FDMS007N08LC

FDMS007N08LC N-Channel Shielded Gate POWERTRENCH) MOSFET 80 V, 84 A, 6.7 mW Description T h i s N −C h a n n e l M V M O S F E T i s p r o d u c e d u s i n g ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode. www.onsemi.com VDS rDS(on) MAX ID MAX 80 V 6.7 mW @ 10 V 84 A Features • • • • • • • • Shielded Gate MOSFET Technology Max rDS(on) = 6.7 mW at VGS = 10 V, ID = 21 A Max rDS(on) = 9.9 mW at VGS = 4.5 V, ID = 17 A 50% Lower Qrr than Other MOSFET Suppliers Lowers Switching Noise/EMI MSL1 Robust Package Design 100% UIL Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant N−Channel D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Typical Applications • • • • Primary DC−DC MOSFET Synchronous Rectifier in DC−DC and AC−DC Motor Drive Solar G S Top S S D D D Pin 1 Bottom PQFN8 5y6, 1.27P (Power 56) CASE 483AE MARKING DIAGRAM $Y&Z&3&K FDMS 007N08LC $Y &Z &3 &K FDMS007N08LC = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 April, 2018 − Rev. 1 1 Publication Order Number: FDMS007N08LC/D FDMS007N08LC MOSFET MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified) Parameter Symbol Ratings Unit VDS Drain to Source Voltage 80 V VGS Gate to Source Voltage ±20 V A ID Drain Current − Continuous TC = 25°C (Note 5) 84 − Continuous TC = 100°C (Note 5) 53 − Continuous TA = 25°C (Note 1a) 14 345 − Pulsed (Note 4) EAS Single Pulse Avalanche Energy (Note 3) PD Power Dissipation Power Dissipation TJ, TSTG 181.5 mJ TC = 25°C 92.6 W TA = 25°C (Note 1a) 2.5 °C −55 to +150 Operating and Storage Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case RqJA Thermal Resistance, Junction to Ambient (Note 1a) Ratings Unit 1.35 °C/W 50 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Shipping (Qty / Packing)† FDMS007N08LC FDMS007N08LC PQFN8 5×6 (Power 56) (Pb−Free/Halogen Free) 13″ 12 mm 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage ID = 250 mA, VGS = 0 V 80 − − V DBV DSS DT J Breakdown Voltage Temperature Coefficient ID = 250 mA, referenced to 25°C − 32 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V − − 1 mA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V − − ±100 mA 1.0 1.4 2.5 V ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 120 mA DV GS(th) DT J Gate to Source Threshold Voltage Temperature Coefficient ID = 120 mA, referenced to 25°C − −5.6 − mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 21 A − 4.9 6.7 mW VGS = 4.5 V, ID = 17 A − 6.7 9.9 VGS = 10 V, ID = 21 A, TJ = 125°C − 8.5 11.6 VDD = 5 V, ID = 21 A − 84 − gFS Forward Transconductance www.onsemi.com 2 S FDMS007N08LC ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss VDS = 40 V, VGS = 0 V, f = 1 MHz − 2227 3100 pF Output Capacitance − 520 760 pF Crss Reverse Transfer Capacitance − 27 40 pF RG Gate Resistance 0.1 0.4 0.8 W − 10 21 ns − 3 10 Turn−off Delay Time − 38 61 Fall Time − 8 16 SWITCHING CHARACTERISTICS td(on) tr td(off) tf Turn−on Delay Time Rise Time VDD = 40 V, ID = 21 A, VGS = 10 V, RGEN = 6 W Qg Total Gate Charge VGS = 0V to 10 V, VDD = 40 V, ID = 21 A − 33 46 nC Qg Total Gate Charge VGS = 0V to 4.5 V, VDD = 40 V, ID = 21 A − 16 22 nC Qgs Gate to Source Charge VDD = 40 V, ID = 21 A − 5 − nC Qgd Gate to Drain ”Miller” Charge VDD = 40 V, ID = 21 A − 4 − nC Qoss Output Charge VDD = 40 V, VGS = 0 V − 30 − nC Qsync Total Gate Charge Sync VDS = 0 V, ID = 21 A − 35 − nC VGS = 0 V, IS = 2.1 A (Note 2) − 0.7 1.2 V VGS = 0 V, IS = 21 A (Note 2) − 0.8 1.3 V IF = 10 A, di/dt = 300 A/ms − 18 32 ns − 24 28 nC − 13 23 ns − 58 92 nC DRAIN−SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 10 A, di/dt = 1000 A/ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqCA is determined by the user’s board design. a) 50°C/W when mounted on a 1 in2 pad of 2 oz copper. 