Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDD24AN06LA0_F085
N-Channel Logic Level PowerTrench® MOSFET
60V, 36A, 24mΩ
Features
Applications
• r DS(ON) = 20mΩ (Typ.), VGS = 5V, ID = 36A
• Motor / Body Load Control
• Qg(tot) = 16nC (Typ.), VGS = 5V
• ABS Systems
• Low Miller Charge
• Powertrain Management
• Low QRR Body Diode
• Injection Systems
• UIS Capability (Single Pulse and Repetitive Pulse)
• DC-DC converters and Off-line UPS
• Qualified to AEC Q101
• Distributed Power Architectures and VRMs
• RoHS Compliant
• Primary Switch for 12V and 24V systems
Formerly developmental type 83547
DRAIN (FLANGE)
GATE
D
G
SOURCE
TO-252AA
FDD SERIES
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
V DSS
Drain to Source Voltage
Parameter
Ratings
60
Units
V
VGS
Gate to Source Voltage
±20
V
Drain Current
ID
Continuous (TC = 25oC, VGS = 10V)
40
A
Continuous (TC = 25oC, VGS = 5V)
36
A
Continuous (TC = 100oC, VGS = 5V)
25
A
Continuous (TA = 25oC, VGS = 5V, RθJA = 52oC/W)
7.1
A
Pulsed
E AS
PD
TJ, TSTG
Single Pulse Avalanche Energy (Note 1)
Figure 4
A
32
mJ
Power dissipation
75
W
Derate above 25oC
0.5
W/oC
Operating and Storage Temperature
o
C
-55 to 175
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case TO-252
2.0
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-252
100
o
C/W
RθJA
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
52
o
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2011 Fairchild Semiconductor Corporation
FDD24AN06LA0_F085 Rev. C1
www.fairchildsemi.com
FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench® MOSFET
August 2011
Device Marking
FDD24AN06LA0
Device
FDD24AN06LA0
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
60
-
-
-
V
-
1
-
-
250
µA
VGS = ±20V
-
-
±100
nA
V GS = VDS, ID = 250µA
1
-
2
V
ID = 40A, VGS = 10V
-
0.016
0.019
ID = 36A, VGS = 5V
-
0.020
0.024
ID = 36A, VGS = 5V,
TJ = 175oC
-
0.047
0.056
-
1850
-
-
180
-
pF
-
75
-
pF
16
21
nC
-
1.8
2.4
nC
-
6.3
-
nC
-
4.5
-
nC
-
5.0
-
nC
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
V DS = 50V
VGS = 0V
TC = 150oC
On Characteristics
VGS(TH)
rDS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Ω
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
V DS = 25V, VGS = 0V,
f = 1MHz
Qg(TOT)
Total Gate Charge at 5V
VGS = 0V to 5V
Qg(TH)
Threshold Gate Charge
VGS = 0V to 1V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller” Charge
VDD = 30V
ID = 36A
Ig = 1.0mA
pF
Switching Characteristics (VGS = 5V)
tON
Turn-On Time
-
-
195
ns
td(ON)
Turn-On Delay Time
-
12
-
ns
tr
Rise Time
td(OFF)
Turn-Off Delay Time
-
118
-
ns
-
26
-
tf
ns
Fall Time
-
41
-
tOFF
ns
Turn-Off Time
-
-
101
ns
V DD = 30V, ID = 36A
VGS = 5V, RGS = 9.1Ω
Drain-Source Diode Characteristics
ISD = 36A
-
-
1.25
V
ISD = 18A
-
-
1.0
V
Reverse Recovery Time
ISD = 36A, dISD/dt = 100A/µs
-
-
34
ns
Reverse Recovered Charge
ISD = 36A, dISD/dt = 100A/µs
-
-
30
nC
V SD
Source to Drain Diode Voltage
trr
QRR
Notes:
1: Starting T J = 25°C, L = 80µH, I AS = 28A.
