FDD3680

FDD3680 FDD3680 100V N-Channel PowerTrench MOSFET Features General Description • 25 A, 100 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. RDS(ON) = 46 mΩ @ V GS = 10 V RDS(ON) = 51 mΩ @ V GS = 6 V • Low gate charge (38 nC typical) • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. • High performance trench technology for extremely low RDS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • High power and current handling capability. D D G G S TO-252 S Absolute Maximum Ratings Symbol Parameter V DSS Drain-Source Voltage V GSS Gate-Source Voltage ID Drain Current – Continuous Drain Current – Pulsed PD T A=25oC unless otherwise noted (Note 1) Units 100 V ±20 25 V A 100 Maximum Power Dissipation TJ , TSTG Ratings (Note 1) 68 (Note 1a) 3.8 (Note 1b) 1.6 W –55 to +175 °C (Note 1) 2.2 °C/W (Note 1b) 96 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJ C Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD3680 FDD3680 13’’ 16mm 2500 units 2001 Semiconductor Components Industries, LLC. November-2017, Rev. 3 Publication Order Number: FDD3680/D Symbol Parameter Test Conditions Drain-Source Avalanche Ratings WDSS IAR TA = 25°C unless otherwise noted Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Min Typ Max Units (Note 1) V DD = 50 V, ID = 6.1 A 245 mJ 6.1 A Off Characteristics ∆BV DSS ∆TJ IDSS Drain–Source Breakdown V GS = 0 V, ID = 250 µA Voltage Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current V DS = 80 V, V GS = 0 V IGSSF Gate–Body Leakage, Forward V GS = 20 V, V DS = 0 V 100 µA nA IGSSR Gate–Body Leakage, Reverse V GS = –20 V V DS = 0 V –100 nA ID = 250 µA BV DSS On Characteristics 100 V –101 mV/°C 10 (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS , ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C ID(on) gFS On–State Drain Current V GS = 10 V, V GS = 10 V, V GS = 6 V, V GS = 10 V, ID = 6.1 A ID = 6.1 A, TJ = 125°C ID = 5.8 A V DS = 5 V Forward Transconductance V DS = 5 V, ID = 6.1 A V DS = 50 V, f = 1.0 MHz V GS = 0 V, 2 2.4 4 –6.5 32 61 34 V mV/°C 46 92 51 25 mΩ 25 A S 1735 pF 176 pF 53 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) V DD = 50 V, V GS = 10 V, 14 25 ns 8.5 17 ns Turn–Off Delay Time 63 94 ns tf Turn–Off Fall Time 21 34 ns Qg Total Gate Charge 38 53 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge V DS = 50 V, V GS = 10 V ID = 1 A, RGEN = 10 Ω ID = 6.1 A, 8.1 nC 9.2 nC Drain–Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = 2.9 A (Note 2) Voltage 0.73 2.9 A 1.3 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while Rθ CA is determined by the user's board design. b) RθJA= 96 oC/W on a minimum mounting pad. a) RθJA= 40oC/ W when mounted on a 1in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% www.onsemi.com 2 FDD3680 Electrical Characteristics FDD3680 Typical Characteristics 1.8 40 5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID , DRAIN-SOURCE CURRENT (A) VGS = 10V 4.5V 30 4V 20 10 3.5V 1.6 VGS =4.0V 1.4 4.5V 5.0V 1.2 6.0 V10V 1 0.8 0 0 2 4 0 6 10 20 Figure 1. On-Region Characteristics. 50 60 0.12 ID = 6.1A VGS = 10V 2.2 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2.6 1.8 1.4 1 0.6 0.2 ID = 3.0A 0.08 o TA = 125 C 0.04 o TA = 25 C 0 -50 -25 0 25 50 75 100 125 150 175 2 4 o 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) T J, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 40 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS =5V ID , DRAIN CURRENT (A) 30 ID, DRAIN CURRENT (A) VD S, DRAIN-SOURCE VOLTAGE (V) 30 o 125 C 20 o TA = -55 C o 25 C 10 10 o TA = 125 C 1 o 25 C o -55 C 0.1 0.01 0.001 0 0 1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDD3680 Typical Characteristics 3000 ID = 6.1A f = 1MHz VGS = 0 V VD S = 15V 30V 8 2500 50V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 2000 CISS 1500 1000 500 0 COSS 0 0 5 10 15 20 25 30 35 40 0 20 Q g, GATE CHARGE (nC) 60 80 100 Figure 8. Capacitance Characteristics. 40 100 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 1000 100µs 1ms 10ms 100ms 10 1s 1 10s VGS = 10V SINGLE PULSE o RθJ A = 96 C/W 0.1 DC o TA = 25 C 0.01 0.1 1 10 100 SINGLE PULSE RθJ A = 96°C/W TA = 25°C 30 20 10 0 0.1 1000 1 VDS , DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1 , TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. ID, DRAIN CURRENT (A) CRSS Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θJA(t) = r(t) + R θJA RθJA = 96°C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com