FDD4685

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD4685 40V P-Channel PowerTrench® MOSFET –40V, –32A, 27mΩ Features General Description „ Max rDS(on) = 27mΩ at VGS = –10V, ID = –8.4A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application. „ Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –7A „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant Application „ Inverter „ Power Supplies S D G S G D -PA K TO -2 52 (TO -252) D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous(Package Limited) ID TC= 25°C V TC= 25°C (Note 1) –40 -Continuous TA= 25°C (Note 1a) –8.4 A –100 (Note 3) Power Dissipation TC= 25°C Power Dissipation TJ, TSTG ±20 –32 -Pulsed PD Units V -Continuous(Silicon Limited) Drain-Source Avalanche Energy EAS Ratings –40 121 69 (Note 1a) Operating and Storage Junction Temperature Range 3 –55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.8 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD4685 ©2006 Fairchild Semiconductor Corporation FDD4685 Rev. 1.3 Device FDD4685 Package D-PAK(TO-252) 1 Reel Size 13’’ Tape Width 16mm Quantity 2500 units www.fairchildsemi.com FDD4685 40V P-Channel PowerTrench® MOSFET March 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient –40 V ID = –250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = –32V, VGS = 0V –1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V ±100 nA –3 V mV/°C –33 On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250µA, referenced to 25°C 4.9 VGS = –10V, ID = –8.4A 23 27 rDS(on) Static Drain to Source On Resistance VGS = –4.5V, ID = –7A 30 35 VGS = –10V, ID = –8.4A, TJ=125°C 33 42 VDS = –5V, ID = –8.4A 23 gFS Forward Transconductance –1 –1.6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = –20V, VGS = 0V, f = 1MHz 1790 2380 pF 260 345 pF 140 205 pF Ω f = 1MHz 4 VDD = –20V, ID = –8.4A VGS = –10V, RGEN = 6Ω 8 16 ns 15 27 ns 34 55 ns 14 26 ns 19 27 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD =–20V, ID = –8.4A VGS = –5V 5.6 nC 6.1 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = –8.4A (Note 2) IF = –8.4A, di/dt = 100A/µs –0.85 –1.2 V 30 45 ns 31 47 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper b. 96°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 40V, VGS = 10V. FDD4685 Rev. 1.3 2 www.fairchildsemi.com FDD4685 40V P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 80 -ID, DRAIN CURRENT (A) 3.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 VGS = -6V VGS = -10V 60 VGS = -4.5V VGS = -4V 40 20 0 0 VGS = -3V 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4 VGS = -4.5V 1.8 VGS = -6V 1.4 0.6 1.2 1.0 0.8 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 40 TJ = 25oC TJ = 150oC TJ = -55oC 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 6 Figure 5. Transfer Characteristics FDD4685 Rev. 1.3 100 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 50 TJ = 125oC 40 30 TJ = 25oC 2 3 4 5 6 7 8 9 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 60 0 80 60 20 150 100 20 20 40 60 -ID, DRAIN CURRENT(A) ID = -8.4A Figure 3. Normalized On Resistance vs Junction Temperature 80 0 70 ID =-8.4A VGS = -10V 1.4 0.6 -50 VGS = -10V 1.0 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = -4V 2.2 Figure 1. On Region Characteristics 1.8 VGS = -3V 2.6 40 VGS = 0V 10 TJ = 150oC TJ = 25oC 1 TJ = -55oC 0.1 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD4685 40V P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 4 10 VDD = -10V Ciss CAPACITANCE (pF) 8 VDD = -20V 6 VDD = -30V 4 2 0 3 10 Coss 2 10 Crss f = 1MHz VGS = 0V 1 0 10 20 30 Qg, GATE CHARGE(nC) 10 0.1 40 Figure 7. Gate Charge Characteristics 50 Figure 8. Capacitance vs Drain to Source Voltage 10 9 8 7 6 5 50 TJ = 4 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT(A) 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 25oC 3 TJ = 125oC 2 40 VGS = -10V 30 20 Limited by Package VGS = -4.5V 10 o RθJC = 1.8 C/W 1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 0 100 P(PK), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 100us 10 1ms 0.1 10ms 1 DC 10 100 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDD4685 Rev. 1.3 100 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 SINGLE PULSE TJ = MAX RATED TC = 25OC 75 o 100 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 50 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 1 25 300 FOR TEMPERATURES 250 VGS = -10V 200 ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 150 – T c ----------------------125 Tc = 25oC 100 SINGLE PULSE 50 -3 10 -2 10 -1 10 t, PULSE WIDTH (s) 0 1 10 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD4685 40V P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 0.01 1E-3 -5 10 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDD4685 Rev. 1.3 5 www.fairchildsemi.com FDD4685 40V P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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