FDD86250

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 51 A, 22 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. „ Shielded Gate MOSFET Technology „ Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A „ 100% UIL tested Application „ RoHS Compliant „ DC - DC Conversion D D G S G D -P-2A52 K TO (T O -252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted. Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID TC = 25 °C -Continuous TC = 100 °C -Continuous TA = 25 °C -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Ratings 150 Units V ±20 V (Note 5) 51 (Note 5) 27 (Note 1a) 8 (Note 4) 164 (Note 3) 180 132 (Note 1a) Operating and Storage Junction Temperature Range 3.1 -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient 0.94 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD86250 Device FDD86250 ©2010 Fairchild Semiconductor Corporation FDD86250 Rev. 2.0 Package D-PAK(TO-252) 1 Reel Size 13 ’’ Tape Width 16 mm Quantity 2500 units www.fairchildsemi.com FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET April 2015 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.0 V 150 V 106 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -10 VGS = 10 V, ID = 8 A 18.4 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 6.5 A 21.4 31 VGS = 10 V, ID = 8 A, TJ = 125 °C 35.8 45 gFS Forward Transconductance 2.0 VDS = 10 V, ID = 8 A 2.9 mV/°C 22 28 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 75 V, VGS = 0 V, f = 1 MHz 1585 2110 pF 167 225 pF 7 15 pF Ω 0.6 Switching Characteristics td(on) Turn-On Delay Time 11.2 20 tr Rise Time 10 ns td(off) Turn-Off Delay Time VDD = 75 V, ID = 8 A, VGS = 10 V, RGEN = 6 Ω 3.7 20 32 ns tf Fall Time 4 10 ns Qg Total Gate Charge VGS = 0 V to 10 V 23 33 nC VGS = 0 V to 5 V 12.8 18 Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 75 V, ID = 8 A ns nC 6.7 nC 4.7 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 8 A (Note 2) 0.78 1.3 VGS = 0 V, IS = 2.6 A (Note 2) 0.73 1.2 IF = 8 A, di/dt = 100 A/μs V 71 113 ns 104 166 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. b) 96 °C/W when mounted on a minimum pad a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper 2: 3: 4: 5: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. Starting TJ = 25 °C, L = 1.0 mH, IAS = 19 A, VDD = 135 V, VGS = 10 V. Pulsed Id please refer to Fig 11 SOA graph for more details. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. ©2010 Fairchild Semiconductor Corporation FDD86250 Rev.2.0 2 www.fairchildsemi.com FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted. 4 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 VGS = 6 V VGS = 5.5 V 30 VGS = 5 V 20 10 VGS = 4.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 4.5 V VGS = 5 V 3 2 VGS = 5.5 V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 5 0 10 20 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 40 TJ = 125 oC 20 TJ = 25 oC 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs. Gate to Source Voltage 40 IS, REVERSE DRAIN CURRENT (A) 40 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) ID = 8 A 0 4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs. Junction Temperature 30 VDS = 5 V TJ = 150 oC 20 TJ = 25 oC 10 TJ = -55 oC 0 40 80 ID = 8 A VGS = 10 V 2.2 30 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.4 VGS = 10 V VGS = 6 V 2 3 4 5 10 1 TJ = 150 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 6 VGS = 0 V 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current ©2010 Fairchild Semiconductor Corporation FDD86250 Rev.2.0 3 1.2 www.fairchildsemi.com FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. 4000 ID = 8 A VDD = 50 V Ciss 1000 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V 6 VDD = 100 V 4 Coss 100 10 2 0 0 5 10 15 20 1 0.1 25 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs. Drain to Source Voltage 60 TJ = 10 ID, DRAIN CURRENT (A) 100 IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 25 oC TJ = 100 oC TJ = 125 oC 50 40 VGS = 10 V 30 VGS = 6 V 20 10 o RθJC = 0.94 C/W 1 0.001 0.01 0.1 1 10 0 25 40 125 150 P(PK), PEAK TRANSIENT POWER (W) 10000 10 μs 10 0.01 0.1 100 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 200 100 0.1 75 o Figure 9. Unclamped Inductive Switching Capability 1 50 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 100 μs THIS AREA IS LIMITED BY rDS(on) 1 ms SINGLE PULSE TJ = MAX RATED 10 ms DC RθJC = 0.94 oC/W TC = 25 oC 1 10 100 500 TC = 25 oC 1000 100 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward BiasSafe Operating Area ©2010 Fairchild Semiconductor Corporation FDD86250 Rev. 2.0 SINGLE PULSE RθJC = 0.94 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZθJC(t) = r(t) x RθJC RθJC = 0.94 oC/W Peak TJ = PDM x ZθJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.005 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDD86250 Rev.2.0 5 www.fairchildsemi.com FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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