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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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N-Channel Power Trench® MOSFET
30 V, 19.5 A, 5.3 mΩ
Features
General Description
Max rDS(on) = 5.3 mΩ at VGS = 10 V, ID = 17.5 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15.0 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
Application
DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
Bottom
Top
8
1
7
6
D D D D
5
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
G S S S Pin 1
2 3 4
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
Drain Current
ID
(Note 3)
-Continuous (Package limited)
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
19.5
63
(Note 1a)
17.5
(Note 4)
54
-Pulsed
A
70
Single Pulse Avalanche Energy
EAS
Ratings
30
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
31
(Note 1a)
Operating and Storage Junction Temperature Range
2.3
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
4.0
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC7678
Device
FDMC7678
©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev. C2
Package
MLP 3.3x3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC7678 N-Channel Power Trench® MOSFET
November 2013
FDMC7678
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
IGSS
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
30
V
21
mV/°C
1
μA
100
nA
3.0
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 17.5 A
4.2
5.3
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 15.0 A
5.1
6.8
VGS = 10 V, ID = 17.5 A
TJ = 125 °C
5.7
7.2
VDD = 5 V, ID = 17.5 A
90
rDS(on)
gFS
Forward Transconductance
1.2
1.5
-5
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V
f = 1MHz
1810
2410
620
820
pF
pF
75
110
pF
0.7
2.5
Ω
10
19
ns
4
10
ns
26
41
ns
3
10
ns
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
VDD = 15 V, ID = 17.5 A
VGS = 10 V, RGEN = 6 Ω
Total Gate Charge
VGS = 0 V to 10 V
28
39
Total Gate Charge
VGS = 0 V to 4.5 V VDD = 15 V
ID = 17.5 A
14
19
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
nC
4.4
nC
3.9
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 1.9 A
(Note 2)
0.7
1.2
VGS = 0 V, IS = 17.5 A
(Note 2)
0.8
1.2
IF = 17.5 A, di/dt = 100 A/μs
V
30
49
ns
13
23
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. As an N-ch device, the negative VGS rating is for low duty cycle pulse occurence only. No continuous rating is implied.
4. EAS of 54 mJ is based on starting TJ = 25 oC, L = 0.3 mH, IAS = 19 A, VDD = 27 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev. C2
2
www.fairchildsemi.com
FDMC7678 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
70
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
60
ID, DRAIN CURRENT (A)
4
VGS = 10 V
VGS = 6 V
VGS = 4.5 V
50
VGS = 3.5 V
40
VGS = 3 V
30
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
10
0
0.0
0.5
1.0
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
3
VGS = 3 V
2
1
0
10
20
30
40
50
60
70
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
12
ID = 17.5 A
VGS = 10 V
1.4
rDS(on), DRAIN TO
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
1.5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
0
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
10
8
TJ = 125 oC
6
4
2
100 125 150
ID = 17.5 A
TJ = 25 oC
2
TJ, JUNCTION TEMPERATURE (oC)
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
100
IS, REVERSE DRAIN CURRENT (A)
70
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
60
ID, DRAIN CURRENT (A)
VGS = 6 V VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2.0
VGS = 3.5 V
VGS = 4.5 V
50
VDS = 5 V
40
TJ = 150 oC
30
TJ = 25 oC
20
10
VGS = 0 V
TJ = 150 oC
10
TJ = 25 oC
1
TJ = -55 oC
0.1
TJ = -55 oC
0
1.0
1.5
2.0
2.5
3.0
0.01
0.0
3.5
0.4
0.6
0.8
1.0
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
Figure 5. Transfer Characteristics
©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev. C2
0.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
3
www.fairchildsemi.com
FDMC7678 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
3000
ID = 17.5 A
VDD = 10 V
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 15 V
6
VDD = 20 V
4
1000
Coss
100
2
0
f = 1 MHz
VGS = 0 V
0
5
10
15
20
25
Crss
30
0.1
30
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
70
30
10
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
o
RθJC = 4.0 C/W
60
TJ = 25 oC
TJ = 100 oC
TJ = 125 oC
50
VGS = 10 V
40
VGS = 4.5 V
30
20
10
Limited by Package
1
0.001
0.01
0.1
1
10
0
25
100
50
P(PK), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
100 μs
10
1 ms
THIS AREA IS
LIMITED BY rDS(on)
10 ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 125 oC/W
10 s
DC
100 ms
TA = 25 oC
0.01
0.01
0.1
1
10
100200
VDS, DRAIN to SOURCE VOLTAGE (V)
150
2000
1000
100
10
SINGLE PULSE
RθJA = 125 oC/W
o
TA = 25 C
1
0.5 -4
-3
-2
10
10
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev. C2
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100
0.1
100
o
Figure 9. Unclamped Inductive
Switching Capability
1
75
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMC7678 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 125 C/W
0.001
0.0005 -4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev. C2
5
www.fairchildsemi.com
FDMC7678 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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