FDD8647L

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD8647L N-Channel PowerTrench® MOSFET 40 V, 42 A, 9 mΩ Features General Description „ Fast Switching This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. „ 100% UIL tested Applications „ Max rDS(on) = 9 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 13 mΩ at VGS = 4.5 V, ID = 11 A „ RoHS Compliant „ Inverter „ Power Supplies D D G G S D -PA K TO -2 52 (TO -252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 42 52 (Note 1a) -Pulsed 14 A 100 Single Pulse Avalanche Energy EAS Ratings 40 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 33 43 (Note 1a) Operating and Storage Junction Temperature Range 3.1 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 2.9 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD8647L Device FDD8647L ©2008 Fairchild Semiconductor Corporation FDD8647L Rev. 1.2 Package D-PAK (TO-252) 1 Reel Size 13 ’’ Tape Width 16 mm Quantity 2500 units www.fairchildsemi.com FDD8647L N-Channel PowerTrench® MOSFET March 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3.0 V 40 V 31 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 2.0 -6 mV/°C VGS = 10 V, ID = 13 A 7.1 9.0 VGS = 4.5 V, ID = 11 A 9.9 13.0 VGS = 10 V, ID = 13 A, TJ = 125 °C 10.7 13.6 VDS = 5 V, ID = 13 A 49 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 20 V, VGS = 0 V, f = 1 MHz 1230 1640 pF 340 455 pF 55 80 pF Ω 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg 8 16 3 10 ns ns 19 34 ns VDD = 20 V, ID = 13 A, VGS = 10 V, RGEN = 6 Ω 2 10 ns Total Gate Charge VGS = 0 V to 10 V 20 28 nC Qg Total Gate Charge 14 Gate to Source Charge VGS = 0 V to 4.5 V VDD = 20 V, ID = 13 A 10 Qgs 3.8 nC Qgd Gate to Drain “Miller” Charge 3.1 nC nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.6 A (Note 2) 0.75 1.2 VGS = 0 V, IS = 13 A (Note 2) 0.84 1.3 IF = 13 A, di/dt = 100 A/µs V 28 45 ns 15 27 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 96 °C/W when mounted on a minimum pad 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: Starting TJ = 25 °C, L = 0.3 mH, IAS = 15.0 A, VDD = 36 V, VGS = 10.0 V. ©2008 Fairchild Semiconductor Corporation FDD8647L Rev. 1.2 2 www.fairchildsemi.com FDD8647L N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 100 3.5 VGS = 4.5 V 80 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 5 V VGS = 10 V 60 VGS = 4 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 40 20 VGS = 3.5 V 0 0.0 0.5 1.0 1.5 2.0 VGS = 4 V 2.5 VGS = 4.5 V 2.0 1.5 VGS = 5 V 1.0 VGS = 10 V 0.5 2.5 0 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 80 100 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 40 ID = 13 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics ID = 13 A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 30 20 TJ = 125 oC 10 TJ = 25 oC 0 -50 -25 0 25 50 75 2 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 80 ID, DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 3.5 V 3.0 VDS = 5 V 60 40 TJ = 150 oC 20 TJ = 25 oC TJ = -55 oC 2 3 4 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 0 1 VGS = 0 V 5 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2008 Fairchild Semiconductor Corporation FDD8647L Rev. 1.2 3 1.2 www.fairchildsemi.com FDD8647L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 3000 ID = 13 A 1000 8 VDD = 20 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 15 V VDD = 25 V 4 Ciss Coss 100 2 Crss f = 1 MHz VGS = 0 V 10 0.1 0 0 5 10 15 20 Figure 7. Gate Charge Characteristics 40 60 ID, DRAIN CURRENT (A) 42 10 TJ = 25 oC TJ = 125 oC 50 40 VGS = 10 V 30 Limited by Package 20 VGS = 4.5 V 10 o RθJC = 2.9 C/W 1 0.001 0.01 0.1 1 10 0 25 100 50 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 5 10 10 P(PK), PEAK TRANSIENT POWER (W) 200 100 100 us THIS AREA IS LIMITED BY rDS(on) 1 ms SINGLE PULSE TJ = MAX RATED 10 ms o RθJC = 2.9 C/W 100 ms DC TC = 25 oC 0.1 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 100 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 10 100 200 4 10 SINGLE PULSE RθJC = 2.9 oC/W 3 10 TC = 25 oC 2 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDD8647L Rev. 1.2 VGS = 10 V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD8647L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJc + TC SINGLE PULSE o RθJC = 2.9 C/W 0.001 -6 10 -5 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 96 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDD8647L Rev. 1.2 5 www.fairchildsemi.com FDD8647L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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