 10ms 1 0.1 1. TC = 25 C 100μs 10 2. TJ = 150 C 3. Single Pulse 0.01 0.1 *Notes: 1. VGS = 10V 2. ID = 5.4A 0.5 100 ID, Drain Current [A] ID, Drain Current [A] 1.5 Figure 10. Maximum Safe Operating Area for FCPF11N60NT 20μs 10 1 2.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area for FCP11N60N 50 2.5 o 0.01 0.1 1000 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 11. Maximum Drain Current vs. Case Temperature ID, Drain Current [A] 12 9 6 3 0 25 50 75 100 125 o TC, Case Temperature [ C] ©2009 Fairchild Semiconductor Corporation FCP11N60N / FCPF11N60NT Rev. C1 150 4 www.fairchildsemi.com FCP11N60N / FCPF11N60NT — N-Channel SupreMOS® MOSFET Typical Performance Characteristics (Continued) FCP11N60N / FCPF11N60NT — N-Channel SupreMOS® MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve for FCP11N60N 1 0.5 θ JC o ZθJC (t), Thermal Response Thermal Response [Z [ C/W] ] 2 0.2 PDM 0.1 0.1 t1 0.05 t2 *Notes: 0.02 o 1. ZθJC(t) = 1.33 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 Single pulse 0.01 -5 10 -4 -3 10 -2 -1 10 10 Rectangular Pulse t1, Rectangular PulseDuration Duration [sec] [sec] 10 1 Figure 13. Transient Thermal Response Curve for FCPF11N60NT ZθJC (t), Thermal Response [o] C/W] Thermal Response [ZθJC 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 *Notes: 0.01 o 1. ZθJC(t) = 3.3 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 t2 -4 10 -3 10 -2 10 -1 10 1 10 2 10 3 10 [sec] tRectangular PulseDuration Duration [sec] 1, RectangularPulse ©2009 Fairchild Semiconductor Corporation FCP11N60N / FCPF11N60NT Rev. C1 5 www.fairchildsemi.com FCP11N60N / FCPF11N60NT — N-Channel SupreMOS® MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FCP11N60N / FCPF11N60NT Rev. C1 6 www.fairchildsemi.com FCP11N60N / FCPF11N60NT — N-Channel SupreMOS® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FCP11N60N / FCPF11N60NT Rev. C1 7 www.fairchildsemi.com FCP11N60N / FCPF11N60NT — N-Channel SupreMOS® MOSFET Mechanical Dimensions Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 ©2009 Fairchild Semiconductor Corporation FCP11N60N / FCPF11N60NT Rev. C1 8 www.fairchildsemi.com FCP11N60N / FCPF11N60NT — N-Channel SupreMOS® MOSFET Mechanical Dimensions Figure 19. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2009 Fairchild Semiconductor Corporation FCP11N60N / FCPF11N60NT Rev. C1 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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