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FDMC86570LET60
N 沟道屏蔽栅极 PowerTrench® MOSFET
60 V, 87 A, 4.3 mΩ
特性
概述
TJ 额定值扩展:175°C
此 N 沟道 MOSFET 采用飞兆带屏蔽栅极技术的先进
PowerTrench® 工艺生产。该工艺针对导通阻抗优化,可保持卓
越开关性能。
屏蔽栅极 MOSFET 技术
最大 rDS(on) = 4.3 mΩ (VGS = 10 V, ID = 18 A)
应用
最大 rDS(on) = 6.5 mΩ (VGS = 4.5 V, ID = 15 A)
DC-DC 转换
高性能沟道技术可实现极低的 rDS(on)
终端为无铅产品
符合 RoHS 标准
引脚 1
引脚 1
D
顶
D
Power 33
Power 33
D
S
S
S
S
D
S
D
S
D
G
D
G
D
底
MOSFET 最大额定值 TA = 25 °C 除非另有说明。
符号
参数
VDS
漏极-源极电压
VGS
栅极-源极电压
- 连续
漏极电流
ID
TC = 25 °C
- 连续
TC = 100 °C
- 连续
TA = 25 °C
- 脉冲
EAS
单脉冲雪崩能量
PD
TJ, TSTG
功耗
TC = 25 °C
功耗
TA = 25 °C
额定值
60
单位
V
±20
V
(注 5)
87
(注 5)
62
(注 1a)
18
(注 4)
436
(注 3)
253
65
2.8
(注 1a)
-55 至 +175
工作和存储结温范围
A
mJ
W
°C
热性能
RθJC
结至外壳热阻
(注 1)
2.3
RθJA
结至环境热阻
(注 1a)
53
°C/W
封装标识与定购信息
器件标识
FDMC86570LT
© 2015 飞兆半导体公司
FDMC86570LET60 修订版 C2
器件
FDMC86570LET60
封装
Power33
1
卷尺寸
13 ’’
带宽
12 mm
数量
3000 个
www.fairchildsemi.com
FDMC86570LET60 N 沟道屏蔽栅极 PowerTrench® MOSFET
2015 年 3 月
符号
参数
测试条件
最小值
典型值
最大值
单位
关断特性
BVDSS
漏极-源极击穿电压
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
击穿电压温度系数
ID = 250 μA,参考 25 °C
IDSS
零栅极电压漏极电流
VDS = 48 V, VGS = 0 V
1
μA
IGSS
栅极-源极漏电流
VGS = ±20 V, VDS = 0 V
±100
nA
VGS(th)
栅极-源极阈值电压
VGS = VDS, ID = 250 μA
3.0
V
ΔVGS(th)
ΔTJ
栅极-源极阈值电压
温度系数
ID = 250 μA,参考 25 °C
-7
VGS = 10 V, ID = 18 A
3.1
4.3
rDS(on)
漏极至源极静态导通电阻
VGS = 4.5 V, ID = 15 A
4.7
6.5
VGS = 10 V, ID = 18 A, TJ = 125 °C
5.0
6.9
VDD = 5 V, ID = 18 A
75
S
4790
pF
821
pF
60
V
30
mV/°C
导通特性
gFS
正向跨导
1.0
1.8
mV/°C
mΩ
动态特性
Ciss
输入电容
Coss
输出电容
Crss
反向传输电容
Rg
栅极阻抗
VDS = 30 V, VGS = 0 V,
f = 1 MHz
19
0.1
pF
0.9
2.7
Ω
ns
开关特性
19
34
6.2
12
ns
38
61
ns
td(on)
导通延迟时间
tr
上升时间
td(off)
关断延迟时间
tf
下降时间
3.9
10
ns
Qg(TOT)
总栅极电荷
VGS = 0 V 至 10 V
63
88
nC
VGS = 0 V 至 4.5 V VDD = 30 V,
ID = 18 A
29
41
nC
14
nC
6.3
nC
VDD = 30 V, ID = 18 A,
VGS = 10 V, RGEN = 6 Ω
Qg(TOT)
总栅极电荷
Qgs
栅极-源极电荷
Qgd
栅极-漏极 “ 米勒 ” 电荷
漏极-源极二极管特性
VSD
源极-漏极二极管正向电压
trr
反向恢复时间
Qrr
反向恢复电荷
VGS = 0 V,IS = 18 A
(注 2)
0.8
1.3
V
VGS = 0 V,IS = 1.9 A
(注 2)
0.7
1.2
V
IF = 18 A, di/dt = 100 A/μs
43
69
ns
26
42
nC
注意:
1. RθJA 取决于安装在一平方英寸衬垫, 2oz 铜焊盘以及 FR-4 材质尺寸 1.5 x 1.5in. 的衬垫上的器件。 RθCA 由用户的电路板设计确定。
b. 125 安装在 2 oz 最小铜焊盘上
时的 °C/W
a. 53 安装在 2 oz 最小 1 in2 铜
焊盘上时的 °C/W
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. 脉冲测试:脉冲宽度: