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FDP060AN08A0 / FDB060AN08A0
N-Channel PowerTrench® MOSFET
75 V, 80 A, 6 mΩ
Features
Applications
• RDS(on) = 4.8 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
• Synchronous Rectification for ATX / Server / Telecom PSU
• QG(tot) = 73 nC ( Typ.) @ VGS = 10 V
• Battery Protection Circuit
• Low Miller Charge
• Motor drives and Uninterruptible Power Supplies
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82680
D
D
GD
S
G
TO-220
G
D2-PAK
S
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
FDP060AN08A0
FDB060AN08A0
Unit
V DSS
Drain to Source Voltage
75
V
VGS
Gate to Source Voltage
±20
V
Drain Current
ID
Continuous (TC < 127oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)
Pulsed
E AS
PD
TJ, TSTG
80
A
16
A
Figure 4
A
Single Pulse Avalanche Energy (Note 1)
350
mJ
Power dissipation
255
Derate above 25oC
Operating and Storage Temperature
W
1.7
W/oC
-55 to 175
C
o
Thermal Characteristics
oC/W
RθJC
Thermal Resistance Junction to Case, Max. TO-220, D2-PAK
RθJA
Thermal Resistance Junction to Ambient, Max. TO-220, D2-PAK (Note 2)
62
o
C/W
RθJA
Thermal Resistance Junction to Ambient, Max. D2-PAK, 1in2 copper pad area
43
o
C/W
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
1
0.58
www.fairchildsemi.com
FDP060AN08A0 / FDB060AN08A0 — N-Channel PowerTrench® MOSFET
October 2013
Device Marking
FDB060AN08A0
Device
FDB060AN08A0
Package
D2-PAK
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
FDP060AN08A0
FDP060AN08A0
TO-220
Tube
N/A
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
75
-
-
-
-
1
-
-
250
VGS = ±20V
-
-
±100
nA
VGS = VDS, ID = 250µA
V
ID = 40A, VGS = 6V
V DS = 60V
VGS = 0V
TC = 150oC
µA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
2
-
4
ID = 80A, VGS = 10V
-
0.0048
0.006
-
0.0066
0.010
ID = 80A, VGS = 10V,
TJ = 175oC
-
0.010
0.013
-
5150
-
-
800
-
pF
-
230
-
pF
nC
Ω
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
V DS = 25V, VGS = 0V,
f = 1MHz
Qg(TOT)
Total Gate Charge at 10V
VGS = 0V to 10V
Qg(TH)
Threshold Gate Charge
VGS = 0V to 2V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller” Charge
VDD = 40V
ID = 80A
Ig = 1.0mA
pF
73
95
-
10
13
nC
-
29
-
nC
-
19
-
nC
-
16
-
nC
Switching Characteristics (VGS = 10V)
tON
Turn-On Time
-
-
147
ns
Turn-On Delay Time
-
19
-
ns
tr
Rise Time
-
79
-
ns
-
37
-
ns
tf
td(ON)
V DD = 40V, ID = 80A
V GS = 10V, RGS = 3.9Ω
td(OFF)
Turn-Off Delay Time
Fall Time
-
38
-
ns
tOFF
Turn-Off Time
-
-
113
ns
Drain-Source Diode Characteristics
ISD = 80A
-
-
1.25
V
ISD = 40A
-
-
1.0
V
Reverse Recovery Time
ISD = 75A, dISD/dt = 100A/µs
-
-
37
ns
Reverse Recovered Charge
ISD = 75A, dISD/dt = 100A/µs
-
-
38
nC
V SD
Source to Drain Diode Voltage
trr
QRR
Notes:
1: Starting TJ = 25°C, L = 109µH, IAS = 80A.
