FCP190N65F

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FCP190N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 20.6 A, 190 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. • Typ. RDS(on) = 168 mΩ • Ultra Low Gate Charge (Typ. Qg = 60 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Solar Inverter • AC - DC Power Supply D GD S G TO-220 Absolute Maximum Ratings TC = 25oC unless otherwise noted. S Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 4.0 A EAR Repetitive Avalanche Energy (Note 1) 2.1 mJ dv/dt Parameter - DC (f > 1 Hz) - Continuous (TC = 25oC) - Pulsed (Note 1) 61.8 A (Note 2) 400 mJ 100 (Note 3) (TC = 25oC) TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds - Derate Above 25oC A 13.1 MOSFET dv/dt Peak Diode Recovery dv/dt V ±30 20.6 - Continuous (TC = 100oC) Power Dissipation Unit V ±20 - AC PD TL FCP190N65F 650 50 V/ns 208 W 1.67 W/oC o -55 to +150 C 300 oC FCP190N65F Unit Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. 0.6 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2014 Fairchild Semiconductor Corporation FCP190N65F Rev. C2 1 o C/W www.fairchildsemi.com FCP190N65F — N-Channel SuperFET® II FRFET® MOSFET December 2014 Part Number FCP190N65F Top Mark FCP190N65F Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. VGS = 0 V, ID = 10 mA, TJ = 25°C 650 - - VGS = 0 V, ID = 10 mA, TJ = 150°C 700 - - - 0.72 - Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 10 mA, Referenced to 25oC VDS = 650 V, VGS = 0 V - - 10 VDS = 520 V, TC = 125oC - 60 - VGS = ±20 V, VDS = 0 V - - ±100 V V/oC μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 2 mA 3 - 5 V Static Drain to Source On Resistance - 168 190 mΩ gFS Forward Transconductance VGS = 10 V, ID = 10 A VDS = 20 V, ID = 10 A - 18 - S Dynamic Characteristics - 2425 3225 pF - 2110 2805 pF - 105 155 pF - 44 - pF VDS = 0 V to 400 V, VGS = 0 V - 304 - pF VDS = 380 V, ID = 10 A, VGS = 10 V - 60 78 nC - 12 - nC - 25 - nC - 0.6 - Ω - 25 60 ns - 11 32 ns - 62 134 ns - 4.2 18 ns Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance VDS = 25 V, VGS = 0 V, f = 1 MHz (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 10 A, VGS = 10 V, Rg = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 20.6 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 61.8 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 10 A - - 1.2 V trr Reverse Recovery Time - 105 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 10 A, dIF/dt = 100 A/μs - 515 - nC Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 4 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2014 Fairchild Semiconductor Corporation FCP190N65F Rev. C2 2 www.fairchildsemi.com FCP190N65F — N-Channel SuperFET® II FRFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V *Notes: 1. VDS = 20V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 100 10 10 o 150 C o 25 C 1 o -55 C *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 1 0.3 1 VDS, Drain-Source Voltage[V] 0.1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 7 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] 100 0.3 VGS = 10V 0.2 VGS = 20V 10 o 150 C 1 o 25 C 0.1 0.01 *Notes: 1. VGS = 0V o 0.1 *Note: TC = 25 C 0 14 28 42 ID, Drain Current [A] 56 0.001 0.0 70 Figure 5. Capacitance Characteristics 1.5 10 VGS, Gate-Source Voltage [V] 10000 Ciss Capacitances [pF] 2. 250μs Pulse Test 0.3 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 50000 1000 Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 1 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.4 RDS(ON) [Ω], Drain-Source On-Resistance 3 Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 1 10 100 VDS, Drain-Source Voltage [V] ©2014 Fairchild Semiconductor Corporation FCP190N65F Rev. C2 6 4 2 0 1000 3 VDS = 130V VDS = 325V VDS = 520V 8 *Note: ID = 10A 0 13 26 39 52 Qg, Total Gate Charge [nC] 65 www.fairchildsemi.com FCP190N65F — N-Channel SuperFET® II FRFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 0.5 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 10A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 100 24 20 100μs 10 ID, Drain Current [A] ID, Drain Current [A] 10μs 1ms 10ms DC 1 Operation in This Area is Limited by R DS(on) *Notes: 0.1 16 12 8 o 1. TC = 25 C 4 o 0.01 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 12.0 EOSS, [μJ] 9.6 7.2 4.8 2.4 0 0 140 280 420 560 VDS, Drain to Source Voltage [V] ©2014 Fairchild Semiconductor Corporation FCP190N65F Rev. C2 700 4 www.fairchildsemi.com FCP190N65F — N-Channel SuperFET® II FRFET® MOSFET Typical Performance Characteristics (Continued) FCP190N65F — N-Channel SuperFET® II FRFET® MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve 0.5 o ZθJC(t), Thermal Response [ C/W] 1 0.1 0.2 0.1 PDM 0.05 0.02 0.01 t1 0.01 t2 *Notes: Single pulse o 0.001 -5 10 ©2014 Fairchild Semiconductor Corporation FCP190N65F Rev. C2 1. ZθJC(t) = 0.6 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FCP190N65F — N-Channel SuperFET® II FRFET® MOSFET Figure 13. Gate Charge Test Circuit & Waveform Figure 14. Resistive Switching Test Circuit & Waveforms Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2014 Fairchild Semiconductor Corporation FCP190N65F Rev. C2 6 www.fairchildsemi.com FCP190N65F — N-Channel SuperFET® II FRFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2014 Fairchild Semiconductor Corporation FCP190N65F Rev. C2 7 www.fairchildsemi.com SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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