FDB9403-F085

FDB9403-F085 N-Channel Power Trench® MOSFET FDB9403-F085 N-Channel Power Trench® MOSFET D D 40V, 110A, 1.2mΩ Features „ Typ rDS(on) = 1mΩ at VGS = 10V, ID = 80A G „ Typ Qg(tot) = 164nC at VGS = 10V, ID = 80A G „ UIS Capability S TO-263AB FDB SERIES „ RoHS Compliant „ Qualified to AEC Q101 S Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter/alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Gate to Source Voltage Ratings 40 Units V ±20 V Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 110 Pulsed Drain Current TC = 25°C See Figure4 Single Pulse Avalanche Energy (Note 2) A 968 mJ Power Dissipation 333 W Derate above 25oC 2.22 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient -55 to + 175 oC 0.45 oC/W 43 oC/W (Note 3) Package Marking and Ordering Information Device Marking FDB9403 Device FDB9403-F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Notes: 1. Current is limited by bondwire configuration. Please see ON Semiconductor AN 9757-1 for details on test method. 2: Starting TJ = 25°C, L = 0.47mH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ©2012 Semiconductor Components Industries, LLC. September-2017, Rev. 3 1 Publication Order Number: FDB9403-F085/D Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 40V, VGS = 0V 40 - - V - - 1 μA mA nA TJ = 25oC TJ = 175oC(Note 4) - - 1 - - ±100 2.0 3.13 4.0 V - 1.0 1.2 mΩ - 1.63 1.96 mΩ VGS = ±20V On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250 uA ID = 80A, VGS= 10V TJ = 25oC TJ = 175oC(Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) V GS = 0 to 2V Qgs Threshold Gate Charge Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge VDS = 25V, VGS = 0V, f = 1MHz VDD = 20V ID = 80A - 12700 - pF - 3195 - pF - 493 - pF - 2.9 - Ω - 164 213 nC nC - 23 30 - 59 - nC - 25 - nC Switching Characteristics ton Turn-On Time - - 56 ns td(on) Turn-On Delay Time - 16 - ns tr Rise Time td(off) Turn-Off Delay Time tf toff - 19.5 - ns - 61 - ns Fall Time - 46 - ns Turn-Off Time - - 171 ns - - 0.85 0.80 V V VDD = 20V, ID = 80A, VGS = 10V, RGS = 1.5Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage Trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 35A, VGS = 0V ISD = 15A, VGS = 0V IF = 80A, dISD/dt = 100A/μs Notes: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 - 96 125 ns - 149 194 nC FDB9403-F085 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 500 1.0 I D, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 25 0 50 75 100 125 150 TC, CASE TEMPERATURE(oC) CURRENT LIMITED BY PACKAGE 400 VGS = 10V CURRENT LIMITED BY SILICON 300 200 100 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 NOTE: Refer to ON Semiconductor Application Notes AN9757 Figure 1. Normalized Power Dissipation vs Case Temperature Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance VGS = 10V I DM, PEAK CURRENT (A) 1000 100 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I2 150 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 0 10 1 10 FDB9403-F085 N-Channel Power Trench® MOSFET Typical Characteristics 1000 I AS, AVALANCHE CURRENT (A) 1000 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(on) 1 0.1 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 1ms 10ms DC 150 TJ = o TJ = -55 C 50 0 2 3 4 5 V GS , GATE TO SOURCE VOLTAGE (V) 0.1 1 10 100 1000 10000 200 100 VGS = 0 V TJ = 175 oC T J = 25 oC 10 1 6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 8. Forward Diode Characteristics 250 I D, DRAIN CURRENT (A) 250 200 VGS 15V Top 10V 6V 5.5V 5 V Bottom 150 100 0 0.0 0.01 tAV, TIME IN AVALANCHE (ms) Figure 7. Transfer Characteristics 50 STARTING TJ = 150oC Figure 6. Unclamped Inductive Switching Capability 175oC TJ = 25oC 10 NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515 PULSE DURATION = 80μ s DUTY CYCLE = 0.5% MAX VDD = 5V 100 STARTING TJ = 25oC 1 1E-3 IS, REVERSE DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 200 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 100 10 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area I D, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10000 5V 80μs PULSE WIDTH Tj=25oC 0.2 0.4 0.6 0.8 1.0 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics 200 150 5V 100 50 0 0.0 VGS Top 15V5.5V 10V 6V 5.5V 5V Bottom 80μs PULSE WIDTH Tj=175oC 0.2 0.4 0.6 0.8 1.0 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 4 FDB9403-F085 N-Channel Power Trench® MOSFET Typical Characteristics ID = 80A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on) , DRAIN TO SOURCE ON-RESISTANCE ( Ω) 10 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 8 6 4 TJ = 175oC 2 0 TJ = 25oC 2 6 8 4 VGS, GATE TO SOURCE VOLTAGE (V) 1.0 ID = 80A VGS = 10V 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 ID = 1mA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.2 1.2 VGS = VDS ID = 250μ A 1.0 1.1 0.8 1.0 0.6 0.9 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) Ciss 10000 Coss 1000 Crss 100 1 10 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 15. Capacitance vs Drain to Source Voltage -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs Junction Temperature V GS, GATE TO SOURCE VOLTAGE(V) 100000 f = 1MHz VGS = 0V 0.8 -80 200 Figure 13. Normalized Gate Threshold Voltage vs Temperature CAPACITANCE (pF) 1.4 Figure 12. Normalized Rdson vs Junction Temperature 1.2 100 0.1 PULSE DURATION = 80μ s DUTY CYCLE = 0.5% MAX 1.6 10 Figure 11. Rdson vs Gate Voltage 0.4 -80 1.8 10 ID = 80A 8 VDD = 16V VDD = 20V VDD = 24V 6 4 2 0 0 50 100 150 Q g, GATE CHARGE(nC) 200 Figure 16. Gate Charge vs Gate to Source Voltage www.onsemi.com 5 FDB9403-F085 N-Channel Power Trench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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