FDN340P

February 2007 FDN340P Single P-Channel , Logic Level , PowerTrench MOSFET GeneralDescription Features Thi s P-Channel Logi c Level MOSFET i s produced usi ng Fai rchi ld Semi conductor advanced Power Trench process that has been especi ally tai lored to mi ni mi ze the on-state resi stance and yet mai ntai n low gate charge for superi or swi tchi ng performance. • –2A,20 V RDS(ON)= 70 mΩ @ V GS = –4.5 V RDS(ON)= 110 mΩ @ V GS = –2.5 V • Low gate charge (7.2 nC typi cal). • Hi ghperformance trench technology for extremely low RDS(ON). These devi ces are well sui ted for portable electroni cs appli cati ons:load swi tchi ng and power management, batterychargi ng ci rcui ts,and DC/DC conversi on. • Hi gh power versi on ofi ndustryStandard SOT-23 package. Identi cal pi n-out to SOT-23 wi th 30% hi gher power handli ng capabi li ty.
D        G Absolute Maxim um Ratings Sym bol S TA=25oC unlessotherwi se noted Ratings Units V DSS Drai n-Source Voltage Param eter –20 V V GSS Gate-Source Voltage ±8 V ID Drai n Current –2 A PD Power Di ssi pati on for Si ngle Operati on – Conti nuous (Note 1a) – Pulsed TJ ,TSTG –10 (Note 1a) 0.5 (Note 1b) 0.46 W –55 to +150 °C (Note 1a) 250 °C/ W (Note 1) 75 °C/ W Operati ng and Storage Juncti on Temperature Range Therm alCharacteristics RθJA Thermal Resi stance,Juncti on-to-Ambi ent RθJ C Thermal Resi stance,Juncti on-to-Case Package Marking and Ordering Inform ation Device M arking Device ReelSize Tape width Quantity 340 FDN340P 7’ ’ 8mm 3000 uni ts 2007 Fai rchi ld Semi conductor Corporati on FDN340P Rev E1 FDN340P September 200 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics V GS = 0 V, ID = –250 µA BV DSS ∆BV DSS ∆TJ Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF Gate–Body Leakage, Forward V GS = 8 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –8 V, V DS = 0 V –100 nA –1.5 V On Characteristics –20 ID = –250 µA,Referenced to 25°C V –12 mV/°C V DS = –16 V, V GS = 0 V –1 V DS = –16 V, V GS = 0 V,TJ =55°C –10 µA (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance V DS = V GS , ID = –250 µA ID = –250 µA,Referenced to 25°C ID(on) On–State Drain Current V GS = –4.5 V, V DS = –5 V gFS Forward Transconductance V DS = –4.5 V, ID = –2 A 9 S V DS = –10 V, f = 1.0 MHz V GS = 0 V, 779 pF 121 pF 56 pF V GS(th) ∆V GS(th) ∆TJ RDS(on) V GS = –4.5 V, –0.4 –0.8 3 ID = –2 A V GS = –4.5 V, ID = –2 A,TJ =125°C V GS = –2.5 V, ID = –1.7A, mV/°C 60 70 77 120 82 110 –5 mΩ A Dynamic Characteristics 600 Input Capacitance 175 Output Capacitance 80 Reverse Transfer Capacitance Switching Characteristics (Note 2) V DD = –10 V, V GS = –4.5 V, ID = –1 A, RGEN = 6 Ω td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 27 43 ns tf Turn–Off Fall Time 11 20 ns Qg Total Gate Charge 7.2 10 Qgs Gate–Source Charge Qgd Gate–Drain Charge V DS = –10V, V GS = –4.5 V ID = –3.5 A, 10 20 ns 9 10 ns nC 1.7 nC 1.5 nC Drain–Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = –0.42 A Voltage (Note 2) –0.7 –0.42 A –1.2 V Notes: unction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of 1. RθJA is the sum of the j the drain pins. RθJC is guaranteed by design while RθCA is determined by the user' s board design. a. 250°C/W when mounted on a 0.02in2 pad of 2 oz copper b. 270°C/W when mounted on a .001 in2 pad of 2 oz copper Scale 1 : 1 on letter size paper 2.Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDN340P Rev E1 FDN340P Electrical Characteristics FDN340P Typical Characteristics 15 V GS = -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -2.5V V 12 -ID, DRAIN CURRENT (A) 2 -3.0V -3.5V 9 -2.0V 6 3 -1.5V 0 V GS=-2.0V 1.8 1.6 -2.5V 1.4 -3.0V 1.2 -3.5V -4.5V 1 0.8 0 1 2 3 4 0 3 6 -VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 15 0.22 ID = -1A ID = -2A V GS = -4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 12 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 1.2 1.1 1 0.9 0.8 0.7 0.18 0.14 TA = 125o C 0.1 TA = 25 oC 0.06 0.02 -50 -25 0 25 50 75 100 125 150 1 2 T J, JUNCTION TEMPERATURE ( oC) 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 10 T A = -55oC 25o C -IS , REVERSE DRAIN CURRENT (A) V DS = -5V 8 -ID, DRAIN CURRENT (A) 9 -ID , DRAIN CURRENT (A) 125oC 6 4 2 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 V GS = 0V 1 T A = 125o C 0.1 25oC 0.01 -55 o C 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD , BODY DIODE FORW ARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN340P Rev E1 FDN340P Typical Characteristics 1000 ID = -3.5A V DS = -5V -10V 4 800 -15V 3 2 600 400 COSS 1 200 0 CRSS 0 0 1 2 3 4 5 6 7 8 9 0 5 Q g, GATE CHARGE (nC) 15 20 Figure 8. Capacitance Characteristics. 50 100 100ms 1 1s DC V GS = -10V SINGLE PULSE RθJA = 270 oC/W 0.1 SINGLE PULSE RθJA = 270° C/W TA = 25°C 40 100 µs 1ms 10ms R DS(ON) LIMIT POWER (W) 10 10 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. -ID , DRAIN CURRENT (A) f = 1 MHz V GS = 0 V CISS CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 5 30 20 10 T A = 25o C 0.01 0.1 1 10 100 0 0.001 0.01 0.1 1 10 SINGLE PULSE TIME (SEC) -V D S, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. 100 Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.2 R θ JA (t) = r(t) * Rθ JA R θJA = 270 °C/W 0.1 0.05 0.02 0.01 P(pk) t1 Single Pulse t2 0.005 TJ - T A = P *R θ JA (t) 0.002 Duty Cycle, D = t1 /t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDN340P Rev E1 300 TRADEMARKS The following are registered and unregistered tradem ark s F airc hild S em ic onduc tor owns or is authoriz ed to use and is not intended to b e an ex haustiv e list of all suc h tradem ark s. A C Ex ™ A c tiv eA rray ™ B ottom less™ B uild it N ow™ C oolF ET™ CROSSVOLT™ D O M E™ Ec oS P A R K ™ E2 C M O S ™ EnS igna™ F A C T® F A S T® F A S Tr™ FPS™ F R F ET™ F A C T Q uiet S eries™ G lob alO p toisolator™ G TO ™ H iS eC ™ I2 C ™ i-Lo ™ Im p liedD isc onnec t™ IntelliM A X ™ IS O P L A N A R ™ L ittleF ET™ M IC R O C O U P L ER ™ M ic roF ET™ M ic roP ak ™ M IC R O W IR E™ M SX™ M S X P ro™ A c ross the b oard. A round the world.