FDD770N15A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD770N15A N-Channel PowerTrench® MOSFET 150 V, 18 A, 77 mΩ Features Description • RDS(on) = 61 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • High Performance Trench Technology for Extremely Low RDS(on) Applications • High Power and Current Handling Capability • DC to DC Converters • RoHS Compliant • Synchronous Rectification for Server / Telecom PSU • Fast Switching Speed • Battery Charger • AC motor drives and Uninterruptible Power Supplies • Off-line UPS D D G S G D-PAK S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt FDD770N15A 150 - DC ±20 - AC (f > 1 Hz) - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Pulsed V ±30 18 A 11.4 (Note 1) 36 A (Note 2) 31.7 mJ 6.0 V/ns (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL Unit V - Derate Above 25oC 56.8 W 0.46 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FDD770N15A RθJC Thermal Resistance, Junction to Case, Max. 2.2 RθJA Thermal Resistance, Junction to Ambient, Max. 87 ©2012 Fairchild Semiconductor Corporation FDD770N15A Rev. 1.2 1 Unit o C/W www.fairchildsemi.com FDD770N15A — N-Channel PowerTrench® MOSFET April 2015 Part Number FDD770N15A Top Mark FDD770N15A Package DPAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 150 - - V - 0.0824 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, Referenced to 25oC VDS = 120 V, VGS = 0 V - - 1 VDS = 120 V, VGS = 0 V, TC = 125oC - - 500 VGS = ±20 V, VDS = 0 V - - ±100 2.0 - 4.0 V - 61 77 mΩ - 20 - S - 575 765 pF - 64 85 pF - 3.9 6 pF - 113 - pF - 8.4 11 nC - 2.7 - nC - 1.8 - nC - 5.7 - V - 6.9 - nC μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 12 A VDS = 10 V, ID = 12 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge Vplateau Gate Plateau Volatge Qsync Total Gate Charge Sync. VDS = 0 V, ID = 6 A Qoss Output Charge VDS = 37.5 V, VGS = 0 V - 14 - nC ESR Equivalent Series Resistance (G-S) f = 1 MHz - 0.5 - Ω - 10.3 30.6 ns - 3.1 16.2 ns - 15.8 41.6 ns - 2.8 15.6 ns VDS = 75 V, VGS = 0 V, f = 1 MHz VDS = 75 V, VGS = 0 V VDS = 75 V, ID = 12 A, VGS = 10 V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 75 V, ID = 12 A, VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 18 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 36 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 12 A - - 1.25 V trr Reverse Recovery Time 56.4 - ns Qrr Reverse Recovery Charge VGS = 0 V, VDD = 75 V, ISD = 12 A, dIF/dt = 100 A/μs - 109 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 3 mH, IAS = 4.6 A, starting TJ = 25°C. 3. ISD ≤ 12 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2012 Fairchild Semiconductor Corporation FDD770N15A Rev. 1.2 2 www.fairchildsemi.com FDD770N15A — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 50 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 10 *Notes: 1. VDS = 10V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 100 10 o 150 C o 25 C o -55 C *Notes: 1. 250μs Pulse Test 1 o 2. TC = 25 C 0.5 0.1 1 VDS, Drain-Source Voltage[V] 1 7 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 VGS, Gate-Source Voltage[V] 100 0.08 IS, Reverse Drain Current [A] 0.09 VGS = 10V 0.07 VGS = 20V 0.06 o 150 C 10 o 25 C *Notes: 1. VGS = 0V o 0.05 *Note: TC = 25 C 0 10 20 30 ID, Drain Current [A] 40 1 0.4 50 Figure 5. Capacitance Characteristics 2. 250μs Pulse Test 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] 1000 Ciss Capacitances [pF] 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.10 RDS(ON) [Ω], Drain-Source On-Resistance 3 100 Coss *Note: 1. VGS = 0V 2. f = 1MHz 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 1 10 VDS, Drain-Source Voltage [V] ©2012 Fairchild Semiconductor Corporation FDD770N15A Rev. 1.2 VDS = 30V VDS = 75V VDS = 120V 8 6 4 2 Crss 0 100 200 3 *Note: ID = 12A 0 2 4 6 8 Qg, Total Gate Charge [nC] 10 www.fairchildsemi.com FDD770N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.4 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 1.6 1.2 0.8 *Notes: 1. VGS = 10V 2. ID = 12A 0.4 -80 160 Figure 9. Maximum Safe Operating Area -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 10. Maximum Drain Current vs. Case Temperature 60 20 10 100μs 1 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] ID, Drain Current [A] 2.0 1ms 10ms 100ms DC SINGLE PULSE 0.1 o TC = 25 C 15 VGS = 10V 10 5 o TJ = 150 C o o RθJC = 2.2 C/W RθJC = 2.2 C/W 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 200 Figure 11. Eoss vs. Drain to Source Voltage 20 IAS, AVALANCHE CURRENT (A) 0.6 EOSS, [μJ] 150 Figure 12. Unclamped Inductive Switching Capability 0.8 0.4 0.2 0.0 50 75 100 125 o TC, Case Temperature [ C] 0 25 50 75 100 125 VDS, Drain to Source Voltage [V] ©2012 Fairchild Semiconductor Corporation FDD770N15A Rev. 1.2 10 TJ = 25 oC TJ = 125 oC 1 0.001 150 0.01 0.1 1 10 tAV, TIME IN AVALANCHE (ms) 4 www.fairchildsemi.com FDD770N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDD770N15A — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve θJC o ZθJC (t), Thermal Response Thermal Response [Z [ C/W] ] 2.5 1 0.5 0.2 PDM 0.1 t1 0.05 *Notes: 0.02 0.01 0.1 o 1. ZθJC(t) = 2.2 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.05 -5 10 ©2012 Fairchild Semiconductor Corporation FDD770N15A Rev. 1.2 t2 -4 10 -3 -2 10 10 Rectangular Pulse t1, Rectangular PulseDuration Duration [sec] [sec] 5 -1 10 1 www.fairchildsemi.com FDD770N15A — N-Channel PowerTrench® MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FDD770N15A Rev. 1.2 6 www.fairchildsemi.com FDD770N15A — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FDD770N15A Rev. 1.2 7 www.fairchildsemi.com Driver VGS ( Driver) VGS (DUT) VDD VRG RG t 10V t DUT Qsync = VGS 1 ⋅ VR ( t ) dt RG ∫ G Figure 18. Total Gate Charge Qsync. Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FDD770N15A Rev. 1.2 8 www.fairchildsemi.com FDD770N15A — N-Channel PowerTrench® MOSFET VCC ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com