2: Pulse width = 100s
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
2
www.fairchildsemi.com
FDP060AN08A0 / FDB060AN08A0 — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
150
1.0
125
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
CURRENT LIMITED
BY PACKAGE
100
75
50
25
0
0
25
50
75
100
150
125
0
175
25
50
TC , CASE TEMPERATURE (o C)
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
100
125
TC, CASE TEMPERATURE
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
75
150
175
(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x R θJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t , RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
IDM, PEAK CURRENT (A)
2000
TC = 25oC
FOR TEMPERATURES
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1000
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
VGS = 10V
100
70
10-5
10-4
10-3
10-2
10 -1
100
101
t , PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
3
www.fairchildsemi.com
FDP060AN08A0 / FDB060AN08A0 — N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
1000
500
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(I AS*R)/(1.3*RATED BVDSS - VDD) +1]
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
10µs
100µs
100
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10
10ms
DC
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
1
0.01
100
Figure 5. Forward Bias Safe Operating Area
175
175
TJ = 175o C
75
50
TJ = 25oC
TJ = -55oC
100
75
VGS = 5V
50
0
0
4.0
4.5
5.0
5.5
VGS , GATE TO SOURCE VOLTAGE (V)
VGS = 6V
125
TC = 25o C
25
25
3.5
6.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
2.5
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
DRAIN TO SOURCE ON RESISTANCE(mΩ)
1.0
1.5
2.0
Figure 8. Saturation Characteristics
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
7.0
0.5
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
7.5
VGS = 7V
VGS = 10V
150
ID, DRAIN CURRENT (A)
ID , DRAIN CURRENT (A)
Figure 6. Unclamped Inductive Switching
Capability
125
100
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
150
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
6.5
VGS = 6V
6.0
1.5
5.5
VGS = 10V
5.0
1.0
4.5
4.0
0
20
40
ID, DRAIN CURRENT (A)
60
0.5
-80
80
Figure 9. Drain to Source On Resistance vs Drain
Current
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
VGS = 10V, ID = 80A
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
4
www.fairchildsemi.com
FDP060AN08A0 / FDB060AN08A0 — N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
1.2
VGS = VDS, ID = 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
1.0
0.8
0.6
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
1.0
10
VGS , GATE TO SOURCE VOLTAGE (V)
CISS = CGS + CGD
COSS ≅ CDS + C GD
CRSS = CGD
VGS = 0V, f = 1MHz
100
0.1
1
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (o C)
200
VDD = 40V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
ID = 80A
ID = 16A
2
0
75
0
20
40
60
80
Qg, GATE CHARGE (nC)
Figure 13. Capacitance vs Drain to Source
Voltage
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
-40
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
7000
C, CAPACITANCE (pF)
1.1
0.9
-80
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1000
ID = 250µA
Figure 14. Gate Charge Waveforms for Constant
Gate Current
5
www.fairchildsemi.com
FDP060AN08A0 / FDB060AN08A0 — N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
VDS
BVDSS
tP
L
VARY tP TO OBTAIN
REQUIRED PEAK IAS
+
RG
-
VGS
VDS
IAS
VDD
VDD
DUT
tP
0V
IAS
0
0.01Ω
tAV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
VDS
VDD
Qg(TOT)
VDS
L
VGS
+
-
VGS
VGS = 10V
Qgs2
VDD
DUT
VGS = 2V
Ig(REF)
0
Qg(TH)
Qgs
Qgd
Ig(REF)
0
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
VDS
tON
tOFF
td(ON)
td(OFF)
RL
tr
VDS
90%
-
VDD
10%
0
10%
DUT
90%
VGS
VGS
0
Figure 19. Switching Time Test Circuit
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
90%
+
VGS
RGS
tf
50%
10%
PULSE WIDTH
50%
Figure 20. Switching Time Waveforms
6
www.fairchildsemi.com
FDP060AN08A0 / FDB060AN08A0 — N-Channel PowerTrench® MOSFET
Test Circuits and Waveforms
The maximum rated junction temperature, TJM , and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, PDM , in an
application.
Therefore the application’s ambient
temperature, TA (oC), and thermal resistance RθJA (oC/W)
must be reviewed to ensure that TJM is never exceeded.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
RθJA = 26.51+ 19.84/(0.262+Area) EQ.2
RθJA = 26.51+ 128/(1.69+Area) EQ.3
60
RθJA (o C/W)
(T
–T )
JM
A
P D M = ----------------------------R θ JA
80
40
(EQ. 1)
In using surface mount devices such as the TO-263
package, the environment in which it is applied will have a
significant influence on the part’s current and maximum
power dissipation ratings. Precise determination of P DM is
complex and influenced by many factors:
20
0.1
1
10
(0.645)
(6.45)
AREA, TOP COPPER AREA in2 (cm2 )
(64.5)
Figure 21. Thermal Resistance vs Mounting
Pad Area
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 21
defines the RθJA for the device as a function of the top
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.
