FDP65N06

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP65N06 N-Channel UniFETTM MOSFET 60 V, 65 A, 16 mΩ Features Description • RDS(on) = 13 mΩ (Typ.) @ VGS = 10 V, ID = 32.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge ( typical 33 nC) • Low Crss ( typical 35 pF) • Fast Switching • Improved dv/dt Capability D GD S G TO-220 S Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted. FDP65N06 Units VDSS Drain-Source Voltage Parameter 60 V ID Drain Current - Continuous (TC = 25°C) 65 A - Continuous (TC = 100°C) 41 A IDM Drain Current VGSS Gate-Source Voltage EAS IAR - Pulsed 260 A ± 20 V Single Pulsed Avalanche Energy (Note 2) 430 mJ Avalanche Current (Note 1) 65 A EAR Repetitive Avalanche Energy (Note 1) 13.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) (Note 1) - Derate above 25°C 135 W 1.08 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds 300 °C Thermal Characteristics Symbol Parameter FDP65N06 Units RθJC Thermal Resistance, Junction-to-Case, Max. 0.92 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W ©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. C0 1 www.fairchildsemi.com FDP65N06 — N-Channel UniFETTM MOSFET November 2013 Device Marking Device Package Reel Size Tape Width Quantity FDP65N06 FDP65N06 TO-220 Tube N/A 50 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted. Parameter Test Conditions Min Typ Max Units 60 - - V - V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C - 0.5 IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V - - 1 µA VDS = 48 V, TC = 125°C - - 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V - - 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V - - -100 nA 2.0 - 4.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 32.5 A - 0.013 0.016 Ω gFS Forward Transconductance VDS = 40 V, ID = 32.5 A - 39 - S VDS = 25 V, VGS = 0 V, f = 1.0 MHz - 1670 2170 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 464 600 pF - 35 52 pF - 24 58 ns - 94 200 ns - 98 210 ns - 52 114 ns - 33 43 nC - 10 - nC - 11 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time VDD = 30 V, ID = 65A, RG = 25 Ω (Note 4) tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 48 V, ID = 65A, VGS = 10 V (Note 4) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current - - 65 A ISM Maximum Pulsed Drain-Source Diode Forward Current - - 260 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 65 A - - 1.4 V trr Reverse Recovery Time - 62 - ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 65 A, dIF / dt = 100 A/µs - 132 - nC NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 47 µH, IAS = 65 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C. 3. ISD ≤ 65 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, Starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. C0 2 www.fairchildsemi.com FDP65N06 — N-Channel UniFETTM MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 500 300 o 150 C V GS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V B ottom : 5 .5 V ID, Drain Current [A] 100 ID, Drain Current [A] Top : 100 o 25 C 10 o 10 -5 5 C * 2 0.1 otes : 1. 250 µ s Pulse Test o 2. T C = 25 C 1 * N o te s : 1 . V DS = 4 0 V 2 . 2 5 0 µ s P u ls e T e s t 1 2 10 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.14 100 0.12 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 10 V G S , G a te -S o urc e V o lta ge [V ] V D S , D rain-S ource V oltage [V ] 0.10 VGS = 10V 0.08 0.06 0.04 VGS = 20V 0.02 o * Note : TJ = 25 C 0 5 10 15 10 0 150 C 0 25 C * Note : 1. VGS=0V 2. 250µs Pulse Test 1 0.2 20 ID, Drain Current [A] VGS, Gate-Source Voltage [V] Coss * Note : 1. VGS = 0 V 2. f = 1 MHz Ciss 2000 0 -1 10 0.8 1.0 1.2 1.4 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 0.6 Figure 6. Gate Charge Characteristics 4000 3000 0.4 VDS, Source-Drain Violtage [V] Figure 5. Capacitance Characteristics Capacitances [pF] 8 Crss 10 VDS = 12V 8 VDS = 48V VDS = 30V 6 4 2 * Note : ID = 65A 0 0 10 1 0 10 ©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. C0 10 20 30 40 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FDP65N06 — N-Channel UniFETTM MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 0.9 * Not s : 1. VGS = 0 V 2. ID = 250 µA 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 32.5 A 0.5 0.0 -100 200 -50 0 100 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature Figure 9. Maximum Safe Operating Area 3 80 10 10 µs 70 100 µs 2 60 ID, Drain Current [A] 10 ID, Drain Current [A] 50 o o 1ms 10ms 100ms DC 1 10 Operation in This Area is Limited by R DS(on) * Notes : o 1. TC = 25 C 0 10 50 40 30 20 o 2. TJ = 150 C 3. Single Pulse 10 -1 10 0 1 10 0 25 2 10 10 50 75 VDS, Drain-SourceVoltage[V] 100 125 150 o TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 0 ZθJC(t), Thermal Response [ oC/W] 10 D=0.5 0.2 -1 0.1 10 0.05 0.02 0.01 * Notes : 0 1. ZθJC(t) = 0.92 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) -2 10 single pulse -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] ©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. C0 4 www.fairchildsemi.com FDP65N06 — N-Channel UniFETTM MOSFET Typical Performance Characteristics (Continued) FDP65N06 — N-Channel UniFETTM MOSFET Figure 12. Gate Charge Test Circuit & Waveform 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD ID (t) tp ©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. C0 VDS (t) VDD DUT tp 5 Time www.fairchildsemi.com FDP65N06 — N-Channel UniFETTM MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. C0 6 www.fairchildsemi.com FDP65N06 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 ©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. C0 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. C0 8 www.fairchildsemi.com FDP65N06 — N-Channel UniFETTM MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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