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FDPC8014S
PowerTrench® Power Clip
25V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
This device includes two specialized N-Channel MOSFETs in a
Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A
dual package. The switch node has been internally connected to
Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
enable easy placement and routing of synchronous buck
Q2: N-Channel
SyncFETTM (Q2) have been designed to provide optimal power
converters. The control MOSFET (Q1) and synchronous
Max rDS(on) = 1.2 mΩ at VGS = 10 V, ID = 41 A
efficiency.
Max rDS(on) = 1.4 mΩ at VGS = 4.5 V, ID = 37 A
Applications
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
Computing
Communications
MOSFET integration enables optimum layout for
lower circuit inductance and reduced switch node
ringing
General Purpose Point of Load
RoHS Compliant
PAD10
V+(HSD)
PIN1
PIN1
HSG
SW
GR
PAD9
GND(LSS)
V+
V+
Top
LSG
LSG HSG
GR
SW
SW
SW
V+
SW
SW
V+
SW
Bottom
Power Clip 5X6
Pin
Name
Description
1
HSG
High Side Gate
3,4,10
Pin
V+(HSD)
Name
High Side Drain
Description
Pin
2
GR
Gate Return
5,6,7
SW
Switching Node, Low Side Drain 9
8
Name
LSG
Description
Low Side Gate
GND(LSS) Low Side Source
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
PD
TJ, TSTG
Q2
25
Units
V
V
±12
±12
-Continuous
TC = 25 °C
60
110
-Continuous
TA = 25 °C
20Note1a
41Note1b
75
160
-Pulsed
EAS
Q1
25Note5
TA = 25 °C (Note 4)
Single Pulse Avalanche Energy
(Note 3)
73
253
Power Dissipation for Single Operation
TC = 25 °C
21
42
Power Dissipation for Single Operation
TA = 25 °C
2.1Note1a
2.3 Note1b
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
6.0
3.0
RθJA
Thermal Resistance, Junction to Ambient
60Note1a
55Note1b
RθJA
Thermal Resistance, Junction to Ambient
130Note1c
120Note1d
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
1
°C/W
www.fairchildsemi.com
FDPC8014S PowerTrench® Power Clip
April 2014
Device Marking
05OD/16OD
Device
FDPC8014S
Package
Power Clip 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
25
25
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ID = 1 mA, VGS = 0 V
Q1
Q2
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
ID = 10 mA, referenced to 25 °C
Q1
Q2
IDSS
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V
Q1
Q2
1
500
μA
μA
IGSS
Gate to Source Leakage Current,
Forward
VGS = 12 V/-8 V, VDS= 0 V
VGS = 12 V/-8 V, VDS= 0 V
Q1
Q2
±100
±100
nA
nA
2.5
2.5
V
V
24
24
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = VDS, ID = 1 mA
Q1
Q2
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
ID = 10 mA, referenced to 25 °C
Q1
Q2
-4
-3
VGS = 10V, ID = 20 A
VGS = 4.5 V, ID = 18 A
VGS = 10 V, ID = 20 A,TJ =125 °C
Q1
2.8
3.4
3.9
3.8
4.7
5.3
VGS = 10V, ID = 41 A
VGS = 4.5 V, ID = 37 A
VGS = 10 V, ID = 41 A ,TJ =125 °C
Q2
0.9
1.0
1.1
1.2
1.4
1.5
VDS = 5 V, ID = 20 A
VDS = 5 V, ID = 41 A
Q1
Q2
182
315
Q1
Q2
1695
6580
2375
9870
pF
Q1
Q2
495
1720
710
2580
pF
Q1
Q2
54
204
100
370
pF
0.4
0.4
1.2
1.2
Ω
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
0.8
1.1
1.3
1.4
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Q1:
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q2:
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
0.1
0.1
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
©2013 Fairchild Semiconductor Corporation
FDPC8014S Rev.C7
Q1:
VDD = 13 V, ID = 20 A, RGEN = 6 Ω
Q2:
VDD = 13 V, ID = 41 A, RGEN = 6 Ω
VGS = 0 V to 10 V
Q1
V = 13 V, ID
VGS = 0 V to 4.5 V DD
= 20 A
Q2
VDD = 13 V, ID
= 41 A
2
Q1
Q2
8
16
16
28
ns
Q1
Q2
2
6
10
11
ns
Q1
Q2
24
47
38
75
ns
Q1
Q2
2
4
10
10
ns
Q1
Q2
25
93
35
130
nC
Q1
Q2
11
43
16
60
nC
Q1
Q2
3.4
13
nC
Q1
Q2
2.2
8.5
nC
www.fairchildsemi.com
FDPC8014S PowerTrench® Power Clip
Package Marking and Ordering Information
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Q1
Q2
0.8
0.8
1.2
1.2
V
Q1
Q2
60
110
A
Q1
Q2
75
160
A
Q1
Q2
25
36
40
58
ns
Q1
Q2
10
47
20
75
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
IS
Diode continuous forward current
VGS = 0 V, IS = 20 A
VGS = 0 V, IS = 41 A
(Note 2)
(Note 2)
TC = 25 °C
IS,Pulse
Diode pulse current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Q1
IF = 20 A, di/dt = 100 A/μs
Q2
IF = 41 A, di/dt = 300 A/μs
Notes:
1.RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b. 55 °C/W when mounted on
a 1 in2 pad of 2 oz copper
a. 60 °C/W when mounted on
a 1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
c. 130 °C/W when mounted on a
minimum pad of 2 oz copper
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Q1 :EAS of 73 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 24 A.
Q2: EAS of 253 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 13 A, VDD = 25 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 43 A.
4. Pulsed Id limited by junction temperature,td