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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDMS86581
MOSFET, N-Channel,
POWERTRENCH),
60 V, 30 A, 15 mW
Features
•
•
•
•
www.onsemi.com
Typical RDS(on) = 12.5 mW at VGS = 10 V, ID = 30 A
Typical QG(tot) = 13 nC at VGS = 10 V, ID = 25 A
UIS Capability
RoHS Compliant
ELECTRICAL CONNECTION
Applications
•
•
•
•
DC−DC Power Supplies
AC−DC Power Supplies
Motor Control
Load Switching
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
N-Channel MOSFET
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Ratings
Unit
VDSS
Drain−to−Source Voltage
60
V
VGS
Gate−to−Source Voltage
±20
V
30
A
ID
Drain Current − Continuous
(VGS = 10) TC = 25°C (Note 1)
Pulsed Drain Current, TC = 25°C
See Figure 4
EAS
Single Pulse Avalanche Energy
(Note 2)
13.5
mJ
PD
Power Dissipation
50
W
0.33
W/°C
−55 to +175
°C
Derate Above 25°C
TJ, TSTG Operating and Storage Temperature
RqJC
Thermal Resistance, Junction to Case
3
°C/W
RqJA
Maximum Thermal Resistance,
Junction to Ambient (Note 3)
50
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Current is limited by bondwire configuration.
2. Starting TJ = 25°C, L = 40 mH, IAS = 26 A, VDD = 60 V during inductor charging
and VDD = 0 V during time in avalanche.
3. RqJA is the sum of the junction−to−case and case−to−ambient thermal
resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RqJC is guaranteed by design, while RqJA
is determined by the board design. The maximum rating presented here is
based on mounting on a 1 in2 pad of 2 oz copper.
© Semiconductor Components Industries, LLC, 2013
July, 2018 − Rev. 0
1
DD
G
SS
S
Top
D
D
Pin 1
Bottom
Power 56
(PQFN8 5x6)
CASE 483AE
MARKING DIAGRAM
$Y&Z&3&K
FDMS
86581
$Y
&Z
&3
&K
FDMS86581
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
Publication Order Number:
FDMS86581/D
FDMS86581
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Shipping†
FDMS86581
FDMS86581
Power 56
3000 Units/
Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ.
Max.
Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
ID = 250 mA, VGS = 0 V
60
−
−
V
IDSS
Drain−to−Source Leakage Current
VDS = 60 V,
VGS = 0 V
TJ = 25°C
−
−
1
A
TJ = 175°C (Note 4)
−
−
1
mA
IGSS
Gate−to−Source Leakage Current
VGS = ± 20 V
−
−
±100
nA
2.0
2.7
4.0
V
TJ = 25°C
−
12.5
15.0
mW
TJ = 175°C (Note 4)
−
25.1
30.1
mW
−
881
−
pF
BVDSS
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 mA
RDS(on)
Drain to Source On Resistance
ID = 30 A,
VGS = 10 V
DYNAMIC CHARACTERISTICS
VDS = 30 V, VGS = 0 V, f = 1 MHz
Ciss
Input Capacitance
Coss
Output Capacitance
−
281
−
pF
Crss
Reverse Transfer Capacitance
−
15
−
pF
RG
Gate Resistance
f = 1 MHz
−
3.1
−
W
Total Gate Charge
VGS = 0 to 10 V, VDD = 30 V, ID = 25 A
−
13
19
nC
Threshold Gate Charge
VGS = 0 to 2 V, VDD = 30 V, ID = 25 A
−
2
−
nC
Qgs
Gate−to−Source Gate Charge
VDD = 30 V, ID = 25 A
−
4
−
nC
Qgd
Gate−to−Drain “Miller” Charge
−
3
−
nC
−
−
20
ns
−
9
−
ns
Rise Time
−
5
−
ns
Turn−Off Delay
−
15
−
ns
Fall Time
−
4
−
ns
Turn−Off Time
−
−
28
ns
ISD = 30 A, VGS = 0 V
−
−
1.25
V
ISD = 15 A, VGS = 0 V
−
−
1.2
V
IF = 30 A, dlSD/dt = 100 A/ms, VDD = 48 V
−
37
55
ns
−
22
33
nC
Qg(ToT)
Qg(th)
SWITCHING CHARACTERISTICS
ton
Turn−On Time
td(on)
Turn−On Delay
tr
td(off)
tf
toff
VDD = 30 V, ID = 30 A, VGS = 10 V,
RGEN = 6 W
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD
Source−to−Drain Diode Voltage
trr
Reverse−Recovery Time
Qrr
Reverse Recovery Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
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2
FDMS86581
TYPICAL CHARACTERISTICS
50
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
0.0
40
CURRENT LIMITED
BY PACKAGE
30
20
10
0
0
25
50
75
100
125
150
175
0
50
TC, CASE TEMPERATURE (5C)
Figure 1. Normalized Power Dissipation