R
θ JA
19.84
( 0.262 + Area )
(EQ. 2)
= 26.51 + -------------------------------------
Area in Inches Squared
R
θ JA
128
( 1.69 + Area )
(EQ. 3)
= 26.51 + ----------------------------------
Area in Centimeters Squared
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
7
www.fairchildsemi.com
FDP060AN08A0 / FDB060AN08A0 — N-Channel PowerTrench® MOSFET
Thermal Resistance vs. Mounting Pad Area
.SUBCKT FDP060AN08A0 2 1 3 ; rev October 2002
Ca 12 8 2.5e-9
Cb 15 14 2.1e-9
Cin 6 8 4.7e-9
DPLCAP
10
RSLC2
+
GATE
1
Lgate 1 9 5.3e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 5e-9
RLGATE
EVTEMP
RGATE + 18 22
9
20
ESLC
11
+
17
EBREAK 18
-
50
EVTHRES
+ 19 8
6
21
16
DBODY
MWEAK
MMED
MSTRO
CIN
LSOURCE
8
7
RSOURCE
RLgate 1 9 53
RLdrain 2 5 10
RLsource 3 7 50
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
DBREAK
RDRAIN
6
8
ESG
LGATE
5
51
-
Ebreak 11 7 17 18 82.1
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
12
S1A
S2A
13
8
S1B
CA
15
14
13
RBREAK
17
CB
+
EGS
-
RLSOURCE
18
EDS
-
19
VBAT
+
IT
14
+
6
8
SOURCE
3
RVTEMP
S2B
13
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 9e-4
Rgate 9 20 1.4
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 3e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
DRAIN
2
RLDRAIN
RSLC1
51
+
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
It 8 17 1
LDRAIN
5
5
8
8
RVTHRES
22
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*350),5))}
.MODEL DbodyMOD D (IS=2E-11 N=1.04 RS=1.76e-3 TRS1=2.7e-3 TRS2=1e-6
+ CJO=3.2e-9 M=5.6e-1 TT=3e-10 XTI=3.9)
.MODEL DbreakMOD D (RS=3e-1 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=1.56e-9 IS=1e-30 N=10 M=0.53)
.MODEL MmedMOD NMOS (VTO=3.6 KP=6 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.4)
.MODEL MstroMOD NMOS (VTO=4.22 KP=220 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=3 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=14 RS=0.1)
.MODEL RbreakMOD RES (TC1=9.4e-4 TC2=-9e-7)
.MODEL RdrainMOD RES (TC1=2.2e-2 TC2=6e-5)
.MODEL RSLCMOD RES (TC1=2e-3 TC2=1e-5)
.MODEL RsourceMOD RES (TC1=1e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-6e-3 TC2=-1.6e-5)
.MODEL RvtempMOD RES (TC1=-2.4e-3 TC2=1e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-8 VOFF=-5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-5 VOFF=-8)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
8
www.fairchildsemi.com
FDP060AN08A0 / FDB060AN08A0 — N-Channel PowerTrench® MOSFET
PSPICE Electrical Model
rev October 2002
template FDP060AN08A0 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=2e-11,nl=1.04,rs=1.76e-3,trs1=2.7e-3,trs2=1e-6,cjo=3.2e-9,m=5.6e-1,tt=3e-10,xti=3.9)
dp..model dbreakmod = (rs=3e-1,trs1=1e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=1.56e-9,isl=10e-30,nl=10,m=0.53)
m..model mmedmod = (type=_n,vto=3.6,kp=6,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=4.22,kp=220,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=3,kp=0.03,is=1e-30, tox=1,rs=0.1)
LDRAIN
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-8,voff=-5)
DPLCAP 5
DRAIN
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-5,voff=-8)
2
10
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-4,voff=-3.5)
RLDRAIN
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=-3.5,voff=-4)