2. 3. 4. 5. b) 125°C/W when mounted on a minimum pad of 2 oz copper. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. EAS of 181 mJ is based on starting TJ = 25_C; L = 3 mH, IAS = 11 A, VDD = 80 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 35 A. Pulsed ID please refer to Fig. 11 SOA graph for more details. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. www.onsemi.com 3 FDMS007N08LC ID, DRAIN CURRENT (A) 200 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON−RESISTANCE TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) VGS = 8 V VGS = 6 V VGS = 4.5 V 150 VGS = 3.5 V 100 VGS = 3 V 50 PULSE DURATION = 80 m s DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 4 VGS = 3.5 V 3 VGS = 4.5 V 2 1 0 5 VGS = 6 V 0 rDS(on), DRAIN TO SOURCE ON−RESISTANCE(mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE ID = 21 A VGS= 10 V 1.6 1.4 1.2 1.0 0.8 0 25 50 50 PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX 40 ID = 20 A 30 20 TJ = 125 oC 10 0 75 100 125 150 TJ = 25 oC 1 TJ, JUNCTION TEMPERATURE ( oC) ID, DRAIN CURRENT (A) PULSE DURATION = 80m s DUTY CYCLE = 0.5% MAX VDS = 5 V 150 100 50 0 TJ = 150 oC TJ = 25 oC TJ = 0 −55oC 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 2 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs. Gate to Source Voltage I , SREVERSE DRAIN CURRENT (A) Figure 3. Normalized On Resistance vs. Junction Temperature 200 200 Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 2.0 0.6 −75 −50 −25 VGS = 10 V VGS = 8 V 50 100 150 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.8 PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX VGS = 3 V 200 100 10 1 0.1 0.01 0.001 0.0 6 VGS = 0 V Figure 5. Transfer Characteristics TJ = 150 oC TJ = 25 oC TJ = −55oC 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 4 FDMS007N08LC 10 10000 ID = 21 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (continued) VDD = 30 V 6 VDD = 40 V 4 VDD = 50 V 1000 Coss 100 Crss 10 2 0 f = 1 MHz VGS = 0 V 0 10 20 30 Qg, GATE CHARGE (nC) 1 0.1 40 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage 90 o ID DRAIN CURRENT (A) , IAS, AVALANCHE CURRENT (A) 100 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 1 0.001 0.01 0.1 1 10 tAV, TIME IN AVALANCHE (ms) RqJC = 1.35 C/W 72 VGS = 10 V 54 VGS = 4.5 V 36 18 0 25 100 1 10 m s THIS AREA IS LIMITED BY rDS(on) RqJC = 1.35 oC/W 0.1 0.1 100 m s SINGLE PULSE TJ = MAX RATED TC = 25 oC 1 ms CURVE BENT TO MEASURED DATA 10 ms 100 ms/DC 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) 100 125 150 Figure 10. Maximum Continuous Drain Current vs. Case Temperature P(PK), PEAK TRANSIENT POWER (W) 10 75 o 500 100 50 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 80 500 100000 SINGLE PULSE RqJC = 1.35 oC/W TC = 25 oC 10000 1000 100 10 −5 10 Figure 11. Forward Bias Safe Operating Area −4 10 −3 −2 10 10 t, PULSE WIDTH (sec) −1 10 Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 1 FDMS007N08LC r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS (continued) 2 1 0.1 0.01 0.001 −5 10 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: SINGLE PULSE ZqJC(t) = r(t) x RqJC RqJC = 1.35 oC/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 −4 10 −3 −2 10 10 −1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Case Transient Thermal Response Curve POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PQFN8 5X6, 1.27P CASE 483AE ISSUE B DOCUMENT NUMBER: DESCRIPTION: 98AON13655G PQFN8 5X6, 1.27P DATE 06 JUL 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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