vs. Case Temperature
2
NORMALIZED THERMAL IMPEDANCE, ZqJC
VGS = 10 V
CURRENT LIMITED
BY SILICON
75
100
125
150
TC, CASE TEMPERATURE (5C)
175
200
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
DUTY CYCLE − DESCENDING ORDER
1
0.1
0.01
10−5
D = 0.50
0.20
0.10
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM × ZqJC × RqJC + TC
SINGLE PULSE
10−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
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3
100
101
FDMS86581
TYPICAL CHARACTERISTICS (continued)
1000
IDM, PEAK CURRENT (A)
VGS = 10 V
TC = 25°C
FOR TEMPERATURES ABOVE
25°C DERATE PEAK CURRENT
AS FOLLOWS:
175 − TC
I = I25
150
100
10
10−5
10−4
10−3
10−2
10−1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 4. Peak Current Capability
1000
IAS, AVALANCHE CURRENT (A)
100
ID, DRAIN CURRENT (A)
100
10
100 ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
0.1
SINGLE PULSE
TJ = MAX RATED
TC = 25°C
0.01
0.1
1
10
1 ms
10 ms
100 ms
100
500
If R = 0
tAV = (L)(IAS)/(1.3 × RATED BVDSS − VDD)
If R ≠ 0
tAV = (L/R)In[(IAS × R)/(1.3 × RATED BVDSS − VDD) + 1]
STARTING TJ = 25°C
10
STARTING TJ = 150°C
1
0.001
0.01
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
NOTE:
Figure 5. Forward Bias Safe Operating Area
Refer to ON Semiconductor Application Notes
AN7514 and AN7515.
Figure 6. Unclamped Inductive
Switching Capability
100
PULSE DURATION = 250 ms
DUTY CYCLE = 0.5% MAX
VDD = 5 V
80
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
60
40
TJ = 175°C
20
TJ = 25°C
TJ = −55°C
0
3
4
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
VGS = 0 V
10
TJ = 175°C
TJ = 25°C
1
0.1
0.0
Figure 7. Transfer Characteristics
0.8
1.0
1.2
1.4
0.2
0.4
0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Forward Diode Characteristics
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4
1.6
FDMS86581
TYPICAL CHARACTERISTICS (continued)
80
100
VGS
15 V Top
10 V
8V
7V
6V
5.5 V
5 V Bottom
250 ms PULSE WIDTH
TJ = 25°C
60
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
40
20
0
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
80
60
20
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
2.5
PULSE DURATION = 250 ms
DUTY CYCLE = 0.5% MAX
120
ID = 30 A
100
80
60
TJ = 175°C
40
20
0
TJ = 25°C
5
6
7
8
9
VGS, GATE TO SOURCE VOLTAGE (V)
10
PULSE DURATION = 250 ms
DUTY CYCLE = 0.5% MAX
2.0
1.5
ID = 30 A
VGS = 10 V
1.0
0.5
−80
Figure 11. RDSON vs. Gate Voltage
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
VGS = VDS
ID = 250 mA
1.1
0.9
0.7
0.5
0.3
−80
−40
0
40
80
120
160
−40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (5C)
200
Figure 12. Normalized RDSON vs. Junction
Temperature
2.5
1.3
5
Figure 10. Saturation Characteristics
NORMALIZED DRAIN TO SOURCE
ON−RESISTANCE
rDS(on), DRAIN TO SOURCE ON−
RESISTANCE (mW)
140
VGS
15 V Top
10 V
8V
7V
6V
5.5 V
5 V Bottom
40
0
5
250 ms PULSE WIDTH
TJ = 175°C
200
ID = 5 mA
2.0
1.5
1.0
0.5
−80
TJ, JUNCTION TEMPERATURE (5C)
−40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (5C)
200
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
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5
FDMS86581
TYPICAL CHARACTERISTICS (continued)
VGS, GATE TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
10000
1000
Ciss
100
Coss
10
1
0.1
f = 1 MHz
VGS = 0 V
Crss
1
10
100
10
ID = 25 A
VDD = 30 V
8
VDD = 36 V
VDD = 24 V
6
4
2
0
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs. Drain
to Source Voltage
2
4
6
8
10
Qg, GATE CHARGE (nC)
12
14
Figure 16. Gate Charge vs. Gate to Source
Voltage
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE B
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
DATE 06 JUL 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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