™ The P ower F ranc hise® P rogram m ab le A c tiv e D roop ™ O CX™ O C X P ro™ O P TO L O G IC ® O P TO P L A N A R ™ PACM AN™ PO P™ P ower24 7 ™ P owerEdge™ P owerS av er™ P owerTrenc h® Q F ET® Q S™ Q T O p toelec tronic s™ Q uiet S eries™ R ap idC onfigure™ R ap idC onnec t™ µ S erD es™ S c alarP um p ™ S IL EN T S W ITC H ER S M A R T S TA R T™ SPM ™ S tealth™ S up erF ET™ S up erS O T™-3 S up erS O T™-6 S up erS O T™-8 S y nc F ET™ TC M ™ Tiny B oost™ Tiny B uc k ™ Tiny P W M ™ Tiny P ower™ Tiny L ogic ® TIN Y O P TO ™ TruTranslation™ UHC® ® U niF ET™ VCX™ W ire™ DISC L AIMER F A IR C H IL D S EM IC O N D U C TO R R ES ER V ES TH E R IG H T TO M A K E C H A N G ES W ITH O U T F U R TH ER N O TIC E TO A N Y P R O D U C TS H ER EIN TO IM P R O V E R EL IA B IL ITY , F U N C TIO N O R D ES IG N . F A IR C H IL D D O ES N O T A S S U M E A N Y L IA B IL ITY A R IS IN G O U T O F TH E A P P L IC A TIO N O R U S E O F A N Y P R O D U C T O R C IR C U IT D ES C R IB ED H ER EIN ; N EITH ER D O ES IT C O N V EY A N Y L IC EN S E U N D ER ITS P A TEN T R IG H TS , N O R TH E R IG H TS O F O TH ER S . TH ES E S P EC IF IC A TIO N S D O N O T EX P A N D TH E TER M S O F F A IR C H IL D ’S W O R L D W ID E TER M S A N D C O N D ITIO N S , S P EC IF IC A L L Y TH E W A R R A N TY TH ER EIN , W H IC H C O V ER S TH ES E P R O D U C TS . L IF E SU P P O RT P O L IC Y F A IR C H IL D ’S P R O D U C TS A R E N O T A U TH O R IZ ED F O R U S E A S C R ITIC A L C O M P O N EN TS IN L IF E S U P P O R T D EV IC ES O R S Y S TEM S W ITH O U T TH E EX P R ES S W R ITTEN A P P R O V A L O F F A IR C H IL D S EM IC O N D U C TO R C O R P O R A TIO N . A s used herein: 1 . L ife sup p ort dev ic es or sy stem s are dev ic es or sy stem s whic h, (a) are intended for surgic al im p lant into the b ody , or (b ) sup p ort or sustain life, or (c ) whose failure to p erform when p rop erly used in ac c ordanc e with instruc tions for use p rov ided in the lab eling, c an b e reasonab ly ex p ec ted to result in signific ant injury to the user. 2. A c ritic al c om p onent is any c om p onent of a life sup p ort dev ic e or sy stem whose failure to p erform c an b e reasonab ly ex p ec ted to c ause the failure of the life sup p ort dev ic e or sy stem , or to affec t its safety or effec tiv eness. P RO DU C T STATU S DEF IN ITIO N S De fin itio n o f Te rm s Da ta s h e e t Id e n tific a tio n P ro d u c t Sta tu s De fin itio n A dv anc e Inform ation F orm ativ e or In D esign This datasheet c ontains the design sp ec ific ations for p roduc t dev elop m ent. S p ec ific ations m ay c hange in any m anner without notic e. P relim inary F irst P roduc tion This datasheet c ontains p relim inary data, and sup p lem entary data will b e p ub lished at a later date. F airc hild S em ic onduc tor reserv es the right to m ak e c hanges at any tim e without notic e in order to im p rov e design. N o Identific ation N eeded F ull P roduc tion This datasheet c ontains final sp ec ific ations. F airc hild S em ic onduc tor reserv es the right to m ak e c hanges at any tim e without notic e in order to im p rov e design. O b solete N ot In P roduc tion This datasheet c ontains sp ec ific ations on a p roduc t that has b een disc ontinued b y F airc hild sem ic onduc tor. The datasheet is p rinted for referenc e inform ation only . R ev . I22