FDMS2572

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS2572 N-Channel UltraFET Trench® MOSFET 150V, 27A, 47mΩ Features General Description „ Max rDS(on) = 47mΩ at VGS = 10V, ID = 4.5A UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. „ Max rDS(on) = 53mΩ at VGS = 6V, ID = 4.5A „ Low Miller Charge „ Optimized efficiency at high frequencies Application „ UIS Capability (Single pulse and Repetitive pulse) „ Distributed Power Architectures and VRMs „ RoHS Compliant „ Primary Switch for 24V and 48V Systems „ High Voltage Synchronous Rectifier S Pin 1 D S D D S G D D 5 4 G D 6 3 S D 7 2 S D 8 1 S Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V 27 27 (Note 1a) 4.5 (Note 3) 150 -Pulsed A 30 Single Pulse Avalanche Energy EAS Ratings 150 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 78 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.6 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS2572 Device FDMS2572 ©2012 Fairchild Semiconductor Corporation FDMS2572 Rev.C4 Package Power 56 1 Reel Size 13’’ Tape Width 12mm Quantity 3000 units www.fairchildsemi.com FDMS2572 N-Channel UltraFET Trench® MOSFET December 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 150 V ID = 250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 120V, VGS = 0V 1 μA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 4 V 180 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C rDS(on) Drain to Source On Resistance gFS Forward Transconductance 2 3 -9.8 mV/°C VGS = 10V, ID = 4.5A 36 VGS = 6V, ID = 4.5A 39 53 VGS = 10V, ID = 4.5A, TJ = 125°C 69 103 VDS = 10V, ID = 4.5A 14 47 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 75V, VGS = 0V, f = 1MHz f = 1MHz 0.1 1960 2610 pF 130 175 pF 30 45 pF 1.3 2.6 Ω 11 20 ns 8 16 ns 38 61 ns 31 50 ns 31 43 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 75V, ID = 1.0A VGS = 10V, RGEN = 6Ω VGS = 0V to 10V VDD = 75V ID = 4.5A 9 nC 7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 2.2A (Note 2) IF = 4.5A, di/dt = 100A/μs 0.7 1.0 V 67 101 ns 130 195 nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 125°C/W when mounted on a minimum pad of 2 oz copper a.50°C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3: EAS of 150 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 10 A, VDD = 150 V, VGS = 10 V. FDMS2572 Rev.C4 2 www.fairchildsemi.com FDMS2572 N-Channel UltraFET Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted VGS = 10V 35 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX VGS = 6V 30 VGS = 5.5V 25 20 VGS = 5V 15 10 5 0 VGS = 4.5V 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 2.0 ID = 4.5A VGS = 10V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On - Resistance vs Junction Temperature ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX 40 TJ = 125oC 30 20 TJ = 25oC VGS = 6V 1.2 VGS = 10V 1.0 0.8 0 TJ =-55oC 1 2 3 4 5 ID = 4.5A 32 40 PULSE DURATION =300μs DUTY CYCLE = 2.0%MAX 90 80 TJ = 150oC 70 60 50 TJ = 25oC 40 30 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 60 VGS = 0V 10 1 TJ = 125oC 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-4 0.0 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics FDMS2572 Rev.C4 8 16 24 ID, DRAIN CURRENT(A) 100 1E-3 10 0 VGS =5.5V VGS =5V 1.4 Figure 4. On-Resistance vs Gate to Source Voltage 60 50 1.6 110 2.4 2.2 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX VGS =4.5V Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mOHM) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On-Region Characteristics 1.8 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS2572 N-Channel UltraFET Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3000 ID = 4.5A VDD =50V 8 VDD = 75V 6 VDD = 100V 4 2 0 0 7 Ciss 1000 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 14 21 Qg, GATE CHARGE(nC) 28 Coss 100 10 0.1 35 Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 5 4 TJ = 25oC 3 2 TJ = 1 0.01 125oC P(PK), PEAK TRANSIENT POWER (W) 100us 1ms 1 10ms 100ms 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1E-3 0.1 1 1s 10s SINGLE PULSE TJ = MAX RATED TA = 25OC 10 3 VGS = 6V 2 o 1 RθJA = 50 C/W 50 75 100 125 TA, AMBIENT TEMPERATURE (oC) 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 60 10 VGS = 10V 4 0 25 50 0.1 1 10 tAV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 100 6 5 DC 100 600 2000 1000 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 150 – T A -----------------------125 I = I25 TA = 25oC 10 1 0.5 -3 10 SINGLE PULSE -2 10 -1 10 0 10 1 10 2 10 3 10 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area FDMS2572 Rev.C4 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 6 0.01 Crss f = 1MHz VGS = 0V 4 www.fairchildsemi.com FDMS2572 N-Channel UltraFET Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 1E-3 5E-4 -3 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMS2572 Rev.C4 5 www.fairchildsemi.com FDMS2572 N-Channel UltraFET Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMS2572 N-Channel UltraFET Trench® MOSFET www.fairchildsemi.com 6 FDMS2572 Rev.C4 *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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C4 7 www.fairchildsemi.com FDMS2572 N-Channel UItraFET Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PowerTrench® F-PFS™ The Power Franchise® ® AccuPower™ PowerXS™ FRFET® AX-CAP™* Global Power ResourceSM Programmable Active Droop™ BitSiC® Green Bridge™ QFET® TinyBoost™ Green FPS™ Build it Now™ QS™ TinyBuck™ Green FPS™ e-Series™ CorePLUS™ Quiet Series™ TinyCalc™ Gmax™ CorePOWER™ RapidConfigure™ TinyLogic® GTO™ CROSSVOLT™ ™ TINYOPTO™ IntelliMAX™ CTL™ TinyPower™ Saving our world, 1mW/W/kW at a time™ ISOPLANAR™ Current Transfer Logic™ TinyPWM™ Marking Small Speakers Sound Louder SignalWise™ DEUXPEED® TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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