FDMS039N08B

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. N-Channel PowerTrench® MOSFET 80 V, 100 A, 3.9 mΩ Features Description • RDS(on) = 3.2 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using ON Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Low FOM RDS(on) *QG • Low Reverse Recovery Charge, Qrr = 80 nC • Soft Reverse Recovery Body Diode • Enables Highly Efficiency in Synchronous Rectification Applications • Fast Switching Speed • Synchronous Rectification for ATX / Server / Telecom PSU • 100% UIL Tested • Battery Protection Circuit • RoHS Compliant • Motor drives and Uninterruptible Power Supplies Bottom Top S D D D Pin 1 S S G D D 5 4 G D 6 3 S D 7 2 S D 8 1 S Power 56 MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current - Continuous (TC = 25oC) - Continuous (TA = 25oC) IDM Drain Current EAS Single Pulsed Avalanche Energy - Pulsed PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Unit V ±20 V 100 A (Note 1a) 19.4 (Note 2) 400 A (Note 3) 240 mJ 104 W (TC = 25oC) (TA = 25oC) FDMS039N08B 80 (Note 1a) 2.5 W -55 to +150 o C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case, Max. RθJA Thermal Resistance, Junction to Ambient, Max. ©2011 Semiconductor Components Industries, LLC. October-2017, Rev. 3 FDMS039N08B 1.2 (Note 1a) 50 Unit oC/W Publication Order Number: FDMS039N08B/D FDMS039N08B — N-Channel PowerTrench® MOSFET FDMS039N08B Device Marking FDMS039N08B Device FDMS039N08B Package Power 56 Reel Size 13 ” Tape Width 12 mm Quantity 3000 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 80 - - V - 0.04 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 μA, VGS = 0 V VDS = 64 V, VGS = 0 V - - 1 μA IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 nA o ID = 250 μA, Referenced to 25 C On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.5 - 4.5 V Static Drain to Source On Resistance VGS = 10 V, ID = 50 A - 3.2 3.9 mΩ gFS Forward Transconductance VDS = 10 V, ID = 50 A - 100 - S VDS = 40 V, VGS = 0 V f = 1 MHz - 5715 7600 pF - 881 1170 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Engry Releted Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance - 15 - VDS = 40 V, VGS = 0 V - 1646 - pF VDS = 40 V, ID = 50 A VGS = 0 V to 10 V - 77 100 nC - 34 - nC - 13 - nC - 16 - nC - 1.2 - Ω - 42 94 ns - 25 60 ns - 48 106 ns - 17 44 ns (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 40 V, ID = 50 A VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 100 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 400 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 50 A - - 1.3 V trr Reverse Recovery Time - 68 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 50 A, VDD = 40 V dIF/dt = 100 A/μs - 80 - nC Notes: 1.RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Repetitive rating: pulse-width limited by maximum junction temperature. 3. L = 0.3 mH, IAS = 40 A, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 b. 125 °C/W when mounted on a minimum pad of 2 oz copper. FDMS039N08B — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 400 100 10 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 1 0.1 ID, Drain Current[A] ID, Drain Current[A] 100 *Notes: 1. VDS = 10V 2. 250μs Pulse Test 1 VDS, Drain-Source Voltage[V] o 25 C 10 o -55 C 1 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage o 150 C 3 4 5 6 VGS, Gate-Source Voltage[V] 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 5.5 400 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 5.0 4.5 VGS = 10V 4.0 3.5 3.0 VGS = 20V 2.5 100 o o 150 C 25 C 10 *Notes: 1. VGS = 0V o 2.0 *Note: TC = 25 C 0 50 100 150 200 250 ID, Drain Current [A] 300 1 0.2 350 Figure 5. Capacitance Characteristics 10 VGS, Gate-Source Voltage [V] Capacitances [pF] Ciss 1000 Coss 10 1.4 Figure 6. Gate Charge Characteristics 10000 100 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 5 0.1 1 10 VDS, Drain-Source Voltage [V] Crss 80 www.onsemi.com 3 VDS = 16V VDS = 40V VDS = 64V 8 6 4 2 0 *Note: ID = 50A 0 20 40 60 Qg, Total Gate Charge [nC] 80 FDMS039N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.8 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.08 1.04 1.00 *Notes: 1. VGS = 0V 2. ID = 250μA 0.96 0.94 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.6 1.4 1.2 1.0 *Notes: 1. VGS = 10V 2. ID = 50A 0.8 0.6 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 1000 120 100 ID, Drain Current [A] ID, Drain Current [A] VGS=10V 100 1ms 10 10ms Operation in This Area is Limited by R DS(on) 1 DC *Notes: 0.1 100ms o 1 10 VDS, Drain-Source Voltage [V] 0 25 100 RθJC=1.2 C/W 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 12. Eoss vs. Drain to Source Voltage 3.0 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD) If R = 0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1] 2.5 EOSS, [μJ] IAS, AVALANCHE CURRENT (A) 40 20 2. TJ = 150 C 3. Single Pulse Figure 11. Unclamped Inductive Switching Capability 100 60 o 1. TC = 25 C o 0.01 0.1 80 o STARTING TJ = 25 C 10 2.0 1.5 1.0 o STARTING TJ = 150 C 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 0.5 1000 www.onsemi.com 4 0.0 0 10 20 30 40 50 60 70 VDS, Drain to Source Voltage [V] 80 FDMS039N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve 2 Thermal Response, ZθJA(t) Thermal Response [ZθJA] (Normalized) 1 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 0.01 *Notes: t2 o 1. ZθJA(t) = 125 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -3 10 -2 10 -1 10 1 10 Pulse Duration [sec] tRectangular 1, Rectangular Pulse Duration [sec] www.onsemi.com 5 100 1000 FDMS039N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDMS039N08B — N-Channel PowerTrench® MOSFET Figure 14. Gate Charge Test Circuit & Waveform IG = const. Figure 15. Resistive Switching Test Circuit & Waveforms VDS RG VGS 10V RL VDS 90% VDD VGS VGS DUT 10% td(on) tr t on td(off) tf t off Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms VGS www.onsemi.com 6 DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop www.onsemi.com 7 VDD FDMS039N08B — N-Channel PowerTrench® MOSFET Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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