FDD4685-F085

FDD4685-F085 P-Channel PowerTrench® MOSFET FDD4685-F085 P-Channel PowerTrench® MOSFET -40 V, -32 A, 35 mΩ Features  Typical RDS(on) = 23 m at VGS = -10V, ID = -8.4 A  Typical RDS(on) = 30 m at VGS = -4.5V, ID = -7 A  Typical Qg(tot) = 19 nC at VGS = -5V, ID = -8.4 A  UIS Capability D  RoHS Compliant G  Qualified to AEC Q101 S Applications  Inverter D-PAK TO-252 (TO-252)  Power Supplies MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings -40 Units V ±20 V Gate-to-Source Voltage Drain Current - Continuous (TC < 90°C, VGS=10) (Note 1) Pulsed Drain Current -32 A See Figure 4 Single Pulse Avalanche Energy (Note 2) 121 Power Dissipation Derate Above 25oC TJ, TSTG Operating and Storage Temperature RJC Thermal Resistance, Junction to Case RJA Maximum Thermal Resistance, Junction to Ambient mJ 83 W 0.56 W/oC -55 to + 175 oC 1.8 oC/W 40 oC/W (Note 3) Package Marking and Ordering Information Device Marking FDD4685 Device FDD4685-F085 Package D-PAK(TO-252) Reel Size 13” Tape Width 12mm Quantity 2500units Notes: 1. Current is limited by bondwire configuration. 2. Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. 3. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. 4. A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially announced in Aug 2014. ©2016 Semiconductor Components Industries, LLC. September-2017,Rev.2 Publication Order Number: FDD4685-F085/D Symbol Parameter Test Conditions Min. Typ. Max. Units -40 - - V - -33 - mV/oC Off Characteristics BVDSS Drain-to-Source Breakdown Voltage ID = -250A, VGS = 0V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = -250μA, referenced to 25oC IDSS Drain-to-Source Leakage Current VDS = -32V - - -1 A IGSS Gate-to-Source Leakage Current VGS = ±20V - - ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250A -1 -1.6 -3 V VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250μA, referenced to 25°C - 4.9 - mV/oC ID = -8.4A, VGS= -10V - 23 27 RDS(on) Drain to Source On Resistance ID = -7A, VGS= -4.5V - 30 35 ID = -8.4A, VGS= -10V, TJ = 150oC - 38 45 ID = –8.4A, VDS = –5V - 23 - VDS = -20V, VGS = 0V, f = 1MHz - 1790 2380 pF - 260 345 pF - 140 205 pF - 4 -  - 19 27 nC gFS Forward Transconductance m s Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg(ToT) Total Gate Charge Qgs Gate-to-Source Gate Charge Qgd Gate-to-Drain “Miller“ Charge f = 1MHz VDD = -20V, VGS = -5V, ID = -8.4A - 5.6 - nC - 6.1 - nC Switching Characteristics td(on) Turn-On Delay tr Rise Time td(off) Turn-Off Delay tf Fall Time VDD = -20V, ID = -8.4A, VGS = -10V, RGEN = 6 - 8 16 ns - 15 27 ns - 34 55 ns - 14 26 ns - -0.85 -1.2 V - 30 45 ns - 31 47 nC Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD = -8.4A, VGS = 0V ISD = -8.4A, dISD/dt = 100A/s www.onsemi.com 2 FDD4685-F085 P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. Figure 1. Normalized Power Dissipation vs. Case Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 3. Normalized Maximum Transient Thermal Impedance Figure 4. Peak Current Capability www.onsemi.com 3 FDD4685-F085 P-Channel PowerTrench® MOSFET Typical Characteristics Figure 5. Forward Bias Safe Operating Area NOTE: Refer to ON SemiconductorApplication Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics Figure 9. Drain to Source On-Resistance Variation vs. Gate to Source Voltage Figure 10. Normalized Drain to Source On Resistance vs. Junction Temperature www.onsemi.com 4 FDD4685-F085 P-Channel PowerTrench® MOSFET Typical Characteristics Figure 11. Normalized Gate Threshold Voltage vs. Junction Temperature Figure 12. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature Figure 13. Capacitance vs. Drain to Source Voltage Figure 14. Gate charge vs. Gate to Source Voltage www.onsemi.com 5 FDD4685-F085 P-Channel PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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