RSLC1
51
c.ca n12 n8 = 2.5e-9
RSLC2
c.cb n15 n14 = 2.1e-9
ISCL
c.cin n6 n8 = 4.7e-9
-
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 82.1
GATE
spe.eds n14 n8 n5 n8 = 1
1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
ESG
+
LGATE
RLGATE
DBREAK
50
RDRAIN
6
8
EVTEMP
RGATE + 18 22
9
20
EVTHRES
+ 19 8
6
21
11
MWEAK
EBREAK
+
17
18
-
MMED
MSTRO
CIN
DBODY
16
8
LSOURCE
7
RSOURCE
i.it n8 n17 = 1
12
l.lgate n1 n9 = 5.3e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 5e-9
res.rlgate n1 n9 = 53
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 50
S1A
S2A
13
8
S1B
14
13
17
RBREAK
RLSOURCE
18
RVTEMP
S2B
13
CA
15
CB
+
EGS
-
EDS
-
IT
14
+
6
8
SOURCE
3
-
5
8
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
19
+
8
RVTHRES
VBAT
22
res.rbreak n17 n18 = 1, tc1=9.4e-4,tc2=-9e-7
res.rdrain n50 n16 = 9e-4, tc1=2.2e-2,tc2=6e-5
res.rgate n9 n20 = 1.4
res.rslc1 n5 n51 = 1e-6, tc1=2e-3,tc2=1e-5
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 3e-3, tc1=1e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-6e-3,tc2=-1.6e-5
res.rvtemp n18 n19 = 1, tc1=-2.4e-3,tc2=1e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/350))** 5))
}
}
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
9
www.fairchildsemi.com
FDP060AN08A0 / FDB060AN08A0 — N-Channel PowerTrench® MOSFET
SABER Electrical Model
th
JUNCTION
REV 23 October 2002
FDP060AN08A0T
CTHERM1 TH 6 9.6e-3
CTHERM2 6 5 9.7e-3
CTHERM3 5 4 9.8e-3
CTHERM4 4 3 1e-2
CTHERM5 3 2 3e-2
CTHERM6 2 TL 9e-2
RTHERM1
CTHERM1
6
RTHERM1 TH 6 3.2e-3
RTHERM2 6 5 8.1e-3
RTHERM3 5 4 2.3e-2
RTHERM4 4 3 1.2e-1
RTHERM5 3 2 1.5e-1
RTHERM6 2 TL 1.6e-1
RTHERM2
CTHERM2
5
SABER Thermal Model
SABER thermal model FDP060AN08A0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =9.6e-3
ctherm.ctherm2 6 5 =9.7e-3
ctherm.ctherm3 5 4 =9.8e-3
ctherm.ctherm4 4 3 =1e-2
ctherm.ctherm5 3 2 =3e-2
ctherm.ctherm6 2 tl =9e-2
RTHERM3
CTHERM3
4
RTHERM4
rtherm.rtherm1 th 6 =3.2e-3
rtherm.rtherm2 6 5 =8.1e-3
rtherm.rtherm3 5 4 =2.3e-2
rtherm.rtherm4 4 3 =1.2e-1
rtherm.rtherm5 3 2 =1.5e-1
rtherm.rtherm6 2 tl =1.6e-1
}
CTHERM4
3
RTHERM5
CTHERM5
2
CTHERM6
RTHERM6
tl
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
10
CASE
www.fairchildsemi.com
FDP060AN08A0 / FDB060AN08A0 — N-Channel PowerTrench® MOSFET
SPICE Thermal Model
FDP060AN08A0 / FDB060AN08A0 — N-Channel PowerTrench® MOSFET
Mechanical Dimensions
TO-220 3L
Figure 22. TO-220, Molded, 3Lead, Jedec Variation AB
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Dimension in Millimeters
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
11
www.fairchildsemi.com
FDP060AN08A0 / FDB060AN08A0 — N-Channel PowerTrench® MOSFET
Mechanical Dimensions
TO-263 2L (D2PAK)
Figure 23. 2LD, TO263, Surface Mount
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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Dimension in Millimeters
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
12
www.fairchildsemi.com
tm
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Rev. I66
©2003 Fairchild Semiconductor Corporation
FDP060AN08A0 / FDB060AN08A0 Rev. C4
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FDP060AN08A0 / FDB060AN08A0 — N-Channel PowerTrench® MOSFET
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