FDC6331L
Integrated Load Switch
Features
General Description
• –2.8 A, –8 V. RDS(ON) = 55 mΩ @ V GS = –4.5 V
RDS(ON) = 70 mΩ @ V GS = –2.5 V
RDS(ON) = 100 mΩ @ V GS = –1.8 V
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 2.8A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) that drives a large P-Channel
power MOSFET (Q2) in one tiny SuperSOTT M-6
package.
• Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
• High performance trench technology for extremely
low RDS(ON)
Applications
• Load switch
• Power management
D2
Equivalent Circuit
Q2
S1
Vin,R1
4
3
Vout,C1
ON/OFF
5
2
Vout,C1
R1,C1
6
1
R2
D1
IN
SuperSOT
Pin 1
-6
OUT
Q1
G2
TM
+ V
–
DROP
S2
G1
ON/OFF
See Application Circuit
SuperSOT™-6
Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol
V IN
Parameter
Maximum Input Voltage
V ON/OFF
High level ON/OFF voltage range
ILoad
Load Current
– Continuous
(Note 1)
– Pulsed
Ratings
±8
Units
V
–0.5 to 8
V
–2.8
A
–9
PD
Maximum Power Dissipation
TJ , TSTG
Operating and Storage Junction Temperature Range
(Note 1)
0.7
W
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
180
°C/W
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1)
60
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.331
FDC6331L
7’’
8mm
3000 units
2001 Fairchild Semiconductor Corporation
FDC6331L Rev C(W)
FDC6331L
August 2001
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV IN
Vin Breakdown Voltage
V ON/OFF = 0 V, ID = –250 µA
ILoad
Zero Gate Voltage Drain Current
V IN = 6.4 V,
–1
µA
IFL
Leakage Current, Forward
V ON/OFF = 0 V, V IN = 8 V
–100
nA
IRL
Leakage Current, Reverse
V ON/OFF = 0 V, V IN = –8 V
100
nA
1.5
55
70
100
4
5
V
On Characteristics
8
V
V ON/OFF = 0 V
(Note 2)
V ON/OFF (th)
RDS(on)
Gate Threshold Voltage
Static Drain–Source
On–Resistance (Q2)
RDS(on)
Static Drain–Source
On–Resistance (Q1)
V IN = V ON/OFF, ID = –250 µA
V IN = 4.5 V,
ID = –2.8A
V IN = 2.5 V,
ID = –2.5 A
V IN = 1.8 V,
ID = –2.0 A
V IN = 4.5 V,
ID = 0.4A
V IN = 2.7 V,
ID = 0.2 A
0.4
0.9
34
45
64
3.1
3.8
mΩ
Ω
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
V SD
Drain–Source Diode Forward
Voltage
V ON/OFF = 0 V, IS = –0.6 A
(Note 2)
–0.6
A
–1.2
V
Notes:
1. R θJ A is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R θJC is guar anteed by design while R θJ A is determined by the user’s board design.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDC6331L Load Switch Application Circuit
IN
Q2
OUT
C1
R1
Q1
LOAD
ON/OFF
R2
External Component Recommendation:
For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030.
FDC6331L Rev C(W)
FDC6331L
Electrical Characteristics
0.4
V IN = -1.8V
V ON/OFF = -1.5V -8V
PW = 300us, D < 2%
0.3
V IN = -2.5V
V ON/OFF = -1.5V -8V
PW = 300us, D < 2%
0.35
T J = 125OC
0.3
0.25
-V DROP, (V)
-V DROP, (V)
FDC6331L
0.4
0.35
TJ = 25 OC
0.2
0.15
0.2
T J = 25OC
0.15
0.1
0.1
0.05
0.05
0
TJ = 125 OC
0.25
0
0
1
2
3
4
5
6
0
1
2
3
-I L, (A)
4
5
6
-I L, (A)
Figure 1. Conduction Voltage Drop
Variation with Load Current.
Figure 2. Conduction Voltage Drop
Variation with Load Current.
0.4
0.15
RDS(ON) , ON-RESISTANCE ( )
V IN = -4.5V
V ON/OFF = -1.5V -8V
PW = 300us, D < 2%
0.35
-V DROP, (V)
0.3
0.25
TJ = 125 OC
0.2
0.15
TJ = 25OC
0.1
0.05
IL = -1A
V O N / O F F = -1.5V -8V
PW = 300us, D < 2%
0.125
0.1
0.075
T J = 125OC
0.05
TJ = 25OC
0.025
0
0
1
2
3
4
5
6
0
-I L, (A)
1
Figure 3. Conduction Voltage Drop
Variation with Load Current.
2
3
4
-VIN , INPUT VOLTAGE (V)
5
Figure 4. On-Resistance Variation
With Input Voltage
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
R θJA(t) = r(t) + RθJA
R θJA = 156 °C/W
0.2
P(pk)
0.1
0.1
t1
t2
T J - TA = P * RθJA(t)
Duty Cycle, D = t 1 / t2
0.05
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
FDC6331L Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
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SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
STAR*POWER is used under license
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4