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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FDN360P
Single P-Channel, PowerTrench MOSFET
General Description
Features
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
• –2 A, –30 V.
RDS(ON) = 80 mΩ @ VGS = –10 V
RDS(ON) = 125 mΩ @ VGS = –4.5 V
• Low gate charge (6.2 nC typical)
• High performance trench technology for extremely
low RDS(ON) .
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
• High power version of industry Standard SOT-23
package. Identical pin-out to SOT-23 with 30%
higher power handling capability.
D
D
S
G
TM
SuperSOT -3
Absolute Maximum Ratings
Symbol
S
G
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
–2
A
PD
Power Dissipation for Single Operation
– Continuous
(Note 1a)
– Pulsed
TJ, TSTG
–10
(Note 1a)
0.5
(Note 1b)
0.46
Operating and Storage Junction Temperature Range
–55 to +150
W
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJA
(Note 1a)
Thermal Resistance, Junction-to-Case
RθJC
(Note 1)
250
°C/W
75
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
360
FDN360P
7’’
8mm
3000 units
2003 Fairchild Semiconductor Corporation
FDN360P Rev F1 (W)
FDN360P
May 2003
Parameter
Symbol
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
VGS = 0 V, ID = –250 µA
BVDSS
∆BVDSS
∆TJ
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V,
VDS = 0 V
–100
nA
–3
V
On Characteristics
–30
ID = –250 µA, Referenced to 25°C
VDS = –24V,
V
–22
VGS = 0 V
mV/°C
–1
µA
–10
VDS = –24V, VGS = 0 V, TJ=55°C
(Note 2)
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
–1
–1.9
ID(on)
On–State Drain Current
VGS = –10 V,
VDS = –5 V
gFS
Forward Transconductance
VDS = –5 V,
ID = –2 A
5
S
VDS = –15 V,
f = 1.0 MHz
V GS = 0 V,
298
pF
83
pF
39
pF
4
VGS = –10 V,
ID = –2 A
VGS = –10 V, ID = –2 A, TJ=125°C
VGS= –4.5 V,
ID = –1.5A
63
90
100
mV/°C
80
136
125
–10
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
tf
Qg
Total Gate Charge
(Note 2)
6
12
ns
13
23
ns
Turn–Off Delay Time
11
20
ns
Turn–Off Fall Time
6
12
ns
6.2
9
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = –15 V,
VGS = –10 V,
VDS = –15V,
VGS = –10 V
ID = –1 A,
RGEN = 6 Ω
ID = –3.6 A,
1
nC
1.2
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = –0.42 A
Voltage
(Note 2)
–0.8
–0.42
A
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDN360P Rev F1 (W)
FDN360P
Electrical Characteristics
FDN360P
Typical Characteristics
15
2
-6.0V
-5.0V
V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -10V
-4.5V
12
9
-4.0V
6
-3.5V
3
-3.0V
1.8
VGS = -3.5V
1.6
1.4
-4.0V
1.2
-4.5V
1
-5.0V
-6.0V
0.8
-7.0V
-10V
0.6
0
0
1
2
3
4
0.4
5
0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
3
6
9
12
15
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.3
ID = -2A
VGS = -10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
1.2
1
0.8
0.6
ID = -1A
0.25
0.2
TA = 125oC
0.15
0.1
TA = 25oC
0.05
-50
-25
0
25
50
75
100
125
150
2
4
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
8
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
10
-IS, REVERSE DRAIN CURRENT (A)
25oC
TA = -55oC
VDS = -5.0V
-ID, DRAIN CURRENT (A)
6
-VGS, GATE TO SOURCE VOLTAGE (V)
8
125oC
6
4
2
0
VGS = 0V
1
TA = 125oC
0.1
25oC
-55oC
0.01
0.001
0.0001
1
2
3
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN360P Rev F1 (W)
FDN360P
Typical Characteristics
400
VDS = -5V
ID = -3.6A
f = 1 MHz
VGS = 0 V
-10V
CISS
8
-15V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
6
4
2
300
200
COSS
100
CRSS
0
0
0
1
2
3
4
5
6
7
0
6
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
24
20
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
10µs
10
100µs
1ms
10ms
100ms
1s
1
VGS = -10V
SINGLE PULSE
RθJA =270oC/W
0.1
DC
TA = 25oC
0.1
1
30
10
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
15
10
5
0
0.001
0.01
100
0.01
0.1
1
-VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
18
Figure 8. Capacitance Characteristics.
100
-ID, DRAIN CURRENT (A)
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 270 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN360P Rev F1 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
FACT
ActiveArray
FACT Quiet Series
Bottomless
FASTâ
CoolFET
FASTr
CROSSVOLT FRFET
DOME
GlobalOptoisolator
EcoSPARK
GTO
E2CMOSTM
HiSeC
EnSignaTM
I2C
Across the board. Around the world.
The Power Franchise
Programmable Active Droop
ImpliedDisconnect PACMAN
POP
ISOPLANAR
Power247
LittleFET
PowerTrenchâ
MicroFET
QFET
MicroPak
QS
MICROWIRE
QT Optoelectronics
MSX
Quiet Series
MSXPro
RapidConfigure
OCX
RapidConnect
OCXPro
SILENT SWITCHERâ
OPTOLOGICâ
SMART START
OPTOPLANAR
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogicâ
TruTranslation
UHC
UltraFETâ
VCX
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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