DATA SHEET
www.onsemi.com
SyncFETt – N-Channel,
POWERTRENCH)
VDS MAX
30 V
rDS(on) MAX
ID MAX
4.4 mW @ 10 V
21 A
5.2 mW @ 4.5 V
30 V, 21 A, 4.4 mW
FDMC0310AS,
FDMC0310AS-F127
Pin 1
G
SS
S
D
DD
General Description
The FDMC0310AS has been designed to minimize losses in power
conversion application. Advancements in both silicon and package
technologies have been combined to offer the lowest rDS(on) while
maintaining excellent switching performance. This device has the
added benefit of an efficient monolithic schottky body diode.
Top
Bottom
WDFN8 3.3x3.3, 0.65P
(MLP SAWN)
CASE 511DH
Pin 1
SS
Features
• Max rDS(on) = 4.4 mW at VGS = 10 V, ID = 19 A
• Max rDS(on) = 5.2 mW at VGS = 4.5 V, ID = 17.5 A
• Advanced Package and Silicon Combination for Low rDS(on) and
•
•
•
•
D
D
Top
High Efficiency
SyncFET Schottky Body Diode
MSL1 Robust Package Design
100% UIL Tested
These Devices are Pb−Free and are RoHS Compliant
D
SG
DD
Bottom
WDFN8 3.3x3.3, 0.65P
(MLP PUNCH)
CASE 511DQ − Option C
MARKING DIAGRAM
Applications
•
•
•
•
FDMC
0310AS
ALYW
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU Low Side Switch
Networking Point of Load Low Side Switch
Telecom Secondary Side Rectification
$Y&Z&2&K
FDMC
0310AS
FDMC0310AS = Device Code
A
= Assembly Site
L
= Wafer Lot Number
YW
= Assembly Start Week
$Y
= onsemi Logo
&Z
= Assembly Plant Code
&2
= Numeric Date Code
&K
= Lot Code
PIN CONNECTIONS
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2013
February, 2022 − Rev. 4
1
Publication Order Number:
FDMC0310AS/D
FDMC0310AS, FDMC0310AS−F127
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Ratings
Unit
VDS
Drain to Source Voltage
30
V
VDSt
Drain to Source Transient Voltage (tTransient < 100 ns)
33
V
VGS
Gate to Source Voltage (Note 1)
±20
V
Continuous, TC = 25°C
21
A
Continuous, TA = 25°C (Note 3a)
19
A
Pulsed
100
A
66
mJ
TC = 25°C
36
W
TA = 25°C (Note 3a)
2.4
ID
Parameter
Drain Current
EAS
Single Pulse Avalanche Energy (Note 2)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
2. EAS of 66 mJ is based on starting TJ = 25°C, L = 0.3 mH, IAS = 21 A, VDD = 27 V, VGS = 10 V. 100% tested at L= 3 mH, IAS = 10.2 A.
THERMAL CHARACTERISTICS
Symbol
Ratings
Unit
RqJC
Thermal Resistance, Junction to Case
Parameter
3.4
°C/W
RqJA
Thermal Resistance, Junction to Ambient (Note 3a)
53
3. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed
by design while RqCA is determined by the user’s board design.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
a. 53°C/W when mounted on a
1 in2 pad of 2 oz copper.
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2
FDMC0310AS, FDMC0310AS−F127
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
30
−
−
V
DBV DSS
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, referenced to 25°C
−
26
−
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
−
−
500
mA
IGSS
Gate to Source Leakage Current, Forward
VGS = 20 V, VDS = 0 V
−
−
100
nA
1.2
1.6
3.0
V
DT J
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1 mA
DV GS(th)
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 10 mA, referenced to 25°C
−
−5
−
mV/°C
Static Drain to Source On Resistance
VGS = 10 V, ID = 19 A
−
3.8
4.4
mW
VGS = 4.5 V, ID = 17.5 A
−
4.5
5.2
VGS = 10 V, ID = 19 A, TJ = 125°C
−
4.5
5.8
VDS = 5 V, ID = 19 A
−
106
−
S
VDS = 15 V, VGS = 0 V, f = 1 MHz
−
2380
3165
pF
DT J
rDS(on)
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
−
885
1175
pF
Crss
Reverse Transfer Capacitance
−
100
150
pF
0.1
0.7
2.5
W
−
11
20
ns
−
5
10
ns
Turn−Off Delay Time
−
30
48
ns
Fall Time
−
4
10
ns
VGS = 0 V to 10 V
VDD = 15 V, ID = 19 A
−
37
52
nC
VGS = 0 V to 4.5 V
VDD = 15 V, ID = 19 A
−
18
25
nC
VDD = 15 V, ID = 19 A
−
6
−
nC
−
6
−
nC
VGS = 0 V, IS = 2 A (Note 4)
−
0.6
0.8
V
VGS = 0 V, IS = 19 A (Note 4)
−
0.8
1.2
V
IF = 19 A, di/dt = 300 A/ms
−
29
47
ns
−
33
53
nC
Rg
Gate Resistance
SWITCHING CHARACTERISTICS
td(on)
tr
td(off)
tf
Qg
Turn−On Delay Time
Rise Time
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 19 A
VGS = 10 V, RGEN = 6 W
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
FDMC0310AS, FDMC0310AS−F127
TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
5
VGS = 10 V
VGS = 6 V
VGS = 4.5 V
VGS = 4 V
80
60
VGS = 3.5 V
VGS = 3 V
40
20
NORMALIZED DRAIN TO
SOURCE ON−RESISTANCE
ID, DRAIN CURRENT (A)
100
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
1.5
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
4
VGS = 3 V
3
VGS = 3.5 V
2
1
0
2.0
0
20
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO SOURCE
ON−RESISTANCE (mW)
NORMALIZED DRAIN TO
SOURCE ON−RESISTANCE
12
1.2
1.0
0.8
0.6
−75 −50 −25
0
25
50
75
9
ID = 19 A
6
TJ = 125°C
3
0
100 125 150
TJ = 25°C
2
IS, REVERSE DRAIN CURRENT (A)
ID, DRAI N CURRENT (A)
VDS = 5 V
TJ = 125°C
TJ = 25°C
40
TJ = −55°C
20
0
1.0
1.5
2.0
2.5
3.0
3.5
6
8
10
Figure 4. On−Resistance vs. Gate to Source
Voltage
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
60
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance vs.
Junction Temperature
80
100
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
TJ, JUNCTION TEMPERATURE (°C)
100
80
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
ID = 19 A
VGS = 10 V
1.4
60
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
1.6
VGS = 10 V
VGS = 4.5 V VGS = 6 V
VGS = 4 V
4.0
VGS, GATE TO SOURCE VOLTAGE (V)
100
VGS = 0 V
TJ = 125°C
10
TJ = 25°C
TJ = −55°C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
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4
1.2
FDMC0310AS, FDMC0310AS−F127
TYPICAL CHARACTERISTICS
10
5000
ID = 19 A
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
(TJ = 25°C unless otherwise noted) (continued)
VDD = 15 V
6
VDD = 10 V
VDD = 20 V
4
2
0
Ciss
1000
Coss
Crss
100
0
8
16
24
32
f = 1 MHz
VGS = 0 V
50
0.1
40
1
Qg, GATE CHARGE (nC)
Figure 8. Capacitance vs. Drain to Source
Voltage
80
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
30
TJ = 25°C
10
TJ = 100°C
TJ = 125°C
1
0.001
0.01
0.1
1
10
VGS = 10 V
60
VGS = 4.5 V
40
20
RqJC = 3.4°C/W
LIMITED BY PACKAGE
0
25
50
75
100
tAV, TIME IN AVALANCHE (ms)
P(PK), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
100 ms
1 ms
10 ms
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RqJA = 125°C/W
TA = 25°C
0.01
0.01
0.1
100 ms
1s
10 s
DC
1
125
150
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
200
100
10
100
TC, CASE TEMPERATURE (°C)
Figure 9. Unclamped Inductive Switching
Capability
0.1
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
1
10
10
100 200
1000
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
10
SINGLE PULSE
RqJA = 125°C/W
TA = 25°C
0.5
10−4
10−3
10−2
10−1
1
10
100
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating
Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
1000
FDMC0310AS, FDMC0310AS−F127
TYPICAL CHARACTERISTICS
ZqJA, NORMALIZED THERMAL IMPEDANCE
(TJ = 25°C unless otherwise noted) (continued)
2
1
0.1
0.01
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.001
0.0001
10−4
t2
NOTES:
DUTY FACTOR: D = t1 / t2
PEAK TJ = PDM x Z qJA x RqJA + TA
SINGLE PULSE
RqJA = 125°C/W
(Note 3b)
10−3
10−2
10−1
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
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6
100
1000
FDMC0310AS, FDMC0310AS−F127
TYPICAL CHARACTERISTICS (continued)
SyncFET Schottky Body Diode Characteristics
onsemi SyncFET process embeds a Schottky diode in
parallel with POWERTRENCH MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 14 shows
the reverse recovery characteristic of the FDMC0310AS.
IDSS, REVERSE LEAKAGE CURRENT (A)
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
25
CURRENT (A)
20
15
10
di/dt = 300 A/ms
5
0
−5
0
50
100
150
200
250
0.01
TJ = 125°C
0.001
TJ = 100°C
0.0001
0.00001
TJ = 25°C
0.000001
0
TIME (ns)
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 14. SyncFET Body Diode Reverse
Recovery Characteristics
Figure 15. SyncFET Body Diode Reverse
Leakage vs. Drain−Source Voltage
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Package Type
Reel Size
Tape Width
Shipping†
FDMC0310AS
FDMC0310AS
WDFN8 3.3x3.3, 0.65P
MLP (SAWN)
(Pb−Free)
13”
12 mm
3000 / Tape & Reel
FDMC0310AS−F127
FDMC0310AS
WDFN8 3.3x3.3, 0.65P
MLP (PUNCH)
(Pb−Free)
13”
12 mm
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SyncFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DH
ISSUE O
0.05 C
3.30
DATE 31 JUL 2016
B
A
8
2X
(3.40)
2.37
5
0.45(4X)
2.15
3.30
(1.70)
(0.40)
KEEP OUT
AREA
(0.65)
0.70(4X)
PIN#1 IDENT
0.10 C
0.05 C
TOP VIEW
0.65
2X
1
4
1.95
0.75±0.05
0.42(8X)
RECOMMENDED LAND PATTERN
0.15±0.05
0.08 C
0.025±0.025
NOTES:
C
SIDE VIEW
SEATING
PLANE
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO−229
B. DIMENSIONS ARE IN MILLIMETERS.
3.30±0.05
2.27±0.05
PIN #1 IDENT
1
(0.79)
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
(0.50)4X
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
4
0.50±0.05 (4X)
(0.35)
(1.15)
3.30±0.05
R0.15
2.00±0.05
0.30±0.05 (3X)
8
5
0.65
1.95
0.35±0.05 (8X)
0.10
C A B
0.05
C
BOTTOM VIEW
DOCUMENT NUMBER:
DESCRIPTION:
98AON13625G
WDFN8 3.3X3.3, 0.65P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13648G
WDFN8 3.3X3.3, 0.65P
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13648G
WDFN8 3.3X3.3, 0.65P
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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