©2011 Fairchild Semiconductor Corporation
FDD24AN06LA0_F085 Rev. C1
www.fairchildsemi.com
FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench® MOSFET
Package Marking and Ordering Information
50
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
40
VGS = 10V
30
VGS = 5V
20
10
0.2
0
25
0
50
75
100
150
125
0
175
25
50
75
TC , CASE TEMPERATURE (oC)
100
125
150
175
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10 -4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
IDM, PEAK CURRENT (A)
400
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
CURRENT AS FOLLOWS:
VGS = 10V
100
30
175 - TC
I = I25
150
VGS = 5V
10 -5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2011 Fairchild Semiconductor Corporation
FDD24AN06LA0_F085 Rev. C1
www.fairchildsemi.com
FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
1000
100
100
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
10µs
100µs
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1
10ms
DC
SINGLE PULSE
TJ = MAX RATED
TC = 25 oC
10
STARTING TJ = 150oC
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
0.001
0.01
0.1
1
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
60
60
VGS = 10V
ID, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
45
30
TJ = 175oC
TJ = 25 oC
15
VGS = 5V
VGS = 3.5V
45
30
VGS = 3V
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TJ = -55o C
0
TC = 25oC
0
1
3
2
4
0
1.0
0.5
VGS , GATE TO SOURCE VOLTAGE (V)
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
50
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE (mΩ)
100
10
tAV, TIME IN AVALANCHE (ms)
Figure 5. Forward Bias Safe Operating Area
ID , DRAIN CURRENT (A)
STARTING TJ = 25oC
40
ID = 40A
30
20
ID = 5A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
VGS = 10V, ID = 40A
0
10
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
©2011 Fairchild Semiconductor Corporation
FDD24AN06LA0_F085 Rev. C1
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
www.fairchildsemi.com
FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
1.10
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.25
NORMALIZED GATE
THRESHOLD VOLTAGE
VGS = VDS, ID = 250µA
1.00
0.75
0.50
ID = 250µA
1.05
1.00
0.95
0.25
0.90
-80
-40
0
40
80
120
160
200
-80
-40
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
80
120
160
200
10
VGS , GATE TO SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
40
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
2500
CISS = CGS + C GD
1000
COSS ≅ CDS + C GD
CRSS = CGD
100
40
0
TJ , JUNCTION TEMPERATURE (oC)
VGS = 0V, f = 1MHz
1
0.1
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
©2011 Fairchild Semiconductor Corporation
FDD24AN06LA0_F085 Rev. C1
60
VDD = 30V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
ID = 36A
ID = 5A
2
0
0
5
10
15
20
Qg, GATE CHARGE (nC)
25
30
Figure 14. Gate Charge Waveforms for Constant
Gate Current
www.fairchildsemi.com
FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
VDS
BVDSS
tP
L
VARY tP TO OBTAIN
+
RG
REQUIRED PEAK IAS
-
VGS
VDS
IAS
VDD
VDD
DUT
tP
0V
IAS
0
0.01Ω
tAV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
VDS
VDD
Qg(TOT)
VDS
L
VGS
+
-
VGS
VGS = 5V
Qgs2
VDD
DUT
VGS = 1V
Ig(REF)
0
Qg(TH)
Qgs
Qgd
Ig(REF)
0
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
VDS
tON
tOFF
td(ON)
td(OFF)
RL
tr
VDS
90%
-
VDD
10%
10%
0
DUT
90%
VGS
VGS
0
Figure 19. Switching Time Test Circuit
©2011 Fairchild Semiconductor Corporation
FDD24AN06LA0_F085 Rev. C1
90%
+
VGS
RGS
tf
50%
10%
PULSE WIDTH
50%
Figure 20. Switching Time Waveforms
www.fairchildsemi.com
FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench® MOSFET
Test Circuits and Waveforms
(T
–T )
JM
A
P D M = ----------------------------R θ JA
(EQ. 1)
In using surface mount devices such as the TO-252
package, the environment in which it is applied will have a
significant influence on the part’s current and maximum
power dissipation ratings. Precise determination of PDM is
complex and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
125
RθJA = 33.32+ 23.84/(0.268+Area) EQ.2
RθJA = 33.32+ 154/(1.73+Area) EQ.3
100
RθJA (o C/W)
The maximum rated junction temperature, TJM , and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, PDM , in an
application.
Therefore the application’s ambient
temperature, TA (oC), and thermal resistance RθJA (oC/W)
must be reviewed to ensure that TJM is never exceeded.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
75
50
25
0.01
(0.0645)
0.1
(0.645)
1
(6.45)
10
(64.5)
AREA, TOP COPPER AREA in2 (cm2 )
Figure 21. Thermal Resistance vs Mounting
Pad Area
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 21
defines the RθJA for the device as a function of the top
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.
R
θ JA
23.84
( 0.268 + Area )
= 33.32 + -------------------------------------
(EQ. 2)
Area in Inches Squared
R
θ JA
154
( 1.73 + Area )
= 33.32 + ----------------------------------
(EQ. 3)
Area in Centimeters Squared
©2011 Fairchild Semiconductor Corporation
FDD24AN06LA0_F085 Rev. C1
www.fairchildsemi.com
FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench® MOSFET
Thermal Resistance vs. Mounting Pad Area
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
PDP SPM™
FlashWriter® *
2Cool™
The Power Franchise®
The Right Technology for Your Success™
FPS™
Power-SPM™
AccuPower™
®
F-PFS™
PowerTrench®
Auto-SPM™
®
PowerXS™
FRFET
AX-CAP™*
Global Power ResourceSM
Programmable Active Droop™
BitSiC®
TinyBoost™
Build it Now™
Green FPS™
QFET®
TinyBuck™
CorePLUS™
Green FPS™ e-Series™
QS™
TinyCalc™
CorePOWER™
Gmax™
Quiet Series™
TinyLogic®
CROSSVOLT™
GTO™
RapidConfigure™
TINYOPTO™
CTL™
IntelliMAX™
™
TinyPower™
Current Transfer Logic™
ISOPLANAR™
TinyPWM™
Saving our world, 1mW/W/kW at a time™
DEUXPEED®
MegaBuck™
TinyWire™
Dual Cool™
SignalWise™
MICROCOUPLER™
TranSiC®
EcoSPARK®
SmartMax™
MicroFET™
TriFault Detect™
EfficentMax™
SMART START™
MicroPak™
TRUECURRENT®*
ESBC™
SPM®
MicroPak2™
μSerDes™
STEALTH™
MillerDrive™
®
SuperFET®
MotionMax™
SuperSOT™-3
Motion-SPM™
Fairchild®
UHC®
SuperSOT™-6
mWSaver™
Fairchild Semiconductor®
Ultra FRFET™
SuperSOT™-8
OptiHiT™
FACT Quiet Series™
UniFET™
SupreMOS®
OPTOLOGIC®
FACT®
VCX™
OPTOPLANAR®
SyncFET™
FAST®
®
VisualMax™
Sync-Lock™
FastvCore™
XS™
®*
FETBench™
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I55
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
1
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com