FDN339AN

FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • 3 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.050 Ω @ VGS = 2.5 V. • Low gate charge (7nC typical). Applications • • DC/DC converter • Load switch High performance trench technology for extremely low RDS(ON). • High power and current handling capability. D D S TM SuperSOT -3 G G Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Power Dissipation for Single Operation - Continuous Ratings Units 20 V ±8 V (Note 1a) 3 A (Note 1a) 0.5 (Note 1b) 0.46 - Pulsed TJ, T stg S 20 Operating and Storage Junction Temperature Range -55 to +150 W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity 339 FDN339AN 7’’ 8mm 3000 units 1999 Fairchild Semiconductor Corporation FDN339AN Rev. C FDN339AN November 1999 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA,Referenced to 25°C IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse IGSSR On Characteristics 20 V 14 mV/°C VDS = 16 V, VGS = 0 V 1 µA VGS = 8 V, VDS = 0 V 100 nA VGS = -8 V, VDS = 0 V -100 nA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 µA,Referenced to 25°C -3 0.029 0.040 0.039 0.4 0.85 1.5 V mV/°C Ω ID(on) On-State Drain Current VGS = 4.5 V, ID = 3 A VGS = 4.5 V, ID = 3 A, TJ=125°C VGS = 2.5 V, ID = 2.4 A VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 3 A 11 VDS = 10 V, VGS = 0 V, f = 1.0 MHz 700 pF 175 pF 85 pF 0.035 0.061 0.050 10 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω VDS = 10 V, ID = 3 A, VGS = 4.5 V 8 16 ns 10 18 ns 18 29 ns 5 10 ns 7 10 nC 1.2 nC 1.9 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 0.65 0.42 A 1.2 V 2) Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 Pad of 2 oz. Cu. b) 270°C/W on a minimum mounting pad of 2 oz. Cu. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDN339AN Rev. C FDN339AN Electrical Characteristics FDN339AN Typical Characteristics 20 2 2.5V 3.0V 16 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 4.5V 12 2.0V 8 4 1.5V 1.8 VGS = 2.0V 1.6 1.4 2.5V 3.0V 1.2 3.5V 4.5V 0.8 0 0 0.5 1 1.5 2 2.5 0 3 4 8 12 16 20 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.1 1.6 ID = 3A VGS = 4.5V ID = 1.5A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.0V 1 1.4 1.2 1 0.8 0.08 0.06 TA = 125oC 0.04 TA = 25oC 0.02 0.6 -50 -25 0 25 50 75 100 125 0 150 1 TJ, JUNCTION TEMPERATURE (oC) 2 Figure 3. On-Resistance Variation with Temperature. 4 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 o VDS = 5V TA = -55 C 25oC IS, REVERSE DRAIN CURRENT (A) 20 ID, DRAIN CURRENT (A) 3 VGS, GATE TO SOURCE VOLTAGE (V) o 125 C 16 12 8 4 VGS = 0V 10 1 TA = 125oC o 25 C 0.1 o -55 C 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN339AN Rev. C (continued) 1000 5 VDS = 5V ID = 3A f = 1MHz VGS = 0 V 10V 4 800 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDN339AN Typical Characteristics 3 2 CISS 600 400 1 200 0 0 COSS CRSS 0 2 4 6 8 10 0 4 Qg, GATE CHARGE (nC) 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 100 20 SINGLE PULSE o 1ms RθJA=270 C/W 16 10 o TA=25 C POWER (W) 10ms 100ms 1 1s 10s DC VGS = 4.5V SINGLE PULSE o RθJA = 270 C/W 0.1 12 8 4 o TA = 25 C 0 0.01 0.1 1 10 0.0001 100 0.001 VDS, DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. TRANSIENT THERMAL RESISTANCE 1 r(t), NORMALIZED EFFECTIVE ID, DRAIN CURRENT (A) RDS(ON) LIMIT 0.5 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.2 R θJA (t) = r(t) * RθJA R θJA = 270 °C/W 0.1 0.05 0.02 0.01 P(pk) t1 Single Pulse t2 0.005 TJ - TA = P * RθJA (t) 0.002 Duty Cycle, D = t1 /t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDN339AN Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench  QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. E