FDD8780

FDD8780/FDU8780 N-Channel PowerTrench® MOSFET 25V, 35A, 8.5mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 12.0mΩ at VGS = 4.5V, ID = 35A „ Low gate charge: Qg(10) = 21nC(Typ), VGS = 10V „ Low gate resistance LE „ Avalanche rated and 100% tested AD F RE E I MENTA TIO LE N MP Application „ RoHS Compliant „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D G D I-PAK G D S (TO-251AA) G S Short Lead I-PAK S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter Ratings 25 Units V VGS Gate to Source Voltage ±20 V Drain Current -Continuous (Package Limited) 35 ID -Continuous (Die Limited) 60 -Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature (Note 1) (Note 2) A 224 73 mJ 50 W -55 to 175 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case TO-252,TO-251 3.0 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W Package Marking and Ordering Information Device Marking FDD8780 Device FDD8780 Package TO-252AA Reel Size 13’’ Tape Width 16mm Quantity 2500 units FDU8780 FDU8780 TO-251AA N/A(Tube) N/A 75 units FDU8780 FDU8780_F071 TO-251AA N/A(Tube) N/A 75 units ©2006 Fairchild Semiconductor Corporation FDD8780/FDU8780 Rev. 1.1 1 www.fairchildsemi.com FDD8780/FDU8780 N-Channel PowerTrench® MOSFET March 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V 25 V mV/°C 12 1 TJ = 150°C 250 µA ±100 nA 2.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -6.3 VGS = 10V, ID = 35A 6.5 8.5 VGS = 4.5V, ID = 35A 9.1 12.0 VGS = 10V, ID = 35A TJ = 175°C 10.4 15.0 1080 1440 pF 265 355 pF 180 270 pF rDS(on) Drain to Source On Resistance 1.2 1.8 mV/°C mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13V, VGS = 0V, f = 1MHz f = 1MHz Ω 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to 10V Qg Total Gate Charge VGS = 0V to 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller”Charge VDD = 13V, ID = 35A VGS = 10V, RGS = 17Ω VDD = 13V ID = 35A Ig = 1.0mA 7 14 ns 9 18 ns 43 69 ns 24 38 ns 21 29 nC 11.2 16 nC 3.5 nC 4.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 35A 0.92 1.25 VGS = 0V, IS = 15A 0.84 1.0 IF = 35A, di/dt = 100A/µs 28 42 ns IF = 35A, di/dt = 100A/µs 20 30 nC V Notes: 1: Pulse time < 300µs, Duty cycle = 2%. 2: Starting TJ = 25oC, L = 0.3mH, IAS = 22A ,VDD = 23V, VGS = 10V. FDD8780/FDU8780 Rev. 1.1 2 www.fairchildsemi.com FDD8780/FDU8780 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted VGS = 10V ID, DRAIN CURRENT (A) 60 50 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 70 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 4.5V 40 VGS = 3.5V 30 20 VGS = 3V 10 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 1.8 5 VGS = 3.5V 4 3 VGS = 4.5V 2 1 0 VGS = 10V 0 10 20 30 40 50 ID, DRAIN CURRENT(A) 60 70 40 ID = 35A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 50 40 TJ = 175oC 30 TJ = 25oC 20 10 TJ = -55oC 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE TO SOURCE VOLTAGE (V) 4.5 Figure 5. Transfer Characteristics FDD8780/FDU8780 Rev. 1.1 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 30 20 TJ = 175oC 10 TJ = 25oC 4.5 6.0 7.5 9.0 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 70 60 ID = 35A 0 3.0 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 3V 6 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics 7 200 100 VGS = 0V 10 TJ = 175oC 1 TJ = 25oC 0.1 0.01 1E-3 0.0 TJ = -55oC 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD8780/FDU8780 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 4000 VDD = 10V 8 CAPACITANCE (pF) 6 VDD = 13V 4 VDD = 16V 2 0 0 5 10 15 Ciss 20 1000 f = 1MHz VGS = 0V 100 0.1 25 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics 70 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) TJ = 25oC 10 TJ = 125oC TJ = 150oC 60 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 40 30 VGS = 4.5V 20 0 25 100 300 VGS = 10V 50 10 1 0.01 o RθJC = 3.0 C/W 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE(oC) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 7000 P(PK), PEAK TRANSIENT POWER (W) 500 10us 100 ID, DRAIN CURRENT (A) 30 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 50 100us 10 LIMITED BY PACKAGE 1 0.1 Coss Crss 1ms 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED DC TC = 25oC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 – T C ----------------------150 I = I25 100 SINGLE PULSE 30 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area FDD8780/FDU8780 Rev. 1.1 TC = 25oC VGS = 10V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD8780/FDU8780 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 13. Transient Thermal Response Curve FDD8780/FDU8780 Rev. 1.1 5 www.fairchildsemi.com FDD8780/FDU